INFINEON Q62702

BF 799W
NPN Silicon RF Transistor
• For linear broadband amplifier applications
up to 500MHz
• SAW filter driver in TV tuners
Type
Marking Ordering Code
Pin Configuration
BF 799W
LKs
1=B
Q62702-F1571
Package
2=E
3=C
SOT-323
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
20
Collector-emitter voltage
VCES
30
Collector-base voltage
VCBO
30
Emitter-base voltage
VEBO
3
Collector current
IC
35
Base current
IB
10
Total power dissipation
Ptot
TS ≤ 107 °C
Values
Unit
V
mA
mW
280
Junction temperature
Tj
Storage temperature
Tstg
150
°C
- 65 ... - 150
Thermal Resistance
Junction - soldering point
RthJS
Semiconductor Group
1
≤ 155
K/W
Nov-28-1996
BF 799W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-base breakdown voltage
-
30
-
-
3
-
-
ICBO
VCB = 20 V, IE = 0
DC current gain
-
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
20
V(BR)CBO
IC = 10 µA, IE = 0
Base-emitter breakdown voltage
V
nA
-
-
100
hFE
-
IC = 5 mA, VCE = 10 V
35
95
-
IC = 20 mA, VCE = 10 V
40
100
250
Collector-emitter saturation voltage
VCEsat
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage
-
0.15
0.5
-
-
0.95
VBEsat
IC = 20 mA, IB = 2 mA
Semiconductor Group
V
2
Nov-28-1996
BF 799W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
MHz
IC = 5 mA, VCE = 10 V, f = 100 MHz
-
800
-
IC = 20 mA, VCE = 8 V, f = 100 MHz
-
1100
-
Collector-base capacitance
Ccb
VCB = 10 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
0.7
-
-
0.28
-
-
0.96
-
Cob
VCB = 10 V, IE = 0 mA, f = 1 MHz
Noise figure
-
Cce
VCE = 10 V, VBE = vbe = 0 , f = 1 MHz
Output capacitance
pF
F
dB
IC = 5 mA, VCE = 10 V, f = 100 MHz
ZS = 50 Ω
Output conductance
-
-
g22e
IC = 20 mA, VCE = 10 V, f = 35 MHz
Semiconductor Group
3
µS
-
3
60
-
Nov-28-1996
BF 799W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
260
Ptot
240
TS
220
200
180
160
140
TA
120
100
80
60
40
20
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
10 3
K/W
RthJS
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
4
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Nov-28-1996
BF 799W
Transition frequency fT = f (IC)
f = 100MHz
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
VCE = Parameter
Semiconductor Group
5
Nov-28-1996