SD4012 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features • • • • • • • • 400 MHz 28 VOLTS POUT = 3 WATTS GP = 11.7 dB GAIN MINIMUM OVERLAY GEOMETRY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING REFRACTORY/GOLD METALIZATION DESCRIPTION: The SD4012 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The SD4012 can withstand a 30:1 VSWR. Ideal for military communications applications in the 225 – 400 MHz frequency range, the SD4012 provides typically 13 dB gain with 60% collector efficiency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 55 30 3.5 0.7 11 +200 -65 to+150 V V V A W °C °C 16.0 °C/W Thermal Data RTH(J-C) 12-10-2002 Thermal Resistance Junction-case SD4012 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCBO BVEBO BVCES BVCEO ICBO HFE Test Conditions IC = 20 mA IE = 5 mA IC = 20 mA IC = 50 mA VCB = 30 V VCE = 5 V IE = 0mA IC = 0 mA VBE = 0 V IB = 0 mA IE = 0 mA IC = 1 A Min. Value Typ. Max. Unit 55 3.5 55 30 --10 ------------- --------1 150 V V V V mA --- Min. Value Typ. Max. Unit DYNAMIC Symbol Test Conditions POUT f = 400 MHz PIN = 0.2 W VCC = 28 V 3.0 --- --- W ηC f = 400 MHz PIN = 0.2 W VCC = 28 V --- --- --- GP f = 400 MHz PIN = 0.2 W VCC = 28 V 11.7 --- --- % dB VSWR f = 400 MHz PIN = 0.2 W VCC = 28 V --- --- 30:1 W f = 1 MHz VCB = 28V --- --- 6 W COB IMPEDANCE DATA ZIN(Ω) ZCL(Ω) 300 MHz 0.8 – j0.5 33.0 + j57.0 325 MHz 0.9 – j0.2 31.0 + j52.0 350 MHz 1.1 + j.25 28.0 + j49.0 375 MHz 1.5 + j.75 26.0 + j46.0 400 MHz 1.9 + j1.0 23.0 + j45.0 425 MHz 2.5 + j0.7 20.0 + j42.0 450 MHz 3.3 + j0.1 17.0 + j36.0 FREQ POUT = 3 W VCE = 28 V 12-10-2002 SD4012 PACKAGE MECHANICAL DATA 12-10-2002