ETC WED2ZL64512S-BC

WED2ZL64512S
White Electronic Designs
512K x 64 Synchronous Pipeline NBL SRAM
FEATURES
DESCRIPTION
n Fast clock speed: 166, 150, 133, and 100MHz
The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced
CMOS process. WEDC’s 32Mb Sync SRAM integrate two 512K
x 32 SRAMs into a single BGA package to provide 512K x 64
configuration. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single-clock input
(CLK). The NBL or No Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data
inputs, and all control signals except output enable are synchronized to input clock. Output Enable controls the outputs at any given time and to Asynchronous Input. Write cycles
are internally self-timed and initiated by the rising edge of the
clock input. This feature eliminates complex off-chip write
pulse generation and provides increased timing flexibility for
incoming signals.
n Fast access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
n Fast OE access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
n Seperate +2.5V ± 5% power supplys for core I/O (VDD
+ VDDQ)
n Double Word Write Control
n Clock-controlled and registered addresses, data I/Os
and control signals
n Packaging:
• 119-bump BGA package
n Low capacitive bus loading
NOTE: NBL = No Bus Latency is equivalent to the industry ZBT™ devices.
FIG. 1 PIN CONFIGURATION
(TOP
A
BLOCK DIAGRAM
VIEW)
1
2
3
4
5
6
7
8
9
DQF
DQF
DQF
DQF
NC
DQG
DQG
DQG
DQG
B
DQF
DQF
DQF
DQF
NC
DQG
DQG
DQG
DQG
C
DQE
DQE
DQE
DQE
NC
DQH
DQH
DQH
DQH
D
DQE
DQE
DQE
DQE
NC
DQH
DQH
DQH
DQH
E
NC
NC
NC
VDDQ
VDDQ
VDDQ
NC
NC
NC
F
SA
VDDQ
VDD
VDD
VDD
VDD
VDD
VDDQ
SA
G
SA
CE
VSS
VSS
VSS
VSS
VSS
SA
SA
H
SA
NC
VSS
WE1
VSS
VSS
VSS
SA
SA
J
SA18
CE2
SSCLK
OE
NC
NC
NC
SA 1
SA0
K
SA
CE2
VSS
WE0
VSS
VSS
VSS
SA
SA
L
SA
NC
VSS
VSS
VSS
VSS
VSS
SA
SA
M
SA
VDDQ
VDD
VDD
VDD
VDD
VDD
VDDQ
SA
N
NC
NC
NC
VDDQ
VDDQ
VDDQ
NC
NC
NC
P
DQD
DQD
DQD
DQD
NC
DQA
DQA
DQA
DQA
R
DQD
DQD
DQD
DQD
NC
DQA
DQA
DQA
DQA
T
DQC
DQC
DQC
DQC
NC
DQB
DQ B
DQB
DQB
U
DQC
DQC
DQC
DQC
NC
DQB
DQ B
DQB
DQB
October 2001 Rev. 0
ECO #14597
SA 0 – 18
DQ 0 – 31
DQ 32 – 63
OEB
WEB_LW
CLK
CS2B
CS2
CS1B
A0 – A18
OE
WE
CLK
CS2
CS2
CS1
U1
DQ 0 – 31
512K x 36
A0 – A18
WEB_HW
OE
WE
CLK
CS2
CS2
CS1
U2
DQ 0 – 31
512K x 36
1
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White Electronic Designs
WED2ZL64512S
FUNCTION DESCRIPTION
The WED2ZL64512S is an NBL SSRAM designed to sustain
100% bus bandwidth by eliminating turnaround cycle when
there is transition from Read to Write, or vice versa. All inputs
(with the exception of OE) are synchronized to rising clock
edges.
rising edge of the clock and the data is latched in the output
register. At the second clock edge the data is driven out of
the SRAM. During read operation OE must be driven low for
the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising
edge of the clock. The pipe-lined NBL SSRAM uses a latelate write cycle to utilize 100% of the bandwidth. At the
first rising edge of the clock, WE and address are registered, and the data associated with that address is required
two cycle later.
