BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs 1=B Q62702-F1571 Package 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 3 Collector current IC 35 Base current IB 10 Total power dissipation Ptot TS ≤ 107 °C Values Unit V mA mW 280 Junction temperature Tj Storage temperature Tstg 150 °C - 65 ... - 150 Thermal Resistance Junction - soldering point RthJS Semiconductor Group 1 ≤ 155 K/W Nov-28-1996 BF 799W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base breakdown voltage - 30 - - 3 - - ICBO VCB = 20 V, IE = 0 DC current gain - V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current 20 V(BR)CBO IC = 10 µA, IE = 0 Base-emitter breakdown voltage V nA - - 100 hFE - IC = 5 mA, VCE = 10 V 35 95 - IC = 20 mA, VCE = 10 V 40 100 250 Collector-emitter saturation voltage VCEsat IC = 20 mA, IB = 2 mA Base-emitter saturation voltage - 0.15 0.5 - - 0.95 VBEsat IC = 20 mA, IB = 2 mA Semiconductor Group V 2 Nov-28-1996 BF 799W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT MHz IC = 5 mA, VCE = 10 V, f = 100 MHz - 800 - IC = 20 mA, VCE = 8 V, f = 100 MHz - 1100 - Collector-base capacitance Ccb VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance 0.7 - - 0.28 - - 0.96 - Cob VCB = 10 V, IE = 0 mA, f = 1 MHz Noise figure - Cce VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Output capacitance pF F dB IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 50 Ω Output conductance - - g22e IC = 20 mA, VCE = 10 V, f = 35 MHz Semiconductor Group 3 µS - 3 60 - Nov-28-1996 BF 799W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW 260 Ptot 240 TS 220 200 180 160 140 TA 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-28-1996 BF 799W Transition frequency fT = f (IC) f = 100MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz VCE = Parameter Semiconductor Group 5 Nov-28-1996