Rev 1; 3/08 I2C, 8-Channel Gamma Buffer with EEPROM Features ♦ 8-Bit Gamma DACs, 8 Channels ♦ 1 Byte EEPROM and 1 Byte SRAM per Channel ♦ Ultra-Low Power (2mA IDD, typ) ♦ 400kbps I2C Interface ♦ 9.0V to 15.5V Analog Supply ♦ 2.7V to 5.5V Digital Supply ♦ 20-Pin TSSOP Package ♦ Address Pin Allows Two DS3508s to Reside on the Same I2C Bus Ordering Information Applications TFT-LCD Gamma Buffer Industrial Controls PART TEMP RANGE PIN-PACKAGE DS3508E+ -45°C to +95°C 20 TSSOP DS3508E+T&R -45°C to +95°C +Denotes a lead-free package. T&R = Tape and reel. 20 TSSOP Pin Configuration Typical Operating Circuit TOP VIEW 15.0V 14.8V 8.0V 5.0V 8 SCL 1 20 VCC SDA 2 19 GM1 GND 3 18 GM2 A0 4 17 GM3 VHH 5 16 GM4 VHM 6 15 GM5 SOURCE DRIVER VCC I2C MASTER SDA SCL VDD VHH VHM GM1 GM2 GM3 GM4 DS3508 GM5 GM6 GM7 GM8 A0 GND VLL 0.2V DS3508 LIQUID-CRYSTAL DISPLAY VLM 7 14 GM6 VLM VLL 8 13 GM7 7.0V VDD 9 12 GM8 N.C. 10 11 N.C. TSSOP ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 DS3508 General Description The DS3508 is a programmable 8-channel gamma voltage generator with one byte of on-chip EEPROM and one byte of SRAM memory per channel. Each channel is composed of an independent 8-bit DAC with an associated EEPROM/SRAM pair. At power-up, nonvolatile (NV) EEPROM gamma data is loaded into its corresponding SRAM register that drives the associated 8-bit DAC. An on-chip control register allows selectable control of writing to SRAM/EEPROM or SRAM only. The DS3508 is designed for low-power operation and draws less than 2mA (typ) from the V DD supply. Programming occurs through an I2C-compatible serial interface with support for speeds up to 400kHz. DS3508 I2C, 8-Channel Gamma Buffer with EEPROM ABSOLUTE MAXIMUM RATINGS Voltage Range on VDD and VHH Relative to GND ..........................................-0.5V to +16V Voltage Range on VHM, VLM, and VLL Relative to GND............................................-0.5V to +12V Voltage Range on VCC, SDA, SCL, and A0 Relative to GND ............................................-0.5V to +6.0V Junction Temperature ......................................................+125°C Operating Temperature Range ...........................-45°C to +95°C Programming Temperature Range .........................0°C to +70°C Storage Temperature ..........................................55°C to +125°C Soldering Temperature ..............................................Refer to the IPC/JEDEC J-STD-020 Specification. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (TA = -45°C to +95°C) PARAMETER Analog Supply Voltage SYMBOL VDD CONDITIONS (Note 1) MIN VHH, VHM Applies to GM1–GM4 VLM, VLL Applies to GM5–GM8 0.2 (Note 1) 2.7 VHH–VHM and VLM–VLL Digital Voltage Supply VREF VCC Input Logic 0 (A0, SDA, SCL) VIL Input Logic 1 (A0, SDA, SCL) VIH TYP +9.0 VDD/2 - 1 MAX UNITS +15.5 V VDD - 0.2 V VDD/2 + 1 V 3.0 V 5.5 0.3 x VCC 0.7 x VCC V V V INPUT ELECTRICAL CHARACTERISTICS (VCC = +2.7V to +5.5V, TA = -45°C to +95°C.) PARAMETER SYMBOL CONDITIONS Analog Supply Current IDD VDD = 15.5V (Note 2) Digital Supply Current, NV Read or Write ICC f SCL = 400kHz Digital Supply Standby Current I STBY Input Leakage (SDA, SCL, A0) I IL Input Resistance at VHH, VHM, VLM, VLL RIN 2 MIN VCC = 5.5V (Note 3) VCC = 5.5V TYP MAX UNITS 2 4 mA 0.2 1.0 mA 2 10 µA +1 µA -1 1 _______________________________________________________________________________________ M I2C, 8-Channel Gamma Buffer with EEPROM (VCC = +2.7V to +5.5V; VDD = 15.5V, TA = -45°C to +95°C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS Gamma DAC Resolution MIN TYP MAX UNITS 8 Bits Integral Nonlinearity Error TA = +25°C (Note 4) -1.25 +1.25 LSB Differential Nonlinearity Error TA = +25°C (Note 5) -0.5 +0.5 LSB Output Voltage Range: GM1–GM4 VHM VHH V Output Voltage Range: GM5–GM8 VLL VLM V +35 mV MAX UNITS 400 kHz ROUT (GM1–GM8) ROUT Amplifier Offset (Notes 6, 7) 20 TA = +25°C (Note 8) -35 k I2C ELECTRICAL CHARACTERISTICS (VCC = +2.7V to +5.5V, TA = -45°C to +95°C, timing referenced to VIL(MAX) and VIH(MIN).) (Figure 4) PARAMETER SYMBOL CONDITIONS MIN TYP SCL Clock Frequency f SCL (Note 9) 0 Low Period of SCL tLOW Measured at VIL 1.3 µs High Period of SCL tHIGH Measured at VIH 0.6 µs Bus Free Time Between STOP and START Conditions tBUF 1.3 µs START Setup Time t SU:STA SCL rising through VIH to SDA falling through VIH 0.6 µs Hold Time (Repeated) START Condition tHD:STA SDA falling through VIL to SCL falling through VIH 0.6 µs Data Hold Time tHD:DAT 0 Data Setup Time t SU:DAT 100 0.9 µs ns A0 Setup Time t SU:A Before START 0.6 µs A0 Hold Time tHD:A After STOP 0.6 µs SDA and SCL Rise Time tR (Note 10) 20 + (0.1 x CB) 300 SDA and SCL Fall Time tF (Note 10) 20 + (0.1 x CB) 300 STOP Setup Time t SU:STO SDA and SCL Capacitive Loading CB EEPROM Write Time 0.6 ns ns µs (Note 10) 400 pF tW (Note 11) 20 ms SCL Falling Edge to SDA Output Data Valid tAA SCL falling through VIL to SDA exit 0.3–0.7 x VCC window 900 ns Output Data Hold tDH SCL falling through VIL until SDA in 0.3–0.7 x VCC window 0 ns _______________________________________________________________________________________ 3 DS3508 OUTPUT ELECTRICAL CHARACTERISTICS I2C ELECTRICAL CHARACTERISTICS (continued) (VCC = +2.7V to +5.5V, TA = -45°C to +95°C, timing referenced to VIL(MAX) and VIH(MIN).) (Figure 4) PARAMETER SYMBOL SDA Output Low Voltage CONDITIONS MIN TYP MAX 4mA sink current 0.4 6mA sink current 0.6 UNITS V VOL Input Capacitance on A0, SDA, or SCL CI 5 10 pF TYP MAX UNITS NONVOLATILE MEMORY CHARACTERISTICS (VCC = +2.7V to +5.5V) PARAMETER SYMBOL EEPROM Write Cycles Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: Note 7: Note 8: Note 9: Note 10: Note 11: CONDITIONS MIN TA = +70°C 50,000 Writes All voltages referenced to ground. Analog supply current specified with no load on GMx outputs. ISTBY specified for the inactive state measured with SDA = SCL = VCC. INL = [V(GMx)i - (V(GMx)0]/LSB(ideal) - i, for i = 0 to 254. DNL = [V(GMx)i+1 - (V(GMx)i]/LSB(ideal) - 1, for i = 0 to 255. DAC code = 80h. Outputs unloaded. VHH = 12.0V, VHM = 8.75V, VLM = 6.75V, VLL = 0.5V. Timing shown is for fast-mode (400kHz) operation. This device is also backward compatible with I2C standard mode. CB—Total capacitance of one bus line in picofarads. EEPROM write begins after a STOP condition occurs. Typical Operating Characteristics (VDD = 15.0V, VCC = 5.0V, TA = +25°C, unless otherwise noted.) DIGITAL SUPPLY STANDBY CURRENT vs. DIGITAL SUPPLY VOLTAGE 10 8 9 VCC = 5.5V SDA = SCL = VCC 7 6 5 4 3 3.5 3.0 7 IDD CURRENT (mA) ICC STBY CURRENT (µA) 8 DS3508 toc03 SDA = SCL = VCC 4.0 DS3508 toc02 9 ANALOG SUPPLY CURRENT vs. ANALOG SUPPLY VOLTAGE DIGITAL SUPPLY STANDBY CURRENT vs. TEMPERATURE DS3508 toc01 10 ICC STBY CURRENT (µA) DS3508 I2C, 8-Channel Gamma Buffer with EEPROM 6 5 4 2.5 2.0 1.5 3 1.0 2 2 1 1 0 0 2.0 2.5 3.0 3.5 4.0 VCC (V) 4 4.5 5.0 5.5 6.0 0.5 0 -45 -25 -5 15 35 55 TEMPERATURE (°C) 75 95 8 10 12 VDD (V) _______________________________________________________________________________________ 14 16 I2C, 8-Channel Gamma Buffer with EEPROM GM1–GM4 12 2.5 2.0 1.5 VDD = 15.0V VHH = 14.8V VHM = 8.0V VLM = 7.0V VLL = 0.2V 9 8 6 GM1 = VHH = 14.5V 6 GM OFFSET (mV) GM OUTPUT (V) GM1 = VHH = 12.0V 4 2 0 -2 GM8 = VLM = 8.5V -4 GM8 = VLL = 0.5V 1.0 3 -6 GM5–GM8 GM1 = VHM = 6.5V 0.5 -8 0 -10 0 -25 -5 15 35 55 75 95 0 32 TEMPERATURE (°C) 64 0.75 0 -0.25 0.25 0 -0.25 95 0.25 0 -0.25 -0.50 -0.75 -0.75 -1.00 128 160 192 224 256 75 0.50 -0.50 96 55 VDD = 15.0V VLM = 7.0V VLL = 0.2V 0.75 -0.75 -1.00 0 32 GAMMA SETTING (DEC) 64 96 128 160 192 224 256 GAMMA SETTING (DEC) 0 32 64 96 128 160 192 224 256 GAMMA SETTING (DEC) GM8 INL 1.00 DS3508 toc10 64 35 GM8 