Output Enable (OE) can be used to disable the output at
any given time. Read operation is initiated when at the rising
edge of the clock, the address presented to the address
inputs are latched in the address register, CKE is driven low,
the write enable input signals WE are driven high. The internal
array is read between the first rising edge and the second
S YNCHRONOUS T RUTH T ABLE
TRUTH TABLES
NOTES:
CEx
WE
OE
CLK
Address Accessed
Operation
H
X
X
á
N/A
Deselect
L
H
L
á
Current Address
Read Cycle
L
H
H
á
N/A
NOP/Dummy Read
X
X
H
á
N/A
Dummy Read
L
L
X
á
Current Address
Write Cycle
L
L
X
á
N/A
NOP/Write Abort
1. X means “Don’t Care.”
2. The rising edge of clock is symbolized by ( á )
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
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October 2001 Rev. 0
ECO #14597
WED2ZL64512S
White Electronic Designs
A
BSOLUTE
VOLTAGE ON VDD SUPPLY RELATIVE TO VSS
VIN (DQX)
VIN (INPUTS)
STORAGE TEMPERATURE (BGA)
SHORT CIRCUIT OUTPUT CURRENT
M AXIMUM R ATINGS *
-0.3V TO +3.6V
-0.3V TO +3.6V
-0.3V TO +3.6V
-55°C TO +125°C
100mA
*Stress greater than those listed under “Absolute Maximum Ratings: may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions greater than those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating condtions for extended
periods may affect reliability.
E L E C T R I C A L C H A R A C T E R I S T I C S (0°C
DESCRIPTION
INPUT HIGH (LOGIC 1) VOLTAGE
INPUT LOW (LOGIC 0) VOLTAGE
INPUT LEAKAGE CURRENT
OUTPUT LEAKAGE CURRENT
OUTPUT HIGH VOLTAGE
OUTPUT LOW VOLTAGE
SUPPLY VOLTAGE
NOTES:
S YMBOL
VIH
VIL
ILI
ILO
VOH
VOL
VDD
£
TA
CONDITIONS
MIN
1.7
-0.3
-5
-5
2.0
--2.375
0V - VIN - VDD
OUTPUT(S) DISABLED, 0V - VIN - VDD
IOH = -1.0mA
IOL = 1.0mA
MAX
VDD +0.3
0.7
5
5
--0.4
2.625
UNITS
V
V
µA
µA
V
V
V
NOTES
1
1
1
1
1
1. All voltages referenced to Vss (GND)
DC C H A R A C T E R I S T I C S
DESCRIPTION
POWER SUPPLY
CURRENT: OPERATING
POWER SUPPLY
CURRENT: STANDBY
CLOCK RUNNING
STANDBY CURRENT
NOTES:
70°C)
