HITACHI 2SK2795

2SK2795
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-466 A (Z)
2nd. Edition
November. 1996
Features
•
•
High power output, High gain, High effeciency
PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz)
Compact package capable of surface mounting
Outline
UPAK
3
2
1
4
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
2SK2795
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
10
V
Gate to source voltage
VGSS
±6
V
Drain current
ID
0.17
A
Drain peak current
ID(pulse)*1
0.3
A
Channel dissipation
Pch*2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. PW ≤ 10ms, duty cycle ≤ 50 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltege drain
current
IDSS
—
—
10
µA
VDS = 10 V, VGS = 0
Gate to source leak current
IGSS
—
—
±5.0
µA
VGS = ±6V, VDS = 0
Gate to source cutoff voltage VGS(off)
0.3
—
1.0
V
ID = 1mA, VDS = 5V
Input capacitance
—
9.5
—
pF
VGS = 2V, VDS = 0
Ciss
f = 1MHz
Output capacitance
Coss
—
4.5
—
pF
VDS = 5, VGS = o
f = 1MHz
Output Power
Pout
24
—
—
dBm
VDS = 4.7V
f =836.5MHz
Pin = 13dBm
Drain Rational
ηD
40
—
—
%
VDS = 4.7V
f =836.5MHz
Pin = 13dBm
Note:
3. Marking is “ DX “.
2SK2795
Main Characteristics
Typical Output Characteristics
1.0
2.0
I D (A)
1.5
1.0
Drain Current
Channel Power Dissipation
Pch (W)
Maximum Channel Power
Dissipation Curve
0.5
50
100
150
Case Temperature
Tc (°C)
V DS = 5 V
Pulse Test
0.16
0.12
0.08
Tc = –25°C
75°C
25°C
Forward Transfer Admittance |y fs | (S)
0.20
(A)
3V
0.6
2.5 V
0.4
2V
1.5 V
0.2
0
200
Typical Transfer Characteristics
ID
3.5 V
Pulse Test
0
Drain Current
6V
5V
0.8 4.5 V
4V
1
2
3
4
5
6
1
Drain to Source Voltage V DS (V)
Forward Transfer Admittance
vs. Drain Current
0.5
0.2
25°C
Tc = –25°C
0.1
75°C
0.05
0.04
0.02
V DS = 5 V
Pulse Test
0.01
0
0.4
0.8
1.2
Gate to Source Voltage
1.6
V GS (V)
2.0
V GS = 1 V
0.001 0.003
0.01
0.3
0.1
Drain Current I D (A)
0.3
1
Drain to Source Saturation Voltage
vs. Drain Current
10
Gate to Source Cutoff Voltage vs.
Ambient Temperature
1.0
Gate to Source Cutoff Voltage
VGS(off) (V)
Drain to Source Saturation Voltage
VDS(sat) (V)
2SK2795
3
25°C
1
75°C
0.3
0.1
Tc = –25°C
0.03
V DS = 6 V
Pulse Test
0.01
1
3
10
30
100
300
0.8
0.6
ID=
0.4
Input Capacitance vs.
Gate to Source Voltage
0
25
50
75
100
125
Output Capacitance vs.
Drain to Source Voltage
10
100
9
8
7
V DS = 0
f = 1 MHz
–2
0
2
4
6
–4
Gate to Source Voltage VGS (V)
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
V DS = 5 V
Ambient Temperature Ta (°C)
Drain Current I D (mA)
6
–6
1 mA
0.1 m
A
0.2
0
–25
1000
10 mA
V GS = 0
f = 1 MHz
50
20
10
5
2
1
0.1
0.2
0.5
1
2
Drain to Source V DS (V)
5
10
Output Power, Drain Rational
vs. Input Power
100
50
20
10
5
2
1
0.1
100
500
V GS = 0
f = 1 MHz
0.2
0.5
1
2
Gate to Source VoltegeGSV
5
(V)
10
Po
400
80
ηD
300
60
40
200
V DS = 4.7 V
I DO = 50 mA
f = 836.5MHz
100
0
Drain Rational η D (%)
Reverse Transfer Capacitance vs.
Gate to Source Votage
Output Power Po (mW)
Reverse Transfer Capacitance Crss (pF)
2SK2795
10
20
30
40
Input power Pin (mW)
20
0
50
2SK2795
Package Dimensions
Unit: mm
4.5 ± 0.1
φ 1.0
0.53 max
0.48 max
1
2
1.5 1.5
3.0
3
0.8 min
4
1.5 ± 0.1
0.44 max
2.5 ± 0.1
4.25 max
0.4
1.8 max
0.44 max
Hitachi Code
EIAJ
JEDEC
UPAK
SC–62
—