ETC 2SD2323

2SD2323
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Features
• Built-in High voltage zener diode (300 V)
• High speed switching
Outline
TO-220FM
2
1
12
3
1. Base
2. Collector
3. Emitter
ID
1.6 kΩ
(Typ)
160 Ω
(Typ)
3
2SD2323
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
6
A
6
A
10
A
30
W
1
Diode current
ID*
Collector peak current
IC(peak)
1
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
300
—
420
V
IC = 0.1 mA, IE = 0
Collector to emitter sustain
voltage
VCEO(SUS)
300
—
—
V
IC = 3 A, RBE = ∞, L = 10 mH
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
IE = 50 mA, IC = 0
Collector cutoff current
ICEO
—
—
100
µA
VCE = 300 V, RBE = ∞
DC current transfer ratio
hFE
500
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
IC = 4 A, IB = 40 mA
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
IC = 4 A, IB = 40 mA
Emitter to collector forward
voltage
VECF
—
—
3.5
V
IF = 6 A
Turn on time
ton
—
1.2
—
µs
IC = 4 A, VCC = 20 V
IB1 = –IB2 = 40 mA
Storage time
tstg
—
8.0
—
Fall time
tf
—
8.0
—
2
VCE = 2 V, IC = 4 A
2SD2323
Maximum Collector Dissipation Curve
Collector power dissipation Pc (W)
30
20
10
0
50
100
Case temperature TC (°C)
150
Area of Safe Operation
30
ot)
sh
(1
µs
00
)
t
=5
ho
)
t
1s
PW
s(
sho
tion
(1
1m
era
Op °C)
DC = 25
(T C
iC (peak)
IC (max)
3
10
ms
Collector current IC (A)
10
1.0
0.3
0.1
0.03
0.01
0.003
1
3
10
30
100 300 1,000
Collector to emitter voltage VCE (V)
Typical Output Characteristics
Collector current IC (A)
1.
8
3
5
4
2
1. 1.0
0.8
0.6
3
0.5
0.4
2
IB = 0.35 mA
1
TC = 25°C
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
10,000
3,000
Ta = 75°C
1,000
300
100
30
10
0.1
25°C
–25°C
VCE = 2 V
Pulse test
0.3
1.0
3
Collector current IC (A)
10
3
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD2323
Saturation Voltage vs. Collector Current
10
lC = 100 lB
–25°C
3
75°C
25°C
VBE (sat)
1.0
VCE (sat)
0.3
25°C
75°C
–25°C
0.1
0.1
0.3
1.0
3
10
30
Collector current IC (A)
100
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
100
TC = 25°C
30
10
0.1 s to 100 s
3
1.0
s to
100
ms
1m
0.3
0.1
0.1
1.0
10
100 (s)
0.1
1.0
10
100 (ms)
Time t
Zener Voltage vs. Ambient Temperature
Zener voltage VZ (VCBO) (V)
500
400
300
IC = 0.1 mA
IE = 0
200
100
0
–20
4
0
20
40
60
Ambient temperature Ta (°C)
80
2SD2323
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