ETC 2SD2111

2SD2111
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1
12
3
1. Base
2. Collector
3. Emitter
ID
3.0 kΩ
(Typ)
400 Ω
(Typ)
3
2SD2111
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
3
A
Collector peak current
IC(peak)
6
A
Collector power dissipation
PC
2
W
PC*
1
Junction temperature
Tj
Storage temperature
Tstg
C to E diode forward current
Note:
ID *
25
1
150
°C
–55 to +150
°C
3
A
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
120
—
—
V
IC = 0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
IE = 50 mA, IC = 0
Collector cutoff current
ICBO
—
—
10
µA
VCB = 100 V, IE = 0
ICEO
—
—
10
VCE = 100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
VCE = 3 V, IC = 1.5 A*
Collector to emitter saturation
VCE(sat)1
—
—
1.5
voltage
VCE(sat)2
—
—
3.0
Base to emitter saturation
VBE(sat)1
—
—
2.0
voltage
VBE(sat)2
—
—
3.5
C to E diode forward voltage
VD
—
—
3.0
Note:
1. Pulse test.
See switching characteristic curve of 2SD1605.
2
V
IC = 1.5 A, IB = 3 mA*
IC = 3 A, IB = 30 mA*
V
ID = 3 A*
1
1
1
IC = 1.5 A, IB = 3 mA*
IC = 3 A, IB = 30 mA*
V
1
1
1
2SD2111
Maximum Collector Dissipation Curve
Collector power dissipation Pc (W)
30
20
10
0
50
100
Case temperature TC (°C)
150
Area of Safe Operation
s
s
1m
0m
=1
PW
IC (max)
DC
1.0
era
Op
tion
0.3
100 µs
s
iC (peak)
3
Collector current IC (A)
1µ
10
(T C
Ta = 25°C
0.1 1 Shot Pulse
=2
)
5°C
0.03
0.01
0.3
1.0
3
10
30
100 300
Collector to emitter voltage VCE (V)
Typical Output Characteristics
Collector current IC (A)
5
TC = 25°C 5
4
2.5
2
1.5
4
1
3
3
0.5 mA
2
1
IB = 0
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
10,000
VCE = 3 V
5,000
°C
75
=
T C 25°C
C
5°
–2
2,000
1,000
500
200
100
0.1
0.2
0.5 1.0
2
5
Collector current IC (A)
10
3
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD2111
Saturation Voltage vs. Collector Current
10
5
200
VBE (sat)
2
500
1.0
lC/lB = 200
0.5
VCE (sat)
TC = 25°C
0.2
0.1
0.1
0.2
0.5 1.0
2
5
Collector current IC (A)
10
Thermal resistance θj-c (°C/W)
Transient Thermal Resistance
10
3
TC = 25°C
1.0
0.3
0.1
1m
10m
100m
1.0
Time t (s)
4
10
100
1000
2SD2111
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of this document without Hitachi’s permission.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
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APPLICATIONS.
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5