ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • • w hFE = 3500 (Typ) @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 100 Vdc (Min) — 2N6052, 2N6059 Monolithic Construction with Built−In Base−Emitter Shunt Resistors *ON Semiconductor Preferred Device DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 −100 VOLTS 150 WATTS These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Symbol 2N6058 2N6052 2N6059 Unit VCEO 80 100 Vdc Collector−Base Voltage VCB 80 100 Vdc Emitter−Base voltage VEB 5.0 Vdc IC 12 20 Adc Rating Collector−Emitter Voltage Collector Current — Continuous Peak Base Current IB 0.2 Adc Total Device Dissipation @TC = 25_C Derate above 25_C PD 150 Watts 0.857 W/_C TJ, Tstg – 65 to + 200_C _C Operating and Storage Junction Temperature Range CASE 1−07 TO−204AA (TO−3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Rating Unit RθJC 1.17 _C/W PD, POWER DISSIPATION (WATTS) (1) Indicates JEDEC Registered Data. 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: 2N6052/D 2N6052 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 80 100 — — — — 1.0 1.0 — 0.5 5.0 — 2.0 750 100 18,000 — — — 2.0 3.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (2) (IC = 100 mAdc, IB = 0) 2N6058 2N6052, 2N6059 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) 2N6058 2N6052, 2N6059 VCEO(sus) Vdc ICEO Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 6.0 Adc, VCE = 3.0 Vdc) (IC = 12 Adc, VCE = 3.0 Vdc) hFE — Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 24 mAdc) (IC = 12 Adc, IB = 120 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc) VBE(sat) — 4.0 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc) VBE(on) — 2.8 Vdc |hfe| 4.0 — MHz Cob — — 500 300 pF hfe 300 — — DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small−Signal Short Circuit Forward Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6052 2N6058/2N6059 Small−Signal Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (2) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2.0%. 10 VCC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS −30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA RC SCOPE MSD6100 USED BELOW IB ≈ 100 mA ts TUT V2 approx +8.0 V 51 V1 approx −8.0 V D1 ≈ 5.0 k t, TIME (s) μ RB 0 ≈ 50 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 2.0 tf 1.0 tr 0.5 +4.0 V 25 μs 2N6052 2N6059 5.0 td @ VBE(off) = 0 for td and tr, D1 is disconnected and V2 = 0 0.2 0.1 0.2 For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times http://onsemi.com 2 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 10 20 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6052 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.17°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.01 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response ACTIVE−REGION SAFE OPERATING AREA 50 50 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 0.1 ms 10 5.0 0.5 ms 1.0 ms 2.0 1.0 0.5 0.2 0.1 0.05 10 5.0 ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) d c 50 70 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 0.5 ms 5.0 1.0 ms 2.0 5.0 ms 1.0 TJ = 200°C 0.5 SECOND BREAKDOWN LIMITED 0.2 BONDING WIRE LIMITED 0.1 THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) 0.05 100 0.1 ms 20 10 20 30 d c 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. 2N6058 Figure 6. 2N6052, 2N6059 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5, 6, and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3 500 3000 2000 TC = 25°C VCE = 3.0 V IC = 5.0 A 1000 TJ = 25°C 300 C, CAPACITANCE (pF) hfe, SMALL−SIGNAL CURRENT GAIN 2N6052 500 200 100 2N6052 2N6058/2N6059 Cib 200 Cob 100 2N6052 2N6058/2N6059 70 50 30 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 50 0.1 500 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Small−Signal Current Gain http://onsemi.com 4 50 100 2N6052 PNP 2N6052 NPN 2N6058, 2N6059 20,000 40,000 VCE = 3.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 150°C 10,000 5000 3000 25°C 2000 1000 VCE = 3.0 V TJ = 150°C 20,000 10,000 −55 °C 6,000 4,000 25°C 2,000 1,000 500 300 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 −55 °C 600 400 0.2 0.3 20 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 3.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain TJ = 25°C 2.6 IC = 3.0 A 6.0 A 9.0 A 12 A 2.2 1.8 1.4 1.0 0.5 1.0 20 30 2.0 3.0 5.0 10 IB, BASE CURRENT (mA) 50 3.0 2.6 TJ = 25°C IC = 3.0 A 6.0 A 9.0 A 12 A 10 20 30 2.2 1.8 1.4 1.0 0.5 1.0 2.0 3.0 5.0 50 IB, BASE CURRENT (mA) Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.5 0.2 0.3 20 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages http://onsemi.com 5 10 20 2N6052 PACKAGE DIMENSIONS CASE 1−07 TO−204AA (TO−3) ISSUE Z A N C E D −T− U SEATING PLANE K 2 PL 0.13 (0.005) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. T Q M M Y M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N6052 Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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