4AC13 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 5 4 ID 1 1 10 6 7 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID ID 10 4AC13 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Collector current IC 5 A Collector peak current IC(peak) 10 A Diode current ID 5 A 1 4 W 1 PC* (TC = 25°C) 28 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Collector power dissipation Note: PC* 1. 4 devices operation. Electrical Characteristics (for each device, Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CBO voltage 50 — — V IC = 1 mA, IE = 0 Collector to emitter sustain voltage VCEO(SUS) 50 — 70 V IC = 2 A, L = 10 mH, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 50 mA, IC = 0 Collector cutoff current ICBO — — 10 µA VCB = 40 V, IE = 0 ICEO — — 10 VCE = 40 V, RBE = ∞ hFE 2000 — 20000 VCE = 2 V, IC = 3 A* 1 hFE 1000 — — VCE = 2 V, IC = 5 A* 1 Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 3 A, IB = 3 mA* 1 Base to emitter saturation voltage VBE(sat) — — 2.0 V IC = 3 A, IB = 3 mA* 1 C to E diode forward current VD — — 3.5 V ID = 5 A DC current transfer ratio Note: 2 1. Pulse test. 4AC13 Maximum Collector Dissipation Curve Collector power dissipation PC (W) 6 4 device operation 3 device operation 4 2 device operation 1 device operation 2 0 50 100 Ambient temperature Ta (°C) 150 Note: Collector power dissipation of each devices is identical. Maximum Collector Dissipation Curve Collector power dissipation PC (W) 30 4 device operation 3 device operation 20 2 device operation 10 1 device operation 0 50 100 Case temperature TC (°C) 150 Area of Safe Operation 0.3 ms ms D (T C O C = per 25 at °C ion ) 1.0 =1 IC(max) 10 3.0 iC(peak) PW Collector current IC (A) 10 0.1 0.03 Ta = 25°C 1 shot pulse 0.01 0.1 0.3 1.0 3.0 10 30 100 Collector to emitter voltage VCE (V) Typical Output Characteristics Collector current IC (A) 5 1 mA 900 800 700 4 3 600 500 300 µA 400 2 1 IB = 0 TC = 25°C 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 3 4AC13 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 100,000 10,000 °C 75 1,000 Ta = °C 25 5°C 2 – VCE = 2 V Collector to emitter saturation voltage VCE(sat) (V) 100 0.1 0.3 1.0 3.0 Collector current IC (A) 10 Collector to Emitter Saturatiion Voltage vs. Collector Current 10 3 Ta = –25°C 25°C 75°C 1.0 0.3 0.1 0.03 IC = 1000 IB 0.3 3.0 1.0 Collector current IC (A) 10 Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturatiion Voltage vs. Collector Current 10 Ta = –25°C 3.0 25°C 75°C 1.0 0.3 0.1 0.1 IC = 1000 IB 1.0 3.0 0.3 Collector current IC (A) 10 Typical Transfer Characteristics Collector current IC (A) 5 4 3 Ta = 75°C 25°C –25°C 2 1 0 4 VCE = 2 V 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 4AC13 Zener Voltage vs. Case Temperature Zener voltage VZ (VCBO) (V) 90 IC = 1 mA IE = 0 80 70 60 50 40 0 50 100 25 75 Case temperature TC (°C) 125 Thermal resistance θj-c (°C/W) Transient Thermal Resistance 10 10 s to s m 10 1.0 s 0µ 0.1 to 10 ms 1 TC = 25°C 0.02 0.01 0.1 1.0 10 (s) 0.01 0.1 1.0 10 (ms) Time t 5 4AC13 Unit: mm 26.5 ± 0.3 1 1.82 2.54 1 2 3 5 6 1.2 8 7 9 10 0.55 0.55 ± 0.1 10 Pin No. 1 2 3 4 5 6 7 8 9 10 Electrode E B C B C B C B C E Note: B: Base C: Collector E: Emitter 6 4 1.4 1.5 ± 0.2 10.5 ± 0.5 2.5 10.0 ± 0.3 4.0 ± 0.2 4AC13 When using this document, keep the following in mind: 1. 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