ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS NPN SILICON 250 VOLT 80 WATTS • High Collector–Emitter Sustaining Voltage – • • VCEO(sus) = 250 Vdc (Min) Excellent DC Current Gain hFE = 10–75 @ IC = 2.5 Adc Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc – VCE(sat) = 1.0 Vdc (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ 4 MAXIMUM RATINGS (1) Rating Symbol Value Unit VCEO 250 Vdc Collector–Base Voltage VCB 350 Vdc Emitter–Base Voltage VEB 6.0 Vdc 3 Collector Current – Continuous – Peak IC 5.0 10 Adc CASE 221A–09 TO–220AB Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 80 0.64 Watts W/C TJ,Tstg –65 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.56 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR THERMAL CHARACTERISTICS (1) Indicates JEDEC Registered Data. Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 11 1 Publication Order Number: 2N6497/D 2N6497 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 250 – – – – – – 1.0 10 – – 1.0 10 3.0 – – 75 – – – – – 1.0 5.0 – – – – 1.5 2.5 fT 5.0 – – MHz Cob – – 150 pF Rise Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc) tr – 0.4 1.0 µs Storage Time (VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc) ts – 1.4 2.5 µs tf – 0.45 1.0 µs OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 25 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 350 Vdc, VBE(off) = 1.5 Vdc) (VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100C) ICEX Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 2.5 Adc, VCE = 10 Vdc) (IC = 5.0 Adc, VCE = 10 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) VCE(sat) Base–Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) SWITCHING CHARACTERISTICS Fall Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. VCC + 125 V 25 µs 1.0 0.7 0.5 RC 50 + 11 V 0.3 RB 20 0 - 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% D1 t, TIME (s) µ SCOPE - 5.0 V 0.2 tr 0.1 0.07 0.05 0.03 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA VCC = 125 V IC/IB = 5.0 TJ = 25°C 0.02 0.01 0.05 0.07 0.1 Figure 1. Switching Time Test Circuit td @ VBE(off) = 5.0 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Turn–On Time http://onsemi.com 2 5.0 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6497 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.1 0.02 t1 0.03 SINGLE PULSE 0.01 0.02 0.01 0.01 P(pk) 0.05 SINGLE PULSE t2 RθJC(max) = 1.56°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. IC, COLLECTOR CURRENT (AMP) 10 5.0 dc 2.0 5.0 ms 1.0 ms 100 µs 1.0 TC = 25°C 0.5 BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.2 0.1 0.05 0.02 CURVES APPLY BELOW RATED VCEO 5.0 7.0 50 70 100 200 300 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 4. Active–Region Safe Operating Area 100 ts t, TIME (s) µ 3.0 VCC = 125 V IC/IB = 5.0 TJ = 25°C POWER DERATING FACTOR (%) 10 7.0 5.0 2.0 1.0 0.7 0.5 0.3 tf 0.2 0.1 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 60 THERMAL DERATING 40 20 0 5.0 SECOND BREAKDOWN DERATING 80 0 Figure 5. Turn–Off Time 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 6. Power Derating http://onsemi.com 3 140 160 2N6497 hFE, DC CURRENT GAIN 70 TJ = 150°C 50 VCE = 10 V 25°C 30 20 -55°C 10 7.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 3.0 TJ = 25°C 3.2 2.4 1.6 0.8 IC = 1.0 A 0 0.01 0.02 5.0 Figure 7. DC Current Gain θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) TJ = 25°C 1.0 VBE(sat) @ IC/IB = 5.0 0.8 VBE @ VCE = 10 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 5.0 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC/IB = 2.5 1.0 2.0 3.0 5.0 5.0 10 +4.0 +3.0 *APPLIES FOR IC/IB hFE@VCE 10V 3 +2.0 +1.0 *θVC for VCE(sat) 25°C to 150°C 0 -55°C to 25°C -1.0 -2.0 25°C to 150°C θVB for VBE -55 to 25°C -3.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Figure 10. Temperature Coefficients 5.0 1000 700 500 VCE = 200 V 101 100°C C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) µ 2.0 Figure 9. “On” Voltages TJ = 150°C 100 10-2 -0.1 0.1 0.2 1.0 0.5 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMP) 102 10-1 5.0 A IC, COLLECTOR CURRENT (AMP) 104 103 0.05 3.0 A Figure 8. Collector Saturation Region 1.4 1.2 2.0 A Cib 300 200 TJ = 25°C 100 70 50 Cob 30 25°C REVERSE -0.2 20 FORWARD 0 +0.2 +0.4 10 0.4 0.6 1.0 +0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cutoff Region 2.0 4.0 6.0 10 20 40 60 100 VR, REVERSE VOLTAGE (VOLTS) Figure 12. Capacitance http://onsemi.com 4 200 400 2N6497 PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 2N6497 Notes http://onsemi.com 6 2N6497 Notes http://onsemi.com 7 2N6497 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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