2SK2795 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-466 A (Z) 2nd. Edition November. 1996 Features • • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz) Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2795 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 10 V Gate to source voltage VGSS ±6 V Drain current ID 0.17 A Drain peak current ID(pulse)*1 0.3 A Channel dissipation Pch*2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. PW ≤ 10ms, duty cycle ≤ 50 % 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltege drain current IDSS — — 10 µA VDS = 10 V, VGS = 0 Gate to source leak current IGSS — — ±5.0 µA VGS = ±6V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.3 — 1.0 V ID = 1mA, VDS = 5V Input capacitance — 9.5 — pF VGS = 2V, VDS = 0 Ciss f = 1MHz Output capacitance Coss — 4.5 — pF VDS = 5, VGS = o f = 1MHz Output Power Pout 24 — — dBm VDS = 4.7V f =836.5MHz Pin = 13dBm Drain Rational ηD 40 — — % VDS = 4.7V f =836.5MHz Pin = 13dBm Note: 3. Marking is “ DX “. 2SK2795 Main Characteristics Typical Output Characteristics 1.0 2.0 I D (A) 1.5 1.0 Drain Current Channel Power Dissipation Pch (W) Maximum Channel Power Dissipation Curve 0.5 50 100 150 Case Temperature Tc (°C) V DS = 5 V Pulse Test 0.16 0.12 0.08 Tc = –25°C 75°C 25°C Forward Transfer Admittance |y fs | (S) 0.20 (A) 3V 0.6 2.5 V 0.4 2V 1.5 V 0.2 0 200 Typical Transfer Characteristics ID 3.5 V Pulse Test 0 Drain Current 6V 5V 0.8 4.5 V 4V 1 2 3 4 5 6 1 Drain to Source Voltage V DS (V) Forward Transfer Admittance vs. Drain Current 0.5 0.2 25°C Tc = –25°C 0.1 75°C 0.05 0.04 0.02 V DS = 5 V Pulse Test 0.01 0 0.4 0.8 1.2 Gate to Source Voltage 1.6 V GS (V) 2.0 V GS = 1 V 0.001 0.003 0.01 0.3 0.1 Drain Current I D (A) 0.3 1 Drain to Source Saturation Voltage vs. Drain Current 10 Gate to Source Cutoff Voltage vs. Ambient Temperature 1.0 Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Saturation Voltage VDS(sat) (V) 2SK2795 3 25°C 1 75°C 0.3 0.1 Tc = –25°C 0.03 V DS = 6 V Pulse Test 0.01 1 3 10 30 100 300 0.8 0.6 ID= 0.4 Input Capacitance vs. Gate to Source Voltage 0 25 50 75 100 125 Output Capacitance vs. Drain to Source Voltage 10 100 9 8 7 V DS = 0 f = 1 MHz –2 0 2 4 6 –4 Gate to Source Voltage VGS (V) Output Capacitance Coss (pF) Input Capacitance Ciss (pF) V DS = 5 V Ambient Temperature Ta (°C) Drain Current I D (mA) 6 –6 1 mA 0.1 m A 0.2 0 –25 1000 10 mA V GS = 0 f = 1 MHz 50 20 10 5 2 1 0.1 0.2 0.5 1 2 Drain to Source V DS (V) 5 10 Output Power, Drain Rational vs. Input Power 100 50 20 10 5 2 1 0.1 100 500 V GS = 0 f = 1 MHz 0.2 0.5 1 2 Gate to Source VoltegeGSV 5 (V) 10 Po 400 80 ηD 300 60 40 200 V DS = 4.7 V I DO = 50 mA f = 836.5MHz 100 0 Drain Rational η D (%) Reverse Transfer Capacitance vs. Gate to Source Votage Output Power Po (mW) Reverse Transfer Capacitance Crss (pF) 2SK2795 10 20 30 40 Input power Pin (mW) 20 0 50 2SK2795 Package Dimensions Unit: mm 4.5 ± 0.1 φ 1.0 0.53 max 0.48 max 1 2 1.5 1.5 3.0 3 0.8 min 4 1.5 ± 0.1 0.44 max 2.5 ± 0.1 4.25 max 0.4 1.8 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 —