SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997 ✪ FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE - E C 589 FMMT489 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO MAX. UNIT CONDITIONS. -50 V IC=-100µ A -30 V IC=-10mA* -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-30V Collector -Emitter Cut-Off Current ICES -100 nA VCES=-30V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.35 -0.65 V V V IC=-0.5A, IB=-50mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn-on Voltage VBE(on) -1.1 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 100 100 80 40 Transition Frequency fT 100 Output Capacitance Cobo IC=-1mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* 300 15 MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT549 datasheet 3 - 136