BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP952...BDP956 (PNP) Type Marking Ordering Code Pin Configuration Package BDP 951 BDP 951 Q62702-D1339 1=B 2=C 3=E 4=C SOT-223 BDP 953 BDP 953 Q62702-D1341 1=B 2=C 3=E 4=C SOT-223 BDP 955 PDP 955 Q62702-D1343 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Values V BDP 951 80 BDP 953 100 BDP 955 120 Collector-base voltage Unit VCBO BDP 951 100 BDP 953 120 BDP 955 140 Emitter-base voltage VEBO 5 DC collector current IC 3 Peak collector current ICM 5 Base current IB 200 Peak base current IBM 500 Total power dissipation, TS = 99°C Ptot 3 W Junction temperature Tj 150 °C Storage temperature Tstg A mA - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 42 RthJS ≤ 17 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-28-1996 BDP 951 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 mA, BDP 951 80 - - IC = 10 mA, IB = 0 mA, BDP 953 100 - - IC = 10 mA, IB = 0 mA, BDP 955 120 - - IC 100 µA, IB = 0 , BDP 951 100 - - IC = 100 µA, IB = 0 , BDP 953 120 - - IC = 100 µA, IB = 0 , BDP 955 140 - - 5 - - VCB = 100 V, IE = 0 , TA = 25 °C - - 100 nA VCB = 100 V, IE = 0 , TA = 150 °C - - 20 µA Collector-base breakdown voltage Base-emitter breakdown voltage V(BR)CBO V(BR)EBO IE = 10 µA, IC = 0 Collector cutoff current Emitter cutoff current ICBO IEBO VEB = 4 V, IC = 0 DC current gain nA - - 100 hFE - IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, VCE = 1 V 40 - 475 IC = 2 A, VCE = 2 V 15 - - Collector-emitter saturation voltage 1) VCEsat IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) V - - 0.8 - - 1.5 VBEsat IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency fT IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance MHz - 100 - Ccb VCB = 10 V, f = 1 MHz pF - 25 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-28-1996 BDP 951 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f(tp) 10 3 3.2 K/W TS W TA Ptot RthJS 10 2 2.4 2.0 10 1 1.6 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 1.2 0.8 10 -1 0.4 0.0 0 20 40 60 80 100 10 -2 -6 10 120 °C 150 TA ,TS 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Permissible Pulse Load Ptotmax / PtotDC = f(tp) DC current gain hFE = f (IC) VCE = 2V 10 3 10 3 - - Ptotmax/P totDC hFE D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 2 10 1 10 0 -6 10 100°C 25°C -50°C 10 1 10 -5 Semiconductor Group 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 3 10 0 0 10 10 1 10 2 10 3 mA IC Nov-28-1996 BDP 951 Collector cutoff current ICBO = f (TA) VCB = 45V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 4 10 5 nA mA 10 4 ICBO IC 10 3 100°C 25°C -50°C 10 3 max 10 2 10 2 typ 10 1 10 1 10 0 10 -1 0 20 40 60 80 100 0.2 0.4 V 10 4 10 4 mA mA IC 10 3 10 3 -50°C 25°C 100°C 10 2 10 2 10 1 10 1 10 0 0.0 0.2 0.4 Semiconductor Group 0.6 0.8 1.0 0.8 V CEsat Collector current IC = f (VBE) VCE = 2V Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 IC 10 0 0.0 120 °C 150 TA V 1.3 V BEsat 4 10 0 0.0 -50°C 25°C 100°C 0.2 0.4 0.6 0.8 1.0 V 1.3 V BE Nov-28-1996