KSA642 KSA642 Low Frequency Power Amplifier • Complement to KSD227 • Collector Power Dissipation : PC = 400mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -30 Units V V VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -300 mA ICP * Collector Current (Pulse) -500 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW≤10ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -30 BVCEO Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -25 BVEBO Emitter-Base Breakdown Voltage IE = -10µA. IC=0 -5 ICBO Collector Cut-off Current VCB= -25V, IE=0 IEBO Emitter Cut-off Current VEB= -3V, IC=0 hFE * DC Current Gain VCE= -1V, IC= -50mA VCE (sat) * Collector-Emitter Saturation Voltage IC= -300mA, IB= -30mA Typ. Max. Units V V V 70 -100 nA -100 nA 400 -0.35 -0.6 V * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA642 Typical Characteristics 1000 -200 IB =-1.4mA IB =-1.2mA -160 -140 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = -1V IB =-1.6mA -180 IB =-1.0mA IB =-0.8mA -120 -100 IB =-0.6mA -80 IB =-0.4mA -60 -40 100 IB =-0.2mA -20 10 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -1 -10 -10 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 Figure 2. DC current Gain -1000 -10 VCE = -1V -1 IC[mA], COLLECTOR CURRENT Ic = 10 IB V BE(sat) (sat) V CE -0.1 -0.01 -100 -10 -1 -1 -10 -100 -1000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltag Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 20 f = 1MHz IE=0 Cob[pF], CAPACITANCE 10 1 -1 -10 -100 -300 VCB [V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA642 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3