DNL -0.50 -1.00 15 1.00 GM8 DNL (LSB) GM1 INL (LSB) 0.25 32 -5 TEMPERATURE (°C) 0.50 VDD = 15.0V VLM = 7.0V VHM = 0.2V 0.75 0.50 GM8 INL (LSB) GM1 DNL (LSB) VDD = 15.0V VHH = 14.8V VHM = 8.0V 0.75 0.50 0 -25 GM1 INL 1.00 DS3508 toc07 VDD = 15.0V VHH = 14.8V VHM = 8.0V -45 128 160 192 224 256 GAMMA SETTING (DEC) GM1 DNL 1.00 96 DS3508 toc08 -45 DS3508 toc09 IDD CURRENT (mA) 3.0 10 DS3508 toc05 3.5 GAMMA OFFSET vs. TEMPERATURE GAMMA OUTPUT vs. SETTING 15 DS3508 toc04 4.0 DS3508 toc06 ANALOG SUPPLY CURRENT vs. TEMPERATURE 0.25 0 -0.25 -0.50 -0.75 -1.00 0 32 64 96 128 160 192 224 256 GAMMA SETTING (DEC) _______________________________________________________________________________________ 5 DS3508 Typical Operating Characteristics (continued) (VDD = 15.0V, VCC = 5.0V, TA = +25°C, unless otherwise noted.) I2C, 8-Channel Gamma Buffer with EEPROM DS3508 Functional Diagram VDD VDD VHH SRAM 1 8-BIT DAC GM1 8-BIT DAC GM2 8-BIT DAC GM3 8-BIT DAC GM4 8-BIT DAC GM5 8-BIT DAC GM6 8-BIT DAC GM7 8-BIT DAC GM8 VCC EEPROM 1 VCC SDA SCL A0 SRAM 2 I2C INTERFACE EEPROM 2 SRAM 3 CONTROL LOGIC CONTROL REGISTERS VHM EEPROM 3 SRAM 4 EEPROM 4 VLM SRAM 5 EEPROM 5 SRAM 6 EEPROM 6 SRAM 7 EEPROM 7 SRAM 8 VLL GND 6 EEPROM 8 DS3508 _______________________________________________________________________________________ I2C, 8-Channel Gamma Buffer with EEPROM PIN NAME TYPE 1 SCL Input FUNCTION 2 SDA Input/ Output Serial Data Input/Output (Open Drain). I2C bidirectional data pin that requires a pullup resistor to realize high logic levels. 3 GND Ground Ground 4 A0 Input 5 VHH Reference Input High-Voltage DAC, Upper Reference 6 VHM Reference Input High-Voltage DAC, Lower Reference 7 VLM Reference Input Low-Voltage DAC, Upper Reference 8 VLL Reference Input Low-Voltage DAC, Lower Reference Serial Clock Input. I2C clock input. Address Input. Determines I2C slave address. 9 VDD Power Analog Supply 10, 11 N.C. — No Connection 12 GM8 13 GM7 14 GM6 15 GM5 16 GM4 17 GM3 18 GM2 19 GM1 20 VCC Output Gamma Analog Outputs 5–8. These pins are the low-voltage gamma outputs referenced to VLL and VLM. Output Gamma Analog Outputs 1–4. These pins are the high-voltage gamma outputs referenced to VHH and VHM. Power Digital Supply Detailed Description The DS3508 provides eight independent DACs that allow precise and repeatable setting of gamma curves. The DS3508 provides four high-voltage DACs (GM1–GM4) that operate between VHH and VHM and four low-voltage DACs (GM5–GM8) that operate between VLM and VLL. Each of the DACs provides 8 bits of resolution. The DS3508 DAC output voltages are independently controlled by the data stored in that channel’s SRAM register. The MODE bit in the volatile control register (CR bit 7) determines how I 2C data is written to the SRAM and EEPROM gamma data registers. Reading and writing to the SRAM/EEPROM gamma data registers is based on the state of the MODE bit as follows: I 2 C writes to memory addresses 00h–07h write to both SRAM 1–8 and EEPROM 1–8. I 2 C reads from addresses 00h–07h read from SRAM 1–8. MODE = 1: I2C writes to addresses 00h–07h write to SRAM 1–8. I 2 C reads from addresses 00h–07h read from SRAM 1–8. Regardless of the MODE bit setting, all I2C reads of address 00–07h return the contents of the SRAM registers. Setting MODE = 1 allows for quick writing of SRAM without the added delay of writing to the associated EEPROM register. The data that is stored in EEPROM and SRAM remains unchanged if the MODE bit is toggled. MODE = 0: _______________________________________________________________________________________ 7 DS3508 Pin Description DS3508 I2C, 8-Channel Gamma Buffer with EEPROM On power-up, the gamma data that is stored in each channel’s EEPROM register is loaded into the corresponding SRAM registers. The volatile CR register powers up as 00h, setting the device into mode 0. DAC Description The DACs are composed of a resistor string array and a switching network per channel. A high-voltage array SDA SCL A0 I2C INTERFACE with end points VHH and VHM controls outputs GM1–GM4, and a low-voltage array with end points VLM and VLL controls outputs GM5–GM8. The resistor string arrays are composed of 255 identical resistors. The switching networks can select any tap point between adjacent resistors as well as either end point (VHH/VHM or VLM/VLL pins). Table 1 shows the relationship between the 8-bit data and the DAC voltage. 