MICROSEMI MS2215

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2215
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
•
•
•
•
•
•
•
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 150 W MIN. WITH 7.5 dB Gain
DESCRIPTION:
The MS2215 is designed for specialized avionics applications,
including Mode-S, TCAS and JTIDS where power is provided
under pulse formats utilizing short pulse widths and high burst or
overall duty cycles.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation *
(TC ≤
°C)
Device Current *
Collector - Supply Voltage *
Junction Temperature (Pulsed RF Operation)
Storage Temperature *
Value
Unit
300
16.5
35
250
- 65 to + 200
A
V
°C
°C
0.57
° C/W
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance *
* Applies only to rated RF amplifier operation
MSC0921.PDF 9-23-98
MS2215
ELECTRICAL SPECIFICATIONS (Tcase
(Tcase = 25°
25° C)
STATIC
Symbol
BVCBO
BVEBO
BVCES
ICES
hFE
Test Conditions
IC = 60 mA
IE = 10 mA
IC = 100 mA
VCE = 35 V
VCE =
5V
IE = 0 mA
IC = 0 mA
IC = 5 A
Min.
Value
Typ.
Max.
Unit
55
3.5
55
---20
65
-------------
---------25
----
V
V
V
mA
----
Min.
Value
Typ.
Max.
Unit
150
45
7.5
----------
----------
W
%
dB
DYNAMIC
Symbol
POUT
VC
GP
Note:
Test Conditions
f = 960 - 1215 MHz
f = 960 - 1215 MHz
f = 960 - 1215 MHz
PIN = 26.7 W
PIN = 26.7 W
PIN = 26.7 W
VCC = 35 V
VCC = 35 V
VCC = 35 V
Pulse format: 6.4 µ s on 6.6 µ s off, repeat for 3.3 ms, then off for 4.5125 ms.
Duty Cycle: Burst 49.2%, Overall 20.8%
MSC0921.PDF 9-23-98
MS2215
PACKAGE MECHANICAL DATA
MSC0921.PDF 9-23-98