SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP16 ISSUE 3 AUGUST 1995 FEATURES * High VCEO * Low saturation voltage C E COMPLEMENTARY TYPE: BSP19 PARTMARKING DETAIL: BSP16 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg -1 A -0.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. -350 V IC=-100µ A V(BR)CEO -300 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -1 µA VCB=-280V Emitter Cut-Off Current IEBO -20 µA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) - 2.0 -0.5 V V IC=-50mA, IB=-5mA* IC=-30mA, IB=-3mA* Static Forward Current Transfer Ratio hFE 30 Transition Frequency fT 15 Output Capacitance Cobo 120 15 IC=-50mA, VCE=-10V* MHz IC=-10mA, VCE=-10V* f = 30MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 59