8-BIT DAC SRAM GMx EEPROM Figure 1. Single-Channel Block Diagram VHH VLL CODE 0 CODE 0 RH1 RL1 CODE 1 CODE 1 RH2 RL2 CODE 2 CODE 2 RH3 RL3 RH253 RL253 CODE 253 CODE 253 RH254 RL254 CODE 254 CODE 254 RH255 RL255 VHM VLM CODE 255 Figure 2. DAC Block Diagram 8 _______________________________________________________________________________________ CODE 255 I2C, 8-Channel Gamma Buffer with EEPROM DS3508 Table 1. DAC Voltage/Data Relationship for Selected Codes OUTPUT VOLTAGE DATA (BINARY) GM1–GM4 GM5–GM8 0000 0000 VHH VLL 0000 0001 VHH + 1 x (VHM - VHH)/255 VLL+ 1 x (VLM - VLL)/255 0000 0010 VHH + 2 x (VHM - VHH)/255 VLL + 2 x (VLM - VLL)/255 0000 0011 VHH + 3 x (VHM - VHH)/255 VLL + 3 x (VLM - VLL)/255 0000 1111 VHH + 15 x (VHM - VHH)/255 VLL + 15 x (VLM - VLL)/255 0011 1111 VHH + 63 x (VHM - VHH)/255 VLL + 63 x (VLM - VLL)/255 0111 1111 VHH + 127 x (VHM - VHH)/255 VLL + 127 x (VLM - VLL)/255 1111 1101 VHH + 253 x (VHM - VHH)/255 VLL + 253 x (VLM - VLL)/255 1111 1110 VHH + 254 x (VHM - VHH)/255 VLL + 254 x (VLM - VLL)/255 1111 1111 VHM VLM Slave Address Byte and Address Pin LSB MSB 1 1 1 0 1 SLAVE ADDRESS* 0 A0 R/W READ/WRITE BIT *THE SLAVE ADDRESS IS DETERMINED BY ADDRESS PIN A0. Figure 3. DS3508 Slave Address Byte The slave address byte consists of a 7-bit slave address plus a R/W bit (see Figure 3). The DS3508’s slave address is determined by the state of the A0 pin. This pin allows up to two devices to reside on the same I2C bus. Connecting A0 to GND results in a 0 in the corresponding bit position in the slave address. Conversely, connecting A0 to VCC results in a 1 in the corresponding bit position. For example, the DS3508’s slave address byte is E8h when A0 is grounded. I2C communication is described in detail in the I2C Serial Interface Description section. _______________________________________________________________________________________ 9 DS3508 I2C, 8-Channel Gamma Buffer with EEPROM Memory Organization Memory Description The list of registers/memory contained in the DS3508 is shown in the memory map (Table 2). Each of the GMx registers also has a corresponding NV EEPROM register. Additional information regarding reading and writing the memory is located in the I2C Serial Interface Description section. Table 2. Memory Map NAME ADDRESS (HEX) SRAM EEPROM GM1 00 SRAM1 (8 bits) EEPROM1 (8 bits) GM2 01 SRAM2 (8 bits) EEPROM2 (8 bits) GM3 02 SRAM3 (8 bits) EEPROM3 (8 bits) GM4 03 SRAM4 (8 bits) EEPROM4 (8 bits) GM5 04 SRAM5 (8 bits) EEPROM5 (8 bits) GM6 05 SRAM6 (8 bits) EEPROM6 (8 bits) GM7 06 SRAM7 (8 bits) EEPROM7 (8 bits) GM8 07 SRAM8 (8 bits) EEPROM8 (8 bits) Control Register 08 Volatile Control Register N/A Reserved 09–FF Reserved Reserved *All EEPROM1–8 is factory-programmed to 80h. Detailed Register Description Register 08h: Control Register (CR) 08h POWER-UP DEFAULT 00h MEMORY TYPE Volatile MODE Reserved Reserved Reserved Reserved Reserved Reserved Bit 7 Bit 0 Bit 7 MODE 0 = (Default) I2C writes to both SRAM and EEPROM. MODE 1 = I2C writes to SRAM only. Bits 6 to 0 Reserved. This bit determines if data is written to EEPROM and SRAM or only SRAM. 10 Reserved ______________________________________________________________________________________ I2C, 8-Channel Gamma Buffer with EEPROM I2C Definitions