Transistor 2SA0838 (2SA838) Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 250 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 ICEO VCE = –20V, IB = 0 –100 Emitter cutoff current IEBO VEB = –5V, IC = 0 Forward current transfer ratio hFE* VCE = –10V, IC = –1mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA – 0.1 V Base to emitter voltage VBE VCE = –10V, IC = –1mA – 0.7 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCE = –10V, IC = –1mA, f = 2MHz 22 50 Ω 1.2 2.0 pF Collector cutoff current Common emitter reverse transfer capacitance *h FE Cre VCE = –10V, IC = –1mA, f = 10.7MHz –10 70 150 µA µA 220 300 MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Note.) The Part number in the Parenthesis shows conventional part number. 1 Transistor 2SA0838 PC — Ta IC — VCE –25 400 350 300 250 200 150 100 IB=–250µA –20 –200µA –15 –150µA –100µA –30 –10 –3 –1 Ta=75˚C 25˚C – 0.1 –50µA –25˚C – 0.03 50 0 80 120 160 200 0 –2 –4 –6 Ta=75˚C 25˚C –25˚C –60 –40 –20 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) –100 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 – 0.1 – 0.3 –100 Collector current IC (mA) –1 –3 –10 –30 –100 Collector to base voltage VCB (V) fT — IE 24 20 400 300 200 100 1 3 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –3 10 30 Emitter current IE (mA) 100 –10 –30 –100 NF — IE VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 0.3 –100 5 Noise figure NF (dB) Power gain PG (dB) 500 –30 Collector to emitter voltage VCE (V) VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C –10 5 PG — IC 600 –3 Cre — VCE 6 VCE=–10V –1 Collector current IC (mA) Cob — VCB –120 –80 – 0.01 – 0.1 – 0.3 –10 Collector to emitter voltage VCE (V) hFE — IC 0 0.1 –8 Common emitter reverse transfer capacitance Cre (pF) 40 Ambient temperature Ta (˚C) Forward current transfer ratio hFE IC/IB=10 – 0.3 –10 –5 0 Transition frequency fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 450 0 2 VCE(sat) — IC –100 –30 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 Emitter current IE (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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