ETC 3SK233

3SK233
Silicon N Channel Dual Gate MOS FET
UHF TV Tuner RF Amplifier
Feature
MPAK-4
• Low voltage operation.
• Superior cross modulation characteristics.
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
2
3
Item
Symbol Rating
Unit
——————————————————————–
Drain to source voltage
VDS
12
V
——————————————————————–
Gate 1 to source voltage
VG1S
±10
V
——————————————————————–
Gate 2 to source voltage
VG2S
±10
V
——————————————————————–
Drain current
ID
35
mA
——————————————————————–
Channel power dissipation Pch
150
mW
——————————————————————–
Channel temperature
Tch
125
°C
——————————————————————–
Storage temperature
Tstg
–55 to +125 °C
——————————————————————–
1
4
1.
2.
3.
4.
Source
Gate 1
Gate 2
Drain
3SK233
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test condition
———————————————————————————————————————————————–
Drain to source breakdown voltage
V(BR)DSX 12
—
—
V
ID = 200 µA, VG1S =
–5 V, VG2S = –5 V
———————————————————————————————————————————————–
Gate 1 to source breakdown voltage
V(BR)G1SS ±10 —
—
V
IG1 = ±10 µA,
VG2S = VDS = 0
———————————————————————————————————————————————–
Gate 2 to source breakdown voltage
V(BR)G2SS ±10 —
—
V
IG2 = ±10 µA,
VG1S = VDS = 0
———————————————————————————————————————————————–
Gate 1 cutoff current
IG1SS
—
—
±100 nA
VG1S = ±8 V,
VG2S = VDS = 0
———————————————————————————————————————————————–
Gate 2 cutoff current
IG2SS
—
—
±100 nA
VG2S = ±8 V,
VG1S = VDS = 0
———————————————————————————————————————————————–
Drain current
IDSS
0
—
2
mA
VDS = 6 V, VG1S = 0,
VG2S = 3 V
———————————————————————————————————————————————–
Gate 1 to source cutoff voltage
VG1S(off) –0.7 —
+0.7 V
VDS = 10 V, VG2S = 3 V,
ID = 100 µA
———————————————————————————————————————————————–
Gate 2 to source cutoff voltage
VG2S(off) –0.1 —
+0.8 V
VDS = 10 V, VG1S = 3 V,
ID = 100 µA
———————————————————————————————————————————————–
Forward transfer admittance
|yfs|
14
—
—
mS
VDS = 6 V, VG2S = 3 V,
ID = 10 mA, f = 1 kHz
———————————————————————————————————————————————–
Input capacitance
Ciss
0.9
1.25 1.8
pF
VDS = 6 V, VG2S = 3 V,
———————————————————————————————————– ID = 10 mA, f = 1 MHz
Output capacitance
Coss
0.4
0.7
1.2
pF
———————————————————————————————————–
Reverse transfer capacitance
Crss
—
0.015 0.03 pF
———————————————————————————————————————————————–
Power gain
PG
16
19.4 —
dB
VDS = 4 V, VG2S = 3 V,
———————————————————————————————————– ID = 10 mA, f = 900 MHz
Noise figure
NF
—
2.8
4
dB
———————————————————————————————————————————————–