SIDE LOOK PACKAGE PIN PHOTODIODE MID-85A1C Description Package Dimensions The MID-85A1C is a photodiode mounted in special dark Unit: mm ( inches 5.00 (.200) plastic package and suitable for the IRED (940nm) Type. 6.60 (.260) 4.00 (.160) 4.00 (.160) 22.60 TYP. (.890) RADIANT SENSITIVE AREA 16.00 MIN. (.630) Features l High photo sensitivity l Low junction capacitance l High cut -off frequency l Fast switching time 0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) C A Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Power Dissipation Maximum Rating Unit 100 mW o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-85A1C Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Reverse Break Down Voltage IR=0.1mA Ee=0 VR=10V Reverse Dark Current Ee=0 λ=940nm Open Circuit Voltage Ee=0.1mW/cm2 Symbol Min. V(BR)R 30 Typ. Max. Unit V ID 30 VOC 350 nA mV Rise Time VR =10V λ=940nm Tr 50 Fall Time RL=50KΩ Tf 50 IL 9 µA CT 25 pF VR =5V , λ=940nm Light Current Ee=0.1mW/cm2 VR =3V , f=1MHZ Total Capacitance Ee=0 nsec Typical Optical-Electrical Characteristic Curves 100 Capacitance C - pF Dark Current IR - pA 4000 3000 2000 1000 0 5 10 15 40 20 0.01 20 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC, Ee=0 mW/cm2 0.1 1 10 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ, Ee=0mW/cm 1.4 1000 Dark Current IR - nA o 60 0 0 Photocurrent ( Ipamb / Ip 25 C ) 80 1.2 1.0 0.8 0.6 0.4 0.2 0.0 100 10 1 0.1 -30 -10 10 30 50 70 o Ambeint Temperature - C FIG.3 PHOTOCURRENT VS AMBIENT TEMPERATURE 0 20 40 60 80 100 Ambient Temperature - oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE 2 VR=10, Ee=0 mw/cm Unity Opto Technology Co., Ltd. 02/04/2002 MID-85A1C 1000 Ip - µA 100 80 60 Photocurrnet Relative Response Sensitivity Typical Optical-Electrical Characteristic Curves 40 20 10 1 0.1 0 700 800 900 1000 1100 1200 λ Wavelength (nm) FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 0° 10° Relative Sensitivity 100 0.01 0.1 1 10 Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 950 nm 20° 30° 40° 1.0 0.9 50° 60° 70° 80° 90° 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG .7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002