£
SYMBOL
IDD
ISB2
ISB4
CONDITIONS
TYP
DEVICE SELECTED; ALL INPUTS £ VIL OR ³ VIH; CYCLE
TIME = TCYC MIN; VDD = MAX; OUTPUT OPEN
DEVICE DESELECTED; VDD = MAX; ALL INPUTS £ VSS + 0.2
OR VDD - 0.2; ALL INPUTS STATIC; CLK FREQUENCY = 0
DEVICE DESELECTED; VDD = MAX; ALL INPUTS
£ VSS + 0.2 OR V DD - 0.2; C YCLE TIME = TCYC MIN
166 150 133 100
MHZ MHZ MHZ MHZ
UNITS
NOTES
650
600
560
500
mA
1, 2
60
60
60
60
mA
2
140
120
100
80
mA
2
30
1. IDD is specified with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading.
2. Typical values are measured at 2.5V, 25°C, and 10ns cycle time.
BGA C APACITANCE
DESCRIPTION
SYMBOL
CONTROL INPUT CAPACITANCE
INPUT/OUTPUT CAPACITANCE (DQ)
ADDRESS CAPACITANCE
CLOCK CAPACITANCE
NOTES:
CL
CO
CA
CCK
CONDITIONS
TA = 25°C; f
TA = 25°C; f
TA = 25°C; f
TA = 25°C; f
= 1MHZ
= 1MHZ
= 1MHZ
= 1MHZ
TYP
MAX
UNITS
NOTES
5
6
5
3
7
8
7
5
pF
pF
pF
pF
1
1
1
1
1. This parameter is sampled.
October 2001 Rev. 0
ECO #14597
3
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WED2ZL64512S
White Electronic Designs
AC C HARACTERISTICS
SYMBOL
PARAMETER
CLOCK TIME
CLOCK ACCESS T IME
OUTPUT ENABLE TO D ATA V ALID
CLOCK H IGH TO O UTPUT L OW -Z
OUTPUT H OLD FROM C LOCK H IGH
OUTPUT E NABLE L OW TO OUTPUT L OW -Z
OUTPUT E NABLE H IGH TO OUTPUT HIGH -Z
CLOCK H IGH TO O UTPUT H IGH -Z
CLOCK HIGH P ULSE W IDTH
CLOCK LOW P ULSE W IDTH
ADDRESS S ETUP TO C LOCK H IGH
CKE SETUP TO C LOCK H IGH
DATA S ETUP TO C LOCK HIGH
WRITE SETUP TO C LOCK H IGH
CHIP SELECT S ETUP TO CLOCK H IGH
ADDRESS H OLD TO C LOCK HIGH
CKE HOLD TO C LOCK H IGH
DATA H OLD TO C LOCK H IGH
WRITE H OLD TO C LOCK H IGH
CHIP SELECT H OLD TO C LOCK H IGH
t CYC
t CD
tOE
t LZC
t OH
tLZOE
tHZOE
t HZC
t CH
tCL
tAS
t CES
tDS
t WS
tCSS
tAH
t CEH
tDH
tWH
tCSH
166MHZ
MIN
MAX
6.0
-3.5
-3.5
1.5
-1.5
-0.0
--3.0
-3.0
2.2
-2.2
-1.5
-1.5
-1.5
-1.5
-1.5
0.5
-0.5
-0.5
-0.5
-0.5
--
150MHZ
MIN
MAX
6.7
-3.8
-3.8
1.5
-1.5
-0.0
--3.0
-3.0
2.5
-2.5
-1.5
-1.5
-1.5
-1.5
-1.5
0.5
-0.5
-0.5
-0.5
-0.5
--
133MHZ
MIN
MAX
7.5
-4.2
-4.2
1.5
-1.5
-0.0
--3.5
-3.5
3.0
-3.0
-1.5
-1.5
-1.5
-1.5
-1.5
0.5
-0.5
-0.5
-0.5
-0.5
--
100MHZ
MIN
MAX
10.0
-5.0
-5.0
1.5
-1.5
-0.0
--3.5
-3.5
3.0
-3.0
-1.5
-1.5
-1.5
-1.5
-1.5
0.5
-0.5
-0.5
-0.5
-0.5
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. All Address inputs must meet the specified setup and hold times for all rising clock (CLK) edges when ADV is sampled low and CEx is sampled valid.
All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip enable must be valid at each rising edge of CLK (when ADV is Low) to remain enabled.
3. A write cycle is defined by WE low having been registered into the device. A Read cycle is defined by WE High.
Both cases must meet setup and hold times.
