3SK288 Silicon N Channel Dual Gate MOS FET Application VHF TV tuner RF amplifier MPAK-4 Features 2 3 • Low nose figure. NF = 1.5 dB typ.at f = 200 MHz • High gain. PG = 28.5 dB typ.at f = 200 MHz 1 4 1. Source 2. Gate 1 3. Gate 2 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDS 12 V ——————————————————————————————————————————— Gate1 to source voltage VG1S ±8 V ——————————————————————————————————————————— Gate2 to source voltage VG2S ±8 V ——————————————————————————————————————————— Drain current ID 25 mA ——————————————————————————————————————————— Channel power dissipation Pch 150 mW ——————————————————————————————————————————— Channel temperature Tch 125 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +125 °C ——————————————————————————————————————————— Note: Attention: Marking is "ZH–" This device is very sensitive to electro static discharge. It is recommended to adopt apppropriate cautions when handing this transistor. 3SK288 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol min. typ. max. Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSX 12 — — V ID = 200 µA, VG1S = –3 V, VG2S = –3 V ——————————————————————————————————————————— Gate1 to source breakdown voltage V(BR)G1SS ±8 — — V IG1 = ±10 µA, VG2S = VDS = 0 ——————————————————————————————————————————— Gate2 to source breakdown voltage V(BR)G2SS ±8 — — V IG2 = ±10 µA, VG1S = VDS = 0 ——————————————————————————————————————————— Gate1 cutoff current IG1SS — — ±100 nA VG1S = ±6 V, VG2S = VDS = 0 ——————————————————————————————————————————— Gate2 cutoff current IG2SS — — ±100 nA VG2S = ±6 V, VG1S = VDS = 0 ——————————————————————————————————————————— Drain current IDS(on) 1 — 10 mA VDS = 4 V, VG1S = 0.75 V, VG2S = 3 V ——————————————————————————————————————————— Gate1 to source cutoff voltage VG1S(off) 0 — +0.6 V VDS = 10 V, VG2S = 3V, ID = 100 µA ——————————————————————————————————————————— Gate2 to source cutoff voltage VG2S(off) 0 — +1.0 V VDS = 10 V, VG1S = 3V, ID = 100 µA ——————————————————————————————————————————— Forward transfer admittance |yfs| 18 23 — mS VDS = 4V, VG2S = 3 V, ID = 10 mA, f = 1 kHz ——————————————————————————————————————————— Input capacitance Ciss 2.4 3.0 3.6 pF —————————————————————————————— Output capacitance Coss 1.0 1.4 1.8 pF VDS = 4. V, VG2S = 3 V,ID = 10 mA, f = 1 MHz —————————————————————————————— Reverse transfer capacitance Crss — 0.022 0.03 pF ——————————————————————————————————————————— Power gain PG 23 28.5 — dB —————————————————————————————— Noise figure NF — 1.5 2.5 VDS = 4 V, VG2S = 3 V, ID = 10 mA, f = 200 MHz dB ——————————————————————————————————————————— 3SK288 20 200 Typical Output Characteristics VG2S = 3 V 1.2 V I D (mA) 16 150 Drain Current 12 100 50 0 20 Drain Current vs. Gate 1 to Source Voltage 0.6 V 4 20 2.5 V 2.0 V 16 12 1.5 V 8 VG2S = 1.0 V 4 2 4 6 8 10 Drain to Source Voltage V DS (V) Drain Current vs. Gate 2 to Source Voltage V DS = 4 V 2.5 V I D (mA) I D (mA) 8 0 50 100 150 200 Ambient Temperature Ta (°C) 3.0 V Drain Current 0.9 V VG1S = 0.3 V Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 16 1.5 V 2.0 V 1.0 V 12 8 4 VG1S = 0.5 V V DS = 4 V 0 1 2 3 4 5 Gate 1 to Source Voltage V G1S (V) 0 1 2 3 4 5 Gate 2 to Source Voltage V G2S (V) Forward Transfer Admittance