ONSEMI 2N6292

ON Semiconductor PNP
Complementary Silicon Plastic
Power Transistors
2N6107
. . . designed for use in general–purpose amplifier and switching
applications.
2N6111
2N6109 *
NPN
• DC Current Gain Specified to 7.0 Amperes
•
•
2N6288
hFE = 30–150 @ IC
= 3.0 Adc — 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc — All Devices
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288
= 50 Vdc (Min) — 2N6109
= 70 Vdc (Min) — 2N6107, 2N6292
High Current Gain — Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11
TO–220AB Compact Package
2N6292*
*ON Semiconductor Preferred Device
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•
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
30–50–70 VOLTS
40 WATTS
*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25C
Derate above 25C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
2N6111
2N6288
2N6109
2N6107
2N6292
Unit
30
50
70
Vdc
40
60
80
Vdc
VEB
IC
5.0
Vdc
7.0
10
Adc
IB
PD
3.0
Adc
40
0.32
Watts
W/C
–65 to +150
C
TJ, Tstg
4
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
Symbol
Max
Unit
RθJC
3.125
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 5
1
Publication Order Number:
2N6107/D
2N6107 2N6109 2N6111 2N6288 2N6292
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
2N6107 2N6109 2N6111 2N6288 2N6292
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
50
70
—
—
—
—
—
—
1.0
1.0
1.0
—
—
—
—
—
—
100
100
100
2.0
2.0
2.0
—
1.0
30
30
30
2.3
150
150
150
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
2N6111, 2N6288
2N6109
2N6107, 2N6292
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
2N6111, 2N6288
2N6109
2N6107, 2N6292
2N6111, 2N6288
2N6109
2N6107, 2N6292
Vdc
ICEO
mAdc
µAdc
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
(IC = 2.5 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 7.0 Adc, VCE = 4.0 Vdc)
hFE
2N6107, 2N6292
2N6109
2N6111, 2N6288
All Devices
—
Collector–Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
VCE(sat)
—
3.5
Vdc
Base–Emitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
3.0
Vdc
4.0
10
—
—
Cob
—
250
pF
hfe
20
—
—
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
2N6288, 92
2N6107, 09, 11
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest.
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3
MHz
2N6107 2N6109 2N6111 2N6288 2N6292
VCC
+30 V
25 µs
2.0
1.0
RC
+11 V
SCOPE
0
t, TIME (s)
µ
RB
D1
51
-9.0 V
-4 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.7
0.5
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.3
0.2
tr
0.1
0.07
0.05
td @ VBE(off) ≈ 5.0 V
0.03
0.02
0.07 0.1
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.2 0.3
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
3.0
5.0 7.0
Figure 3. Turn–On Time
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
ZθJC(t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
1.0
0.5
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
15
10
0.5 ms
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.15
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 ms
dc
0.1
ms
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
2.0 3.0
20 30
50
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 ms
70 100
Figure 5. Active–Region Safe Operating Area
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4
2N6107 2N6109 2N6111 2N6288 2N6292
5.0
300
t, TIME (s)
µ
2.0
ts
1.0
0.7
0.5
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
200
C, CAPACITANCE (pF)
3.0
tr
0.3
0.2
0.1
0.07
0.05
0.07 0.1
TJ = 25°C
Cib
100
70
Cob
50
0.2
1.0
0.3
0.5
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
30
0.5
5.0 7.0
Figure 6. Turn–Off Time
1.0
10
20
2.0 3.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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5
30
50
2N6107 2N6109 2N6111 2N6288 2N6292
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
2N6107 2N6109 2N6111 2N6288 2N6292
Notes
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7
2N6107 2N6109 2N6111 2N6288 2N6292
ON Semiconductor and
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2N6107/D