The following terminology is commonly used to describe I2C data transfers. (See Figure 4 and the I2C Electrical Characteristics table for additional information.) Master device: The master device controls the slave devices on the bus. The master device generates SCL clock pulses and START and STOP conditions. Slave devices: Slave devices send and receive data at the master’s request. Bus idle or not busy: Time between STOP and START conditions when both SDA and SCL are inactive and in their logic-high states. START condition: A START condition is generated by the master to initiate a new data transfer with a slave. Transitioning SDA from high to low while SCL remains high generates a START condition. STOP condition: A STOP condition is generated by the master to end a data transfer with a slave. Transitioning SDA from low to high while SCL remains high generates a STOP condition. Repeated START condition: The master can use a repeated START condition at the end of one data transfer to indicate that it will immediately initiate a new data transfer following the current one. Repeated STARTS are commonly used during read operations to identify a specific memory address to begin a data transfer. A repeated START condition is issued identically to a normal START condition. Bit write: Transitions of SDA must occur during the low state of SCL. The data on SDA must remain valid and unchanged during the entire high pulse of SCL plus the setup and hold time requirements. Data is shifted into the device during the rising edge of the SCL. Bit read: At the end of a write operation, the master must release the SDA bus line for the proper amount of setup time before the next rising edge of SCL during a bit read. The device shifts out each bit of data on SDA at the falling edge of the previous SCL pulse and the data bit is valid at the rising edge of the current SCL pulse. Remember that the master generates all SCL clock pulses, including when it is reading bits from the slave. Acknowledge (ACK and NACK): An Acknowledge (ACK) or Not Acknowledge (NACK) is always the 9th bit transmitted during a byte transfer. The device receiving data (the master during a read or the slave during a write operation) performs an ACK by transmitting a 0 during the 9th bit. A device performs a NACK by transmitting a 1 during the 9th bit. Timing for the ACK and NACK is identical to all other bit writes. An ACK is the acknowledgment that the device is properly receiving data. A NACK is used to terminate a read sequence or indicates that the device is not receiving data. Byte write: A byte write consists of 8 bits of information transferred from the master to the slave (most significant bit first) plus a 1-bit acknowledgment from the slave to the master. The 8 bits transmitted by the master are done according to the bit write definition and the acknowledgment is read using the bit read definition. SDA tBUF tHD:STA tLOW tR tSP tF SCL tHD:STA STOP tSU:STA tHIGH tSU:DAT START REPEATED START tSU:STO tHD:DAT NOTE: TIMING IS REFERENCED TO VIL(MAX) AND VIH(MIN). Figure 4. I2C Timing Diagram ______________________________________________________________________________________ 11 DS3508 I2C Serial Interface Description DS3508 I2C, 8-Channel Gamma Buffer with EEPROM Byte read: A byte read is an 8-bit information transfer from the slave to the master plus a 1-bit ACK or NACK from the master to the slave. The 8 bits of information that are transferred (most significant bit first) from the slave to the master are read by the master using the bit read definition, and the master transmits an ACK using the bit write definition to receive additional data bytes. The master must NACK the last byte read to terminate communication so the slave returns control of SDA to the master. Slave address byte: Each slave on the I 