2SB874 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –100 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –5 V Collector current IC –2 A Collector peak current IC(peak) –3 A 20 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C 2SB874 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –100 — — V IC = –1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –60 — — V IC = –10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –1 mA, IC = 0 Collector cutoff current ICBO — — –1.0 µA VCB = –80 V, IE = 0 Emitter cutoff current IEBO — — –1.0 µA VEB = –5 V, IC = 0 60 — 200 VCE = –5 V, IC = –0.5 A* hFE2 40 — — VCE = –5 V, IC = –2 A* 2 Base to emitter voltage VBE — — –1.4 V VCE = –5 V, IC = –2 A* 2 Collector to emitter saturation voltage VCE(sat) — –0.6 –1.0 V IC = –1.5 A IB = –0.15 A* Gain bandwidth product fT — 250 — MHz VCE = –5 V, IC = –0.5 A* Collector output capacitance Cob — 50 — pF VCB = –10 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 2 2 2 Notes: 1. The 2SB874 is grouped by hFE as follows. 2. Pulse test B C 60 to 120 100 to 200 Maximum Collector Dissipation Curve Area of Safe Operation 20 10 –3 –1.0 (–20 V, –1 A) –0.3 Ta = 25°C 1 Shot pulse –0.1 IC (max) (–10 V, –2 A) –0.03 50 100 Case Temperature TC (°C) 150 (–13.3 V, –3 A) (–30 V, –1.33 A) s 1m = on PW ati ms er ) Op 25°C DC = (T C Collector Current IC (A) iC (peak) (–10 V, –3 A) 0 2 –10 10 Collector power dissipation Pc (W) 30 –0.01 –2 (–60 V, –0.25 A) (–60 V, –0.15 A) (–60 V, –0.1 A) –5 –10 –20 –50 –100 –200 Collector to emitter Voltage VCE (V) 2SB874 Typical Transfer Characteristics –10 –9 –2 –8 –7 –6 –1.0 Collector current IC (A) Collector Current IC (A) –0.8 –1 –12 1 Typical Output Characteristics –1.0 –5 –0.6 –4 –3 –0.4 –2 –1 mA –0.2 TC = 25°C 0 –0.5 75°C –0.2 –0.1 –0.05 VCE = –5 V IB = 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) –0.02 –0.5 –1.0 –1.5 Base to emitter voltage VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) 1,000 DC current transfer ratio hFE VCE = –5 V 500 TC = 75°C 25°C 200 100 –25°C 50 20 10 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Collector current IC (A) TC = 25°C –25°C –2 –1.0 –0.3 75°C –0.1 25°C TC = –25°C –0.03 IC/IB = 10 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Collector current IC (A) –2 3 2SB874 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 2SB874 Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5