3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature MPAK-4 • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) 2 3 Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V ——————————————————————– Gate 2 to source voltage VG2S ±10 V ——————————————————————– Drain current ID 35 mA ——————————————————————– Channel power dissipation Pch 150 mW ——————————————————————– Channel temperature Tch 125 °C ——————————————————————– Storage temperature Tstg –55 to +125 °C ——————————————————————– 1 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain 3SK233 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ———————————————————————————————————————————————– Drain to source breakdown voltage V(BR)DSX 12 — — V ID = 200 µA, VG1S = –5 V, VG2S = –5 V ———————————————————————————————————————————————– Gate 1 to source breakdown voltage V(BR)G1SS ±10 — — V IG1 = ±10 µA, VG2S = VDS = 0 ———————————————————————————————————————————————– Gate 2 to source breakdown voltage V(BR)G2SS ±10 — — V IG2 = ±10 µA, VG1S = VDS = 0 ———————————————————————————————————————————————– Gate 1 cutoff current IG1SS — — ±100 nA VG1S = ±8 V, VG2S = VDS = 0 ———————————————————————————————————————————————– Gate 2 cutoff current IG2SS — — ±100 nA VG2S = ±8 V, VG1S = VDS = 0 ———————————————————————————————————————————————– Drain current IDSS 0 — 2 mA VDS = 6 V, VG1S = 0, VG2S = 3 V ———————————————————————————————————————————————– Gate 1 to source cutoff voltage VG1S(off) –0.7 — +0.7 V VDS = 10 V, VG2S = 3 V, ID = 100 µA ———————————————————————————————————————————————– Gate 2 to source cutoff voltage VG2S(off) –0.1 — +0.8 V VDS = 10 V, VG1S = 3 V, ID = 100 µA ———————————————————————————————————————————————– Forward transfer admittance |yfs| 14 — — mS VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 kHz ———————————————————————————————————————————————– Input capacitance Ciss 0.9 1.25 1.8 pF VDS = 6 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 1 MHz Output capacitance Coss 0.4 0.7 1.2 pF ———————————————————————————————————– Reverse transfer capacitance Crss — 0.015 0.03 pF ———————————————————————————————————————————————– Power gain PG 16 19.4 — dB VDS = 4 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 900 MHz Noise figure NF — 2.8 4 dB ———————————————————————————————————————————————–