ETC 2SB1403

2SB1403
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1
12
3
1. Base
2. Collector
3. Emitter
ID
3.0 kΩ
(Typ)
180 Ω
(Typ)
3
2SB1403
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–120
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–6
A
Collector peak current
IC(peak)
–12
A
Collector power dissipation
PC
2
W
PC*
1
Junction temperature
Tj
Storage temperature
Tstg
C to E diode forward current
Note:
ID *
25
1
150
°C
–55 to +150
°C
6
A
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–120
—
—
V
IC = –0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–120
—
—
V
IC = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
IE = –50 mA, IC = 0
Collector cutoff current
ICBO
—
—
–10
µA
VCB = –100 V, IE = 0
ICEO
—
—
–10
VCE = –100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
VCE = –3 V, IC = –3 A*
Collector to emitter saturation
voltage
VCE(sat)1
—
—
–1.5
VCE(sat)2
—
—
–3.0
VBE(sat)1
—
—
–2.0
VBE(sat)2
—
—
–3.5
VD
—
—
3.0
Base to emitter saturation
voltage
C to E diode forward voltage
Note:
1. Pulse test.
See switching characteristic curve of 2SB1106.
2
V
1
IC = –3 A, IB = –6 mA*
1
1
IC = –6 A, IB = –60 mA*
V
IC = –3 A, IB = –6 mA*
1
1
IC = –6 A, IB = –60 mA*
V
ID = 6 A*
1
2SB1403
Maximum Collector Dissipation Curve
Area of Safe Operation
µs
–0.2
0
50
100
Case temperature TC (°C)
–0.02
–3
150
–10
–30
–100
–300
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
Collector current IC (A)
–6
–4
–2
5W
=2
–8
–5–.0
4.5
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5 mA
IB = 0
0
–2
–3
–4
–5
–1
Collector to emitter voltage VCE (V)
10000
DC current transfer ratio hFE
PC
–10
)
°C
–0.05
25
Ta = 25°C
1 Shot Pulse
–0.1
s
–0.5
1m
–1.0
=
s
C
0 m ion(T
t
era
Op
10
–2
DC
20
–5
=1
Collector current IC (A)
C(max)
s
1µ
100
–20 i
C(peak)
–10 I
PW
Collector power dissipation PC (W)
30
3000
Ta
1000
300
100
–0.1
=
°C
75
°C
25
5°C
–2
VCE = –3 V
–3
–0.3
–1.0
Collector current IC (A)
–10
3
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter sauration voltage VBE(sat) (V)
2SB1403
Saturation Voltage vs.
Collector Current
–10
TC = 25°C
200
–3
VBE(sat)
500
–1.0
VCE(sat)
IC/IB = 200
–0.3
–0.1
–0.1
–0.3
–1.0
–3
Collector current IC (A)
–10
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
10
3
0.3
0.1
1m
4
TC = 25°C
1.0
10 m
100 m
1.0
Time t (s)
10
100
1000
2SB1403
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
5
2SB1403
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
6
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