KSC5200 KSC5200 Audio Power Amplifier • • • • High Current Capability : IC=13A High Power Dissipation Wide S.O.A Complement to KSA1943 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 230 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 230 5 V V IC Collector Current(DC) 13 A IB Base Current 1.5 A PC Collector Dissipation (TC=25°C) 130 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 50 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=5mA, IE=0 Min. 230 230 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 ICBO Collector Cut-off Current VCB=230V, IE=0 Typ. Max. Units V V 5 V 5.0 uA 5.0 uA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE1 * DC Current Gain VCE=5V, IC=1A 55 hFE2 DC Current Gain VCE=5V, IC=7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter ON Voltage VCE=5V, IC=7A 1.0 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 200 pF 160 60 * Pulse Test : PW=20us hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 ©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001 KSC5200 Typical Characteristics 1000 16 IB=200mA IC[A], COLLECTOR CURRENT 12 IB = 100mA 10 IB = 80mA 8 IB = 60mA 6 IB = 40mA 4 VCE = 5V hFE, DC CURRENT GAIN IB = 180mA IB = 160mA IB = 140mA IB = 120mA 14 100 10 2 IB = 0 0 0 2 4 6 8 10 12 14 16 18 1 1E-3 20 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC = 10IB VCE(sat)[V], SATURATION VOLTAGE VBE(sat), SATURATION VOLTAGE IC = 10 IB 1 0.1 0.01 1E-3 0.01 0.1 1 10 1 0.1 0.01 100 1E-3 0.001 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 100 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 100 12 VCE = 5V IC MAX. (Pulsed*) 10 10ms* IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 100 8 6 4 2 10 IC MAX. (DC) 100ms* DC 1 0.1 *SINGLE NONREPETITIVE o PULSE TC=25[ C] 0 0.0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 1.4 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B1, Septmeber 2001 KSC5200 Typical Characteristics 160 PC[W], POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001 KSC5200 Package Demensions (8.30) (1.00) (2.00) (7.00) 20.00 ±0.20 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 (7.00) (2.00) (11.00) 1.50 ±0.20 ) .20 .00 0 ±0 0) 2.0 (R (R1 (0.50) ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4