2 C bus responds to a slave address byte sent immediately following a START condition. The slave address byte contains the slave address in the most significant 7 bits and the R/W bit in the least significant bit. The DS3508’s slave address is determined by the state of the A0 address pin as shown in Figure 3. An address pin connected to GND results in a 0 in the corresponding bit position in the slave address. Conversely, an address pin connected to VCC results in a 1 in the corresponding bit positions. When the R/W bit is 0 (such as in E8h), the master is indicating that it will write data to the slave. If R/W = 1 (E9h in this case), the master is indicating that it wants to read from the slave. If an incorrect slave address is written, the DS3508 assumes the master is communicating with another I2C device and ignores the communication until the next START condition is sent. Memory address: During an I2C write operation, the master must transmit a memory address to identify the memory location where the slave is to store the data. The memory address is always the second byte transmitted during a write operation following the slave address byte. I2C Communication See Figure 5 for I2C communication examples. Writing a single byte to a slave: The master must generate a START condition, write the slave address byte (R/W = 0), write the memory address, write the byte of data, and generate a STOP condition. Remember the master must read the slave’s acknowledgment during all byte write operations. When writing to the DS3508, the DAC adjusts to the new setting following a STOP. The EEPROM (used to make the setting NV) is written following the STOP condition at the end of the write command if the MODE bit is set to 0. 12 Writing multiple bytes to a slave: To write multiple bytes to a slave in one transaction, the master generates a START condition, writes the slave address byte (R/W = 0), writes the starting memory address, writes up to 4 data bytes, and generates a STOP condition. The DS3508 can write 1 to 4 bytes (1 page or row) in a single write transaction. This is internally controlled by an address counter that allows data to be written to consecutive addresses without transmitting a memory address before each data byte is sent. The address counter limits the write to one 4-byte page. The first page begins at address 00h and the second page begins at 04h. Attempts to write to additional pages of memory without sending a STOP condition between pages results in the address counter wrapping around to the beginning of the present row. To prevent address wrapping from occurring, the master must send a STOP condition at the end of the page, then wait for the bus-free or EEPROM-write time to elapse. Then the master can generate a new START condition, and write the slave address byte (R/W = 0) and the first memory address of the next memory row before continuing to write data. Acknowledge polling: Any time a EEPROM byte is written, the DS3508 requires the EEPROM write time (tW) after the STOP condition to write the contents of the byte to EEPROM. During the EEPROM write time, the device does not acknowledge its slave address because it is busy. It is possible to take advantage of this phenomenon by repeatedly addressing the DS3508, which allows communication to continue as soon as the DS3508 is ready. The alternative to acknowledge polling is to wait for a maximum period of tW to elapse before attempting to access the device. Reading a single byte from a slave: Unlike the write operation that uses the specified memory address byte to define where the data is to be written, the read operation occurs at the present value of the memory address counter. To read a single byte from the slave, the master generates a START condition, writes the slave address byte with R/W = 1, reads