MS1508 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • • 400 MHz 28 VOLTS POUT = 125 WATTS GP = 7.0 dB GAIN MINIMUM EFFICIENCY 60% GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1508 is a 28 V Class C gold metallized epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The MS1508 is an internally matched, broadband device optimized for operation within the 225 – 400 MHz frequency range. This device utlizies diffused emitter resistors to achieve 10:1 VSWR load mismatch capability at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 60 33 4.0 15 270 +200 -65 to +150 V V V A W °C °C 0.65 °C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7089 Rev - 10-2002 MS1508 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCBO BVCES BVCEO BVEBO ICBO HFE Test Conditions IC = 100 mA IC = 80 mA IC = 50 mA IE = 20 mA VCB = 30 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 mA Min. Value Typ. Max. Unit 60 60 33 4.0 --20 ------------- --------10 200 V V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 400 MHz PIN = 25 W VCC = 28 W 125 --- --- W GP f = 400 MHz PIN = 25 W VCC = 28 W 7.0 --- --- dB ηC f = 400 MHz PIN = 25 W VCC = 28 W 60 --- --- % IMPEDANCE DATA FREQ ZIN(Ω) ZCL(Ω) 225 MHz 0.5 + j2.5 8.8 – j3.5 400 MHz 1.5 + j1.7 5.0 – j0.0 POUT = 125 W VCC = 28 V 053-7089 Rev - 10-2002 MS1508 PACKAGE MECHANICAL DATA 053-7089 Rev - 10-2002