AM82223-018 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS Features • • • • • • 2.2 - 2.3 GHz 24 VOLTS INPUT / OUTPUT MATCHING POUT = 18 W MINIMUM GP = 6.5 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The AM82223-018 is a common base NPN silicon bipolar transistor designed for high gain and efficiency in telemetry applications in the 2.2-2.3 GHz frequency range. The AM82223-018 incorporates internal input and output impedance matching structures along with a rugged, emitter-site ballasted die geometry. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature Value Unit 58.3 3.0 28 200 -65 to +200 W A V °C °C 3.0 °C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7010 Rev - 9-2002 AM82223-018 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVcbo BVebo Icbo HFE Test Conditions IC = 5 mA IE = 1 mA VCB = 24 V VCE = 5 V IE = 0 mA IC = 0 mA IC = 2 A Min. Value Typ. Max. Unit 45 3.5 --30 --------- ----2.0 300 V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 2.2 - 2.3 GHz PIN = 4.0W VCC =24V 18 --- --- W ηc f = 2.2 - 2.3 GHz PIN = 4.0W VCC =24V 40 --- --- % GP f = 2.2 - 2.3 GHz PIN = 4.0W VCC =24V 6.5 --- --- dB 053-7010 Rev - 9-2002 AM82223-018 PACKAGE MECHANICAL DATA 053-7010 Rev - 9-2002