3SK197 Silicon N Channel Dual Gate MOS FET VHF RF Amplifier VHF TV Tuner RF Amplifier, Frequency Converter Features MPAK-4 • Compact package • High conversion gain (24 dB typ.) Table 1 Absolute Maximum Ratings (Ta = 25°C) 2 3 Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V ——————————————————————– Gate 2 to source voltage VG2S ±10 V ——————————————————————– Drain current ID 35 mA ——————————————————————– Channel dissipation Pch 150 mW ——————————————————————– Channel temperature Tch 125 °C ——————————————————————– Storage temperature Tstg –55 to +125 °C ——————————————————————– 1 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain 3SK197 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ———————————————————————————————————————————————– Drain to source breakdown voltage V(BR)DSX 12 — — V VG1S = VG2S = –5 V, ID = 200 µA ———————————————————————————————————————————————– Gate 1 to source breakdown voltage V(BR)G1SS ±10 — — V IG1 = ±10 µA, VG2S = VDS = 0 ———————————————————————————————————————————————– Gate 2 to source breakdown voltage V(BR)G2SS ±10 — — V IG2 = ±10 µA, VG1S = VDS = 0 ———————————————————————————————————————————————– Gate 1 cutoff current IG1SS — — ±100 nA VG1S = ±8 V, VG2S = VDS = 0 ———————————————————————————————————————————————– Gate 2 cutoff current IG2SS — — ±100 nA VG2S = ±8 V, VG1S = VDS = 0 ———————————————————————————————————————————————– Gate 1 to source cutoff voltage VG1S(off) 0 — –1 V VDS = 10 V, VG2S = 3 V, ID = 100 µA ———————————————————————————————————————————————– Gate 2 to source cutoff voltage VG2S(off) 0 — –1 V VDS = 10 V, VG1S = 3 V, ID = 100 µA ———————————————————————————————————————————————– Drain current IDSS 1 4 10 mA VDS = 6 V, VG2S = 3 V, VG1S = 0 ———————————————————————————————————————————————– Forward transfer admittance |yfs| 20 27 — mS VDS = 6 V, VG2S = 4.5 V, ID = 5 mA, f = 1 kHz ———————————————————————————————————————————————– Input capacitance Ciss — 4.3 5.5 pF VDS = 6 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 1 MHz Output capacitance Coss — 2.2 3 pF ———————————————————————————————————– Reverse transfer capacitance Crss — 0.03 0.04 pF ———————————————————————————————————————————————– Power gain PG 28 30 — dB VDS = 6 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 200 MHz Noise figure NF — 1.4 2.5 dB ———————————————————————————————————————————————– Conversion gain CG 20 24.6 — dB VDS = 6 V, VG2S = 4.5 V, ID = 2 mA, f = 200 MHz, fOSC = 230 NHz ———————————————————————————————————————————————– • Marking is “WI-”.