KSC5321 KSC5321 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A 500 V 7 V PC Power Dissipation(TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2000 Fairchild Semiconductor International Characteristics Junction to Case Junction to Ambient Rating 1.25 Unit °C/W 62.5 Rev. A, February 2000 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 Typ. - Max. - Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V BVEBO Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V ICBO Collector Cut-off Current VCB = 800V, IE = 0 - - 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A 15 8 - 40 - VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V V fT Current Gain bandwidth Product VCE= 10V, IC = 0.6A - 14 - MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz - 65 100 pF Cib Input Capacitance VEB = 7V, IC = 0, f = 1MHz - 1400 2000 pF tON Turn ON Time - 0.5 µs Storage Time - 6.5 µs tF Fall Time VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A RL = 125Ω - tSTG - - 0.3 µs tON Turn ON Time - - 0.5 µs tSTG Storage Time - - 3.0 µs tF Fall Time - - 0.3 µs ©2000 Fairchild Semiconductor International VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 62.5Ω Rev. A, February 2000 KSC5321 Electrical Characteristics TC=25°C unless otherwise noted KSC5321 Typical Characteristics IC[A], COLLECTOR CURRENT IB = 0m 70 100 A 00m A IB = 6 0m A I B = 50 0m A I B = 40 0m A 3 IB = 0 4 3 IB = 200m VCE = 5V A I B = 100m 2 hFE, DC CURRENT GAIN 5 A 1 1 0.01 0 0 2 4 6 8 10 10 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 Figure 2. DC current Gain 10 1000 IC = 5 I B 1 f = 1MHz IE = 0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic V BE(sat) 0.1 V CE(sat) 0.01 0.01 100 10 1 0.1 1 10 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 tSTG 1 µs 1 m 10 s tF 0.1 DC s 1m tON 50µ s Pulse 10 0 10 IC[A], COLLECTOR CURRENT 10 tON, tSTG, tF [µs], TIME 0.1 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2000 Fairchild Semiconductor International 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSC5321 Typical Characteristics (Continued) 100 120 IB2 = -1A L = 200µ H PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 1 0.1 0.01 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC5321 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E