FAIRCHILD KSC1009GBU

KSC1009
KSC1009
High Voltage Amplifier
•
•
•
•
•
High Collector-Base Voltage : VCBO=160V
Collector Current : IC=700mA
Collector Power Dissipation : PC=800mW
Complement to KSA709
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Ratings
160
Units
V
140
V
8
V
Collector Current
700
mA
PC
Collector Power Dissipation
800
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
160
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
140
V
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
8
V
ICBO
Collector Cut-off Current
VCB=60V, IE=0
0.1
µA
IEBO
Emitter Cut-off Current
VEB=5V, IC=0
0.1
µA
hFE
DC Current Gain
VCE=2V, IC=50mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=200mA, IB=20mA
40
0.2
0.7
VBE (sat)
Base-Emitter Saturation Voltage
IC=200mA, IB=20mA
0.86
1.0
fT
Current Gain Bandwidth Product
VCE=10V, IC=50mA
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
30
400
V
V
50
MHz
8
pF
hFE Classification
Classification
R
O
Y
G
hFE
40 ~ 80
70 ~ 140
120 ~ 240
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC1009
Typical Characteristics
100
VCE = 5V
IB=0.6mA
80
IB=0.4mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1000
IB=0.8mA
90
70
60
50
40
30
IB=0.2mA
20
100
10
10
0
1
0
2
4
6
8
10
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
1000
VCE=2V
IC=10IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
V BE(sat)
1
VCE(sat)
0.1
0.01
1
10
100
1000
100
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
Cob[pF],CAPACTIANCE
f=1MHz
IE=0
10
1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC1009
Package Demensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3