AM0608-020 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The AM0608-020 is an internally-matched, common base silicon bipolar device optimized for pulsed applications in the 600 – 750 MHz frequency range. Housed in the popular IMPAC hermetic metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. Refractory/Gold Metallization Internal Input Matching Metal/Ceramic Hermetic Package POUT = 20 W Min. GP = 9.0 dB Gain IMPORTANT: For the most current data, visit: http://www.advancedpower.com APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Avionics Applications Symbol PDISS IC VCC TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Power Dissipation* (T C ≤ 100°C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature Value 100 2.4 40 250 -65 to +150 Unit W A V °C °C 1.5 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance * Applies only to rated RF amplifier operation AM0608-020 053-7008 Rev - 9-2002 AM0608-020 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) Symbol BVCBO BVEBO BVCER ICES hFE Test Conditions IC = 15 mA IE = 1 mA IC = 15 mA VBE = 0 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω vCE = 35 V IC = 750 mA AM0608-020 Min. Typ. Max. 55 3.5 55 5 20 Units V V V mA DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) Symbol POUT ηc GP Note: Test Conditions f = 600 – 750 MHz f = 600 – 750 MHz f = 600 – 750 MHz PIN = 2.5 W VCC = 35 V PIN = 2.5 W VCC = 35 V PIN = 2.5 W VCC = 35 V AM0608-020 Min. Typ. Max. 20 40 9.0 Units W % dB Pulse width = 10µSec Duty Cycle = 10% ELECTRICALS 053-7008 Rev - 9-2002 AM0608-020 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW PACKAGE DATTA 053-7008 Rev - 9-2002 AM0608-020 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW NOTES 053-7008 Rev - 9-2002