WED2ZL361MV White Electronic Designs 1Mx36 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION n Fast clock speed: 166, 150, 133, and 100MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The NBL or No Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low. Asynchronous inputs include the sleep mode enable (ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals. n Fast access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns n Fast OE access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns n Single +3.3V ± 5% power supply (VDD) n Snooze Mode for reduced-standby power n Individual Byte Write control n Clock-controlled and registered addresses, data I/Os and control signals n Burst control (interleaved or linear burst) n Packaging: 119-bump BGA package n Low capacitive bus loading FIG. 1 PIN CONFIGURATION BLOCK DIAGRAM (TOP VIