140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1511 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features • • • • • • • 400 MHz 28 VOLTS POUT = 70 WATTS GP = 8.4 dB GAIN MINIMUM EFFICIENCY 60% GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1511 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emitter resistors to achieve VSWR of 10:1 under operating conditions, and is internally input matched to optimize power gain and efficiency over the 225 – 400 MHz band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 60 30 4.0 8.0 220 +200 -65 to +150 V V V A W °C °C 1.25 ° C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case MS1511.PDF 09-12-02 MS1511 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25° C) STATIC Symbol BVCBO BVCEO BVEBO ICBO HFE Test Conditions IC = 50 mA IE = 50 mA IC = 10 mA VCB = 30 V VCE = 5 V IE = 0mA IB = 0 mA IC = 0mA IE = 0 mA IC = 2 A Min. Value Typ. Max. Unit 60 30 4.0 --20 ----------- ------5 80 V V V mA --- Min. Value Typ. Max. Unit DYNAMIC Symbol Test Conditions POUT f = 400 MHz PIN = 10 W VCE = 28 V 70 --- --- W GP f = 400 MHz PIN = 10 W VCE = 28 V 8.4 --- --- dB COB f = 1 MHz VCB = 28 V --- --- 80 pF IMPEDANCE DATA FREQ ZIN(Ω) ZCL(Ω) 225 MHz 1.44 - j0.87 1.70 - j2.6 400 MHz 1.29 + j0.87 3.0 + j0.87 PIN = 10W VCC = 28V MS1511.PDF 09-12-02 MS1511 PACKAGE MECHANICAL DATA MS1511.PDF 09-12-02