MICROSEMI MS2575

MS2575
RF PRODUCTS
RF & MICROWAVE TRANSISTORS
DIVISION
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
Refractory/Gold
Metallization
Emitter Site Ballasted
∞ :1 VSWR Capability
Low Thermal
Resistance
Input Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
POUT = 35 W Min.
GP = 10.7 dB Gain
Low RF thermal resistance and computerized automatic wire bonding
techniques ensure high reliability and product consistency.
The MS2575 is housed in the IMPAC package with internal input
matching.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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The MS2575 is a medium power Class C transistor designed
specifically for pulsed L-Band avionics applications.
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Avionics Applications
Symbol
PDISS
IC
VCC
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Parameter
Power Dissipation (T C ≤ 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
150
3.0
55
250
-65 to +150
Unit
W
A
V
°C
°C
1.0
°C/W
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
Applies only to rated RF amplifier operation
Note:
Thermal Resistance determined by Infra-Red Scanning of Hot Spot
Junction Temperature at rated RF operating conditions.
PIN CONNECTION
1
MS2575
2
4
3
1. COLLECTOR 3. EMITTER
2. BASE
4. BASE
Copyright  2000
MSC1666.PDF 2001-01-24
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
MS2575
RF PRODUCTS
RF & MICROWAVE TRANSISTORS
DIVISION
P RODUCT P REVIEW
Symbol
BVCBO
BVEBO
BVCER
ICES
hFE
Test Conditions
IC = 10 mA
IE = 1 mA
IC = 10 mA
VBE = 0 V
VCE = 5 V
IE = 0 mA
IC = 0 V
RBE = 10 Ω
vCE = 50 V
IC = 500 mA
Min.
65
3.5
65
MS2575
Typ.
Max.
5
120
15
Units
V
V
V
mA
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STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C)
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C)
Symbol
Test Conditions
POUT
ηc
GP
f = 1025 – 1150 MHz PIN = 3.0 W VCC = 50 V
f = 1025 – 1150 MHz PIN = 3.0 W VCC = 50 V
f = 1025 – 1150 MHz PIN = 3.0 W VCC = 50 V
Note:
Min.
35
10.7
43
MS2575
Typ.
40
11.2
48
Max.
Units
W
%
dB
Pulse width = 10µSec
Duty Cycle = 1%
ELECTRICALS
Copyright  2000
MSC1666.PDF 2001-01-24
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
MS2575
RF PRODUCTS
RF & MICROWAVE TRANSISTORS
DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
PACKAGE STYLE - M115
PACKAGE DATTA
Copyright  2000
MSC1666.PDF 2001-01-24
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 3
MS2575
RF PRODUCTS
RF & MICROWAVE TRANSISTORS
DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
NOTES
Copyright  2000
MSC1666.PDF 2001-01-24
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 4