vs. Gate 1 to Source Voltage Power Gain vs. Drain Current 40 30 18 12 2.5 V 2.0 V 1.5 V 6 0 0.5 V 0.4 0.8 1.2 1.6 2.0 Noise Figure vs. Drain Current Noise Figure NF (dB) 5 VDS = 4 V VG2S = 3 V f = 200 MHz 4 3 2 1 4 32 24 16 8 1.0 V Gate1 to Source Voltage VG1S (V) 0 VDS = 4 V VG2S = 3 V f = 200 MHz V G2S = 3.0 V PG (dB) 24 VDS = 4 V f = 1 kHz Power Gain Forward Transfer Admittance |y fs | (mS) 3SK288 8 Drain Current 12 16 I D (mA) 20 0 4 8 Drain Current 12 16 I D (mA) 20 3SK288 S11 Parameter vs. Frequency S21 Parameter vs. Frequency 1 90° .8 1.5 .6 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –90° Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.004 / div. .8 60° 120° –60° –120° –1.5 –1 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) –2 –.6 –.8 –1 –1.5 Condition: V DS = 4 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) 3SK288 Table 3 S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω) f (MHz) S11 S21 S12 S22 ——————— ——————— ——————— ——————— MAG MAG MAG MAG ANG ANG ANG ANG ——————————————————————————————————————————— 50 0.997 –4.6 2.37 173 0.001 83.2 0.989 –2.8 ——————————————————————————————————————————— 100 0.986 –10.6 2.35 165 0.002 84.7 0.986 –5.6 ——————————————————————————————————————————— 150 0.978 –16.5 2.31 157 0.002 84.6 0.984 –8.1 ——————————————————————————————————————————— 200 0.964 –22.1 2.28 149 0.003 78.1 0.982 –10.7 ——————————————————————————————————————————— 250 0.946 –27.6 2.22 141 0.004 75.6 0.977 –13.6 ——————————————————————————————————————————— 300 0.921 –33.3 2.16 133 0.005 74.9 0.969 –16.2 ——————————————————————————————————————————— 350 0.906 –38.8 2.10 126 0.005 79.4 0.962 –18.8 ——————————————————————————————————————————— 400 0.875 –43.6 2.03 118 0.006 75.8 0.956 –21.2 ——————————————————————————————————————————— 450 0.853 –48.5 1.96 112 0.006 78.3 0.950 –23.8 ——————————————————————————————————————————— 500 0.824 –53.4 1.89 105 0.006 78.9 0.945 –26.1 ——————————————————————————————————————————— 550 0.801 –57.6 1.81 97.9 0.006 81.9 0.938 –28.7 ——————————————————————————————————————————— 600 0.770 –62.3 1.74 91.1 0.007 85.0 0.931 –31.3 ——————————————————————————————————————————— 650 0.748 –66.2 1.66 85.0 0.008 84.9 0.925 –33.5 ——————————————————————————————————————————— 700 0.721 –70.3 1.59 78.8 0.008 86.7 0.918 –35.9 ——————————————————————————————————————————— 750 0.695 –74.2 1.52 72.5 0.009 90.5 0.914 –38.4 ——————————————————————————————————————————— 800 0.671 –78.0 1.46 66.7 0.009 90.1 0.907 –40.9 ——————————————————————————————————————————— 850 0.650 –81.7 1.40 60.6 0.009 92.3 0.901 –43.3 ——————————————————————————————————————————— 900 0.630 –85.3 1.34 54.7 0.010 92.4 0.895 –45.9 ——————————————————————————————————————————— 950 0.612 –89.1 1.28 49.3 0.011 91.8 0.888 –48.2 ——————————————————————————————————————————— 1000 0.519 –92.1 1.22 43.6 0.012 92.7 0.883 –50.9 ——————————————————————————————————————————— 3SK288 Package Dimensions Unit : mm + 0.3 2.8 – 0.1 2 + 0.1 0.4 – 0.05 0.65 – 0.3 + 0.1 0.4 – 0.05 3 + 0.1 1.9 0.95 0.95 + 0.1 1 0.16 – 0.06 4 1.5 0 ~ 0.1 + 0.1 0.6 – 0.05 0.95 + 0.1 1 + 0.1 0.4 – 0.05 0.65– 0.3 4 + 0.2 2.8 – 0.6 2 3 0.85 1. Source 2. Gate 1 3. Gate 2 4. Drain 1.1– 0.1 + 0.2 0.3 1.8 Hitachi Code EIAJ JEDEC MPAK–4 SC-61AA —