the data byte with a NACK to indicate the end of the transfer, and generates a STOP condition. However, since requiring the master to keep track of the memory address counter is impractical, the following method should be used to perform reads from a specified memory location. Reading multiple bytes from a slave: The read operation can be used to read multiple bytes with a single transfer. When reading bytes from the slave, the master simply ACKs the data byte if it desires to read another ______________________________________________________________________________________ I2C, 8-Channel Gamma Buffer with EEPROM DS3508 TYPICAL I2C WRITE TRANSACTION MSB START 1 LSB 1 1 0 SLAVE ADDRESS* 1 0 A0 R/W MSB SLAVE ACK b7 LSB b6 READ/ WRITE b5 b4 b3 b2 b1 b0 MSB SLAVE ACK b7 LSB b6 b5 b4 REGISTER ADDRESS b3 b2 b1 b0 SLAVE ACK STOP DATA *THE SLAVE ADDRESS IS DETERMINED BY ADDRESS PIN A0. EXAMPLE I2C TRANSACTIONS (WHEN A0 IS CONNECTED TO GND) E8h A) SINGLE-BYTE WRITE -WRITE CR REGISTER TO 80h START 1 1 1 0 1 0 0 0 B) SINGLE-BYTE READ -READ GM3 START 1 1 1 0 1 0 0 0 C) TWO-BYTE WRITE - WRITE GM1 AND GM2 TO 80h START 1 1 1 0 1 0 0 0 D) TWO-BYTE READ - READ GM1 AND GM2 START 1 1 1 0 1 0 0 0 E8h E8h E8h 08h SLAVE 00001000 ACK 80h SLAVE 10000000 ACK STOP DATA E9h 02h REPEATED START SLAVE SLAVE 00000010 ACK ACK 00h SLAVE SLAVE 00000000 ACK ACK SLAVE ACK 11101001 GM3 MASTER NACK STOP 80h 80h 1000 0 0 0 0 00h SLAVE SLAVE 00000000 ACK ACK SLAVE ACK SLAVE ACK 10000000 11101001 STOP DATA E9h REPEATED START SLAVE ACK SLAVE ACK DATA MASTER ACK GM1 GM2 MASTER NACK STOP Figure 5. I2C Communication Examples byte before terminating the transaction. After the master reads the last byte it must NACK to indicate the end of the transfer and generates a STOP condition. Manipulating the address counter for reads: A dummy write cycle can be used to force the address counter to a particular value. To do this the master generates a START condition, writes the slave address byte (R/W = 0), writes the memory address where it desires to read, generates a repeated START condition, writes the slave address byte (R/W = 1), reads data with ACK or NACK as applicable, and generates a STOP condition. The master must NACK the last byte to inform the slave that no additional bytes are to be read. components minimize lead inductance, which improves performance, and ceramic capacitors tend to have adequate high-frequency response for decoupling applications. SDA and SCL Pullup Resistors SDA is an I/O with an open-collector output that requires a pullup resistor to realize high-logic levels. A master using either an open-collector output with a pullup resistor or a push-pull output driver can be used for SCL. Pullup resistor values should be chosen to ensure that the rise and fall times listed in the electrical characteristics are within specification. A typical value for the pullup resistors is 4.7kΩ. Applications Information Power-Supply Decoupling To achieve the best results when using the DS3508, decouple both power-supply pins (VCC and VDD) with a 0.01µF or 0.1µF capacitor. Use a high-quality ceramic surface-mount capacitor if possible. Surface-mount Package Information (For the latest package outline information, go to www.maxim-ic.com/DallasPackInfo.) PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 20 TSSOP — 56-G2010-000 ______________________________________________________________________________________ 13 DS3508 I2C, 8-Channel Gamma Buffer with EEPROM Revision History REVISION NUMBER REVISION DATE 0 1/08 Initial release. — 1 3/08 In the Nonvolatile Memory Characteristics table, removed TA = +25°C 200,000 write cycle specification for EEPROM write cycles. 4 DESCRIPTION PAGES CHANGED Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 14 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.