KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product • Low base drive requirement B TO-126 1 1. Emitter E 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO VEBO Collector-Emitter Voltage 400 V Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 5 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Power Dissipation(TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2002 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 5.0 Unit °C/W 62.5 Rev. B1, December 2002 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=1mA, IE=0 Min. 800 Typ. - Max. - Units V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V BVEBO Emitter Cut-off Current IE=1mA, IC=0 12 - - V ICBO Collector Cut-off Current VCB=500V, IE=0 - - 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE=1V, IC=0.4A VCE=1V,IC=1A 20 10 - - VCE(sat) Collector-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A - - 0.4 0.5 V V VBE(sat) Collector-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A - - 0.9 1.0 V V Cob Output Capacitance VCB = 10V, f=1MHz - - 75 pF tON Turn On Time - - 150 ns tSTG Storage Time VCC=300V, IC =1A IB1 = 0.2A, IB2=-0.5A RL = 300Ω - - 2 µs - - 0.2 µs VCC=15V, VZ=300V IC = 0.8A, IB1 = 0.16A IB2 = -0.16A, LC=200µH - - 2.35 µs - - 150 ns Diode Forward Voltage IF = 0.4A IF = 1A - - 1.2 1.5 V V * Reverse Recovery Time (di/dt = 10A/µs) IF = 0.2A IF = 0.4A IF = 1A - 800 1 1.4 - ns µs µs tF Fall Time tSTG Storage Time tF Fall Time VF trr *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302DM Electrical Characteristics TC=25°C unless otherwise noted KSC5302DM Typical Characteristics 3.0 100 VCE = 5V o Ta = 125 C o IB = 200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA 2.0 1.5 25 C o -25 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.5 IB = 40mA 1.0 10 0.5 IB = 0 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 100 VCE = 1V o hFE, DC CURRENT GAIN o 25 C o -20 C 10 1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Ta = 125 C 1 10 IC = 10 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 IC = 5IB VBE(sat), SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC = 5IB o 25 C 1 o Ta = 125 C o -20 C 0.1 0.01 0.01 10 IC[A], COLLECTOR CURRENT 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1 0.1 0.01 o -20 C o 25 C o Ta = 125 C 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Base-Emitter Saturation Voltage Rev. B1, December 2002 KSC5302DM Typical Characteristics (Continued) 10 1000 f = 1MHz Cob[pF], CAPACITANCE tSTG, tF [µs], TIME VCC = 300V IC = 5IB1 = -2.5IB2 tSTG 1 tF 0.1 0.01 0.1 100 10 1 1 10 1 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 7. Switching Time Figure 8. Collector Output Capacitance 1.6 10 Vf [V], FORWARD DIODE VOLTAGE di/dt = 10A/µs trr[µs], REVERSE RECOVERY TIME 100 1.4 1.2 1.0 1 0.8 0.2 0.4 0.6 0.8 If[A], FORWARD CURRENT Figure 9. Reverse Recovery Time ©2002 Fairchild Semiconductor Corporation 1.0 0.1 0.01 0.1 1 10 IF[A], FORWARD DIODE CURRENT Figure 10. Forward Diode Voltage Rev. B1, December 2002 KSC5302DM Package Dimensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1