Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Parameter ICBO Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 Conditions min VCB = –10V, IE = 0 typ max Unit –1 –100 nA – 0.01 –1 µA ICEO VCE = –10V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –55 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V VCE = –5V, IC = –2mA 180 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Base to emitter voltage VBE VCE = –1V, IC = –30mA Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz Noise voltage NV *h FE VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 700 – 0.6 –1 200 V V MHz 150 mV Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 2SA1127 Transistor PC — Ta IC — VCE –120 –70 300 250 200 150 100 IB=–200µA –60 –180µA –160µA –50 –140µA –120µA –40 –100µA –80µA –30 –60µA –20 –40µA Collector current IC (mA) 350 Ta=75˚C –25˚C –80 –60 –40 –20 –10 50 –20µA 0 40 60 80 100 120 140 160 0 0 –2 –10 –3 –1 – 0.3 Ta=75˚C –25˚C – 0.03 –3 –10 –30 25˚C 300 –25˚C 200 100 –3 –10 –30 –100 NV — IC IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) 6 5 4 3 2 1 VCE=–10V 90 GV=80dB Function=FLAT 80 70 Rg=100kΩ 60 50 22kΩ 40 5kΩ 30 20 10 –10 –30 –100 Collector to base voltage VCB (V) 0 – 0.01 –1.6 –2.0 200 160 120 80 40 – 0.03 – 0.1 – 0.3 Collector current IC (mA) 1 3 10 30 Emitter current IE (mA) 100 7 –1.2 0 –1 Collector current IC (mA) 8 – 0.8 VCB=–5V Ta=25˚C Ta=75˚C 400 Cob — VCB –3 – 0.4 Base to emitter voltage VBE (V) 240 0 – 0.1 – 0.3 –100 10 9 0 fT — IE 500 Collector current IC (mA) 0 –1 –12 VCE=–5V Forward current transfer ratio hFE –30 –1 –10 600 IC/IB=10 – 0.01 – 0.1 – 0.3 –8 hFE — IC –100 25˚C –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.1 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C –100 400 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C 450 0 2 IC — VBE –80 Collector current IC (mA) Collector power dissipation PC (mW) 500 –1 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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