ONSEMI 2N6052

ON Semiconductort
PNP
2N6052*
Darlington Complementary
Silicon Power Transistors
NPN
. . . designed for general−purpose amplifier and low frequency
switching applications.
2N6058
2N6059*
• High DC Current Gain —
•
•
w
hFE = 3500 (Typ) @ IC = 5.0 Adc
Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
*ON Semiconductor Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 −100 VOLTS
150 WATTS
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
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MAXIMUM RATINGS (1)
Symbol
2N6058
2N6052
2N6059
Unit
VCEO
80
100
Vdc
Collector−Base Voltage
VCB
80
100
Vdc
Emitter−Base voltage
VEB
5.0
Vdc
IC
12
20
Adc
Rating
Collector−Emitter Voltage
Collector Current — Continuous
Peak
Base Current
IB
0.2
Adc
Total Device Dissipation
@TC = 25_C
Derate above 25_C
PD
150
Watts
0.857
W/_C
TJ, Tstg
– 65 to + 200_C
_C
Operating and Storage Junction
Temperature Range
CASE 1−07
TO−204AA
(TO−3)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Rating
Unit
RθJC
1.17
_C/W
PD, POWER DISSIPATION (WATTS)
(1) Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
2N6052/D
2N6052
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
100
—
—
—
—
1.0
1.0
—
0.5
5.0
—
2.0
750
100
18,000
—
—
—
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (2)
(IC = 100 mAdc, IB = 0)
2N6058
2N6052, 2N6059
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
2N6058
2N6052, 2N6059
VCEO(sus)
Vdc
ICEO
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
mAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
hFE
—
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 24 mAdc)
(IC = 12 Adc, IB = 120 mAdc)
VCE(sat)
Vdc
Base−Emitter Saturation Voltage
(IC = 12 Adc, IB = 120 mAdc)
VBE(sat)
—
4.0
Vdc
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.8
Vdc
|hfe|
4.0
—
MHz
Cob
—
—
500
300
pF
hfe
300
—
—
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small−Signal Short Circuit Forward
Current Transfer Ratio
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6052
2N6058/2N6059
Small−Signal Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
(2) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2.0%.
10
VCC
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
−30 V
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
RC
SCOPE
MSD6100 USED BELOW IB ≈ 100 mA
ts
TUT
V2
approx
+8.0 V
51
V1
approx
−8.0 V
D1
≈ 5.0 k
t, TIME (s)
μ
RB
0
≈ 50
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
2.0
tf
1.0
tr
0.5
+4.0 V
25 μs
2N6052
2N6059
5.0
td @ VBE(off) = 0
for td and tr, D1 is disconnected
and V2 = 0
0.2
0.1
0.2
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
0.5
1.0
3.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
http://onsemi.com
2
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
10
20
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N6052
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
RθJC(t) = r(t) RθJC
RθJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.03
0.01
0.02
SINGLE
PULSE
0.01
0.01
0.02
0.03 0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
ACTIVE−REGION SAFE OPERATING AREA
50
50
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
0.1 ms
10
5.0
0.5 ms
1.0 ms
2.0
1.0
0.5
0.2
0.1
0.05
10
5.0 ms
TJ = 200°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
d
c
50
70
20
30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
0.5 ms
5.0
1.0 ms
2.0
5.0 ms
1.0
TJ = 200°C
0.5
SECOND BREAKDOWN LIMITED
0.2
BONDING WIRE LIMITED
0.1
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
0.05
100
0.1 ms
20
10
20
30
d
c
50
70
100
VCE, COLLECTOR−EMITTER VOLTAGE
(VOLTS)
Figure 5. 2N6058
Figure 6. 2N6052, 2N6059
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5, 6, and 7 is based on TJ(pk) = 200_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C; TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
http://onsemi.com
3
500
3000
2000
TC = 25°C
VCE = 3.0 V
IC = 5.0 A
1000
TJ = 25°C
300
C, CAPACITANCE (pF)
hfe, SMALL−SIGNAL CURRENT GAIN
2N6052
500
200
100
2N6052
2N6058/2N6059
Cib
200
Cob
100
2N6052
2N6058/2N6059
70
50
30
1.0
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
50
0.1
500 1000
0.2
0.5 1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
Figure 7. Small−Signal Current Gain
http://onsemi.com
4
50
100
2N6052
PNP
2N6052
NPN
2N6058, 2N6059
20,000
40,000
VCE = 3.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 150°C
10,000
5000
3000
25°C
2000
1000
VCE = 3.0 V
TJ = 150°C
20,000
10,000
−55 °C
6,000
4,000
25°C
2,000
1,000
500
300
200
0.2 0.3
0.5
1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
−55 °C
600
400
0.2 0.3
20
0.5
1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
20
3.0
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
TJ = 25°C
2.6
IC = 3.0 A
6.0 A
9.0 A
12 A
2.2
1.8
1.4
1.0
0.5
1.0
20 30
2.0 3.0
5.0
10
IB, BASE CURRENT (mA)
50
3.0
2.6
TJ = 25°C
IC = 3.0 A
6.0 A
9.0 A
12 A
10
20 30
2.2
1.8
1.4
1.0
0.5
1.0
2.0
3.0
5.0
50
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
2.0
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
1.0
1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.5
0.2 0.3
20
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
http://onsemi.com
5
10
20
2N6052
PACKAGE DIMENSIONS
CASE 1−07
TO−204AA (TO−3)
ISSUE Z
A
N
C
E
D
−T−
U
SEATING
PLANE
K
2 PL
0.13 (0.005)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
T Q
M
M
Y
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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6
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
2N6052
Notes
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