AC TEST CONDITIONS
(TA = 0
TO
70°C, VDD = 2.5V ± 5%, UNLESS OTHERWISE SPECIFIED)
Parameter
Input Pulse Level
Input Rise and Fall Time (Measured at 20% to 80%)
Input and Output Timing Reference Levels
Output Load
O UTPUT L O A D (B)
(FOR tLZC, tLZOE , tHZOE , AND tHZC )
O UTPUT L OAD (A)
Dout
RL=50
Zo=50
Value
0 to 2.5V
1.0V/ns
1.25V
See Output Load (A)
+2.5V
VL=1.25V
30pF*
1667
Dout
1538
5pF*
*Including Scope and Jig Capacitance
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October 2001 Rev. 0
ECO #14597
White Electronic Designs
FIG. 3
WED2ZL64512S
TIMING WAVEFORM OF READ CYCLE
tCH
tCL
Clock
tAS
tAH
A1
Address
A2
tWS
tWH
tCSS
tCSH
WE0B
WE1B
CEx
OEB
tOE
tHZOE
tLZOE
Q1-1
Data Out
NOTES:
tCD
tOH
Q2-1
WRITE = L means WE = L, and BWx = L
CEx refers to the combination of CE1, CE2 and CE2.
Don't Care
Undefined
October 2001 Rev. 0
ECO #14597
5
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White Electronic Designs
FIG. 4
WED2ZL64512S
TIMING WAVEFORM OF WRITE CYCLE
tCH
tCL
Clock
Address
A2
A1
WE0B
WE1B
CEx
OEB
Data In
D1-1
D2-1
tHZOE
Data Out
Q0-3
NOTES:
Q0-4
WRITE = L means WE = L, and BWx = L
CEx refers to the combination of CE1, CE2 and CE2.
Don't Care
Undefined
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October 2001 Rev. 0
ECO #14597
WED2ZL64512S
White Electronic Designs
FIG. 5
TIMING WAVEFORM OF SINGLE READ/WRITE
tCH
tCL
Clock
Address
A1
A2
A3
A4
Q1
Q3
A5
A6
A8
A7
A9
WE0B
WE1B
CEx
OEB
tOE
tLZOE
Data Out
Q6
Q7
tDH
tDS
Data In
Q4
D2
D5
Don't Care
NOTES:
October 2001 Rev. 0
ECO #14597
WRITE = L means WE = L, and BWx = L
CEx refers to the combination of CE1, CE2 and CE2.
Undefined
7
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com
WED2ZL64512S
White Electronic Designs
FIG. 7
TIMING WAVEFORM OF CE OPERATION
tCH
tCL
Clock
tCYC
Address
A1
A2
A3
A4
A5
WE0B
WE1B
CEx
OEB
tHZC
tOE
tLZOE
Data Out
Q1
tCD
tLZC
Q2
Q4
tDS tDH
Data In
D3
NOTES:
Don't Care
WRITE = L means WE = L, and BWx = L
CEx refers to the combination of CE1, CE2 and CE2.
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com
D5
Undefined
8
October 2001 Rev. 0
ECO #14597
WED2ZL64512S
White Electronic Designs
PACKAGE DIMENSION: 119 BUMP PBGA
1.90 (0.075)
MAX
7.62 (0.300)
TYP
17.00 (0.669) TYP
A
A1
CORNER
B
C
D
E
F
1.27 (0.050)
TYP
G
H
20.32 (0.800)
TYP
23.00 (0.905)
TYP
J
K
L
M
N
P
R
T
U
0.711 (0.028)
MAX
1.27 (0.050) TYP
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTE: Ball attach pad for above BGA package is 620 microns in diameter. Pad is solder mask defined.
ORDERING INFORMATION
C OMMERCIAL T EMP R ANGE (0°C TO 70°C)
Part
Number
Configuration tCD
Clock
(ns)
(MHz)
WED2ZL64512S35BC512K x 64
3.5
166
WED2ZL64512S38BC512K x 64
3.8
150
WED2ZL64512S42BC512K x 64
4.2
133
WED2ZL64512S50BC512K x 64
5.0
100
October 2001 Rev. 0
ECO #14597
9
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