DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 TC = 150°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 35 A; L = 100 µH; TVJ = 25°C; non repetitive IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive (dv/dt)cr 70 35 70 A A A 600 A 60 mJ 2 A 5000 TVJ TVJM Tstg Ptot TC = 25°C FC mounting force with clip VISOL 50/60 Hz, RMS, t = 1 s, leads-to-tab Weight typical Symbol Conditions IR TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM VF IF = 35 A; IF = 35 A; IF = 70 A; V/µs -55...+175 175 -55...+150 °C °C °C 190 W 20...120 N 3000 V~ 6 Features • • • • • International standard package Very low VF Extremely low switching losses Low IRM-values Isolated and UL registered E153432 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses g Dimensions see Outlines.pdf Characteristic Values typ. max. 4 10 TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 mA mA 0.68 0.79 0.86 V V V 0.8 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 510 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSSS 35-008AR 10000 100 A mA 100 pF 10 TVJ=175°C IR IF CT 150°C 1 125°C TVJ= 25°C 1000 0.1 100°C 10 75°C 0.01 TVJ = 150°C 50°C 125°C 0.001 25°C 25°C 1 0.0 100 0.0001 0.2 0.4 0.6 0.8 1.0 V 1.2 VF 0 Fig. 1 Max. forward voltage drop characteristics 10 20 30 40 50 60 70 VR 0 V Fig. 2 Typ. reverse current IR versus reverse voltage Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 10000 60 80 10 20 30 40 50 60 70 V VR W A 50 d = 0.5 60 A IFSM P(AV) 40 DC IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 30 40 20 20 10 1000 0 0 0 50 100 0 150 C 200 10 20 30 TC Fig. 4 Avg. forward current IF(AV) vs. case temperature TC 40 50 IF(AV) A 60 70 100 10 100 1000 s 10000 tP Fig. 5 Forward power loss characteristics 1 K/W D = 0.5 0.33 0.25 ZthJC 0.17 0.1 0.08 Single Pulse 0.01 1e-5 1e-4 DSSS 35-008AR 1e-3 1e-2 1e-1 1e+0 t Note: All curves are per diode s 1e+1 IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 510 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2