KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Ratings 160 Units V 140 V 8 V Collector Current 700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 160 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 140 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA hFE DC Current Gain VCE=2V, IC=50mA VCE (sat) Collector-Emitter Saturation Voltage IC=200mA, IB=20mA 40 0.2 0.7 VBE (sat) Base-Emitter Saturation Voltage IC=200mA, IB=20mA 0.86 1.0 fT Current Gain Bandwidth Product VCE=10V, IC=50mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 30 400 V V 50 MHz 8 pF hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC1009 Typical Characteristics 100 VCE = 5V IB=0.6mA 80 IB=0.4mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 1000 IB=0.8mA 90 70 60 50 40 30 IB=0.2mA 20 100 10 10 0 1 0 2 4 6 8 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 VCE=2V IC=10IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 V BE(sat) 1 VCE(sat) 0.1 0.01 1 10 100 1000 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob[pF],CAPACTIANCE f=1MHz IE=0 10 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC1009 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3