ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN 60–80 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5191 2N5192 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 320 Watts mW/C Collector–Emitter Voltage Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 C 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 3.12 C Thermal Resistance, Junction to Case CASE 77–09 TO–225AA TYPE *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 1.0 1.0 — — — — 0.1 0.1 2.0 2.0 — — 0.1 0.1 — 1.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N5191 2N5192 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5191 2N5192 Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C) 2N5191 2N5192 2N5191 2N5192 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5191 2N5192 Vdc ICEO mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. *Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 10 1 Publication Order Number: 2N5191/D 2N5191 2N5192 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS — continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 25 20 10 7.0 100 80 — — — — 0.6 1.4 Unit ON CHARACTERISTICS DC Current Gain (2) (IC = 1.5 Adc, VCE = 2.0 Vdc) hFE — 2N5191 2N5192 2N5191 2N5192 (IC = 4.0 Adc, VCE = 2.0 Vdc) Collector–Emitter Saturation Voltage (2) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Vdc Base–Emitter On Voltage (2) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) — 1.2 Vdc fT 2.0 — MHz DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) hFE , DC CURRENT GAIN (NORMALIZED) (2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. *Indicates JEDEC Registered Data. 10 7.0 5.0 TJ = 150°C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 -55°C 25°C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2.0 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 7.0 10 3.0 IB, BASE CURRENT (mA) 20 Figure 2. Collector Saturation Region http://onsemi.com 2 30 50 70 100 200 300 500 2N5191 2N5192 θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 TJ = 25°C 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 10-1 REVERSE 10-2 25°C FORWARD ICES -0.2 -0.1 0 +0.5 *θV for VCE(sat) 0 -0.5 -1.0 -1.5 θV for VBE -2.0 -2.5 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 107 VCE = 30 V IC = 10 x ICES 106 IC ≈ ICES 105 IC = 2 x ICES 104 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Collector Cut–Off Region Figure 6. Effects of Base–Emitter Resistance t1 APPROX +11 V Vin t2 TURN-OFF PULSE 300 TJ = +25°C RC Vin RB Cjd<<Ceb 200 SCOPE CAPACITANCE (pF) VCC TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) +1.0 Figure 4. Temperature Coefficients 100°C 10-3 -0.4 -0.3 +1.5 Figure 3. “On” Voltages TJ = 150°C 100 *APPLIES FOR IC/IB ≤ IC, COLLECTOR CURRENT (AMP) VCE = 30 V 101 hFE@VCE 2.0V 2 TJ = -65°C to +150°C +2.0 IC, COLLECTOR CURRENT (AMP) 103 102 +2.5 -4.0 V t3 t1 ≤ 7.0 ns 100 < t2 < 500 µs t3 < 15 ns RB and RC varied to obtain desired current levels 100 Ceb 70 50 30 DUTY CYCLE ≈ 2.0% APPROX -9.0 V Ccb 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit Figure 8. Capacitance http://onsemi.com 3 10 20 30 40 2N5191 2N5192 2.0 2.0 IC/IB = 10 TJ = 25°C 1.0 0.7 0.5 0.7 0.5 t, TIME (s) µ tr @ VCC = 30 V 0.3 0.2 tr @ VCC = 10 V 0.1 0.07 0.05 td @ VEB(off) = 2.0 V 0.03 0.02 0.05 0.07 0.1 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2.0 ts′ 1.0 tf @ VCC = 30 V 0.3 0.2 Figure 9. Turn–On Time IC, COLLECTOR CURRENT (AMP) TJ = 150°C 2.0 dc 1.0 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT AT TC = 25°C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5191 0.5 0.2 0.1 1.0 2.0 3.0 4.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on T J(pk) = 150C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100µs 1.0ms 5.0ms 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) Figure 10. Turn–Off Time 10 5.0 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C 0.1 0.07 0.05 0.03 0.02 0.05 0.07 0.1 3.0 4.0 tf @ VCC = 10 V 2N5192 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11. Rating and Thermal Data Active–Region Safe Operating Area 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.1 0.07 0.05 θJC(max) = 3.12°C/W 2N5190-92 θJC(max) = 2.08°C/W MJE5190-92 0.2 0.1 0.05 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 12. Thermal Response http://onsemi.com 4 20 50 100 200 500 1000 2N5191 2N5192 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find θJC(t), multiply the value obtained from Figure 12 by the steady state value θJC. Example: The 2N5190 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in function temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f - Figure A ∆T = r(t) x PP x θJC = 0.27 x 50 x 3.12 = 42.2C http://onsemi.com 5 2N5191 2N5192 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- 2N5191 2N5192 Notes http://onsemi.com 7 2N5191 2N5192 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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