ONSEMI 2N6497

ON Semiconductor High Voltage NPN Silicon
Power Transistors
2N6497
. . . designed for high voltage inverters, switching regulators and
line–operated amplifier applications. Especially well suited for
switching power supply applications.
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLT
80 WATTS
• High Collector–Emitter Sustaining Voltage –
•
•
VCEO(sus) = 250 Vdc (Min)
Excellent DC Current Gain
hFE = 10–75 @ IC = 2.5 Adc
Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc –
VCE(sat) = 1.0 Vdc (Max)
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4
MAXIMUM RATINGS (1)
Rating
Symbol
Value
Unit
VCEO
250
Vdc
Collector–Base Voltage
VCB
350
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
3
Collector Current – Continuous
– Peak
IC
5.0
10
Adc
CASE 221A–09
TO–220AB
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
80
0.64
Watts
W/C
TJ,Tstg
–65 to +150
C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.56
C/W
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
THERMAL CHARACTERISTICS
(1) Indicates JEDEC Registered Data.
 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 11
1
Publication Order Number:
2N6497/D
2N6497
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
250
–
–
–
–
–
–
1.0
10
–
–
1.0
10
3.0
–
–
75
–
–
–
–
–
1.0
5.0
–
–
–
–
1.5
2.5
fT
5.0
–
–
MHz
Cob
–
–
150
pF
Rise Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
tr
–
0.4
1.0
µs
Storage Time
(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
ts
–
1.4
2.5
µs
tf
–
0.45
1.0
µs
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 25 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 350 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100C)
ICEX
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.5 Adc, VCE = 10 Vdc)
(IC = 5.0 Adc, VCE = 10 Vdc)
hFE
–
Collector–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
VBE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Fall Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
VCC
+ 125 V
25 µs
1.0
0.7
0.5
RC 50
+ 11 V
0.3
RB 20
0
- 9.0 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
D1
t, TIME (s)
µ
SCOPE
- 5.0 V
0.2
tr
0.1
0.07
0.05
0.03
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
0.02
0.01
0.05 0.07 0.1
Figure 1. Switching Time Test Circuit
td @ VBE(off) = 5.0 V
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Turn–On Time
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2
5.0
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
2N6497
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.1
0.02
t1
0.03
SINGLE PULSE
0.01
0.02
0.01
0.01
P(pk)
0.05
SINGLE
PULSE
t2
RθJC(max) = 1.56°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 3. Thermal Response
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltage shown on
Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
IC, COLLECTOR CURRENT (AMP)
10
5.0
dc
2.0
5.0 ms
1.0 ms
100 µs
1.0
TC = 25°C
0.5
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
0.1
0.05
0.02
CURVES APPLY BELOW RATED VCEO
5.0 7.0
50 70 100
200 300
10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 4. Active–Region Safe Operating Area
100
ts
t, TIME (s)
µ
3.0
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
POWER DERATING FACTOR (%)
10
7.0
5.0
2.0
1.0
0.7
0.5
0.3
tf
0.2
0.1
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
3.0
60
THERMAL DERATING
40
20
0
5.0
SECOND BREAKDOWN DERATING
80
0
Figure 5. Turn–Off Time
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 6. Power Derating
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3
140
160
2N6497
hFE, DC CURRENT GAIN
70
TJ = 150°C
50
VCE = 10 V
25°C
30
20
-55°C
10
7.0
5.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
3.0
TJ = 25°C
3.2
2.4
1.6
0.8
IC = 1.0 A
0
0.01 0.02
5.0
Figure 7. DC Current Gain
θV, TEMPERATURE COEFFICIENTS (mV/°C)
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0
VBE(sat) @ IC/IB = 5.0
0.8
VBE @ VCE = 10 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 5.0
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
IC/IB = 2.5
1.0
2.0 3.0
5.0
5.0
10
+4.0
+3.0
*APPLIES FOR IC/IB hFE@VCE 10V
3
+2.0
+1.0
*θVC for VCE(sat)
25°C to 150°C
0
-55°C to 25°C
-1.0
-2.0
25°C to 150°C
θVB for VBE
-55 to 25°C
-3.0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
Figure 10. Temperature Coefficients
5.0
1000
700
500
VCE = 200 V
101
100°C
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
µ
2.0
Figure 9. “On” Voltages
TJ = 150°C
100
10-2
-0.1
0.1 0.2
1.0
0.5
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMP)
102
10-1
5.0 A
IC, COLLECTOR CURRENT (AMP)
104
103
0.05
3.0 A
Figure 8. Collector Saturation Region
1.4
1.2
2.0 A
Cib
300
200
TJ = 25°C
100
70
50
Cob
30
25°C
REVERSE
-0.2
20
FORWARD
0
+0.2
+0.4
10
0.4 0.6 1.0
+0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cutoff Region
2.0 4.0 6.0 10
20
40 60 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Capacitance
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200 400
2N6497
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
2N6497
Notes
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2N6497
Notes
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2N6497
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
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2N6497/D