INFINEON BCP72M

BCP 72M
PNP Silicon AF Power Transistor
Preliminary data
4
• Drain switch for RF power amplifier stages
• For AF driver and output stages
5
• High collector current
• Low collector-emitter saturation voltage
3
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
BCP 72M
PAs
Q62702-C2517
Package
1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
5
DC collector current
IC
3
Peak collector current
I CM
6
Base current
IB
200
Peak base current
I BM
500
Total power dissipation, T S ≤ 94 °C
Ptot
1.7
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
V
A
mA
-65...+150
Thermal Resistance
Junction ambient 1)
RthJA
≤ 88
Junction - soldering point
RthJS
≤ 33
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
11
Jun-05-1998
1998-11-01
BCP 72M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)CEO
10
-
-
Collector-base breakdown voltage
V(BR)CBO
10
-
-
I C = 100 µA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
I E = 10 µA, I C = 0
Collector cutoff current
I CBO
-
-
100
nA
I CBO
-
-
20
µA
I EBO
-
-
100
nA
DC Characteristics
Collector-emitter breakdown voltage
V
I C = 10 mA, I B = 0
VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , T A = 150 °C
Emitter cutoff current
VEB = 4 V, I C = 0
hFE
DC current gain 1)
-
I C = 10 mA, VCE = 5 V
25
-
-
I C = 500 mA, V CE = 1 V
85
-
475
I C = 2 A, VCE = 2 V
50
-
-
VCEsat
-
0.15
-
VBEsat
-
-
1.2
fT
-
100
-
MHz
Ccb
-
100
-
pF
Collector-emitter saturation voltage1)
V
I C = 2 A, I B = 0.2 A
Base-emitter saturation voltage 1)
I C = 2 A, I B = 0.2 A
AC Characteristics
Transition frequency
I C = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
22
Jun-05-1998
1998-11-01
BCP 72M
Total power dissipation P tot = f (T A*;T S)
* Package mounted on epoxy
2000
mW
1600
TS
P tot
1400
1200
1000
TA
800
600
400
200
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load
Permissible Pulse Load R thJS = f (tp)
Ptotmax / PtotDC = f (tp)
10 2
10 3
Ptotmax / PtotDC
RthJS
K/W
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
-
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
33
Jun-05-1998
1998-11-01
BCP 72M
DC current gain h FE = f (I C)
Collector-emitter saturation voltage
VCE = 2V
IC = f (VCEsat ), hFE = 10
10 4
10 3
mA
-
100°C
3
IC 10
25°C
hFE
10 2
-50°C
100°C
25°C
-50°C
10 2
10 1
10 1
10 0 0
10
10
1
10
2
10
3
10 0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V
mA
VCEsat
IC
Base-emitter saturation voltage
Collector current I C = f (VBE)
I C = f (VBEsat), hFE = 10
VCE = 2V
10 4
10 4
mA
IC
mA
10 3
3
I C 10
-50°C
25°C
100°C
10 2
10 2
10 1
10 1
10 0
0.0
0.50
0.2
0.4
0.6
0.8
1.0
V
10 0
0.0
1.3
VBEsat
Semiconductor Group
Semiconductor Group
-50°C
25°C
100°C
0.2
0.4
0.6
0.8
1.0
V
1.3
VBE
44
Jun-05-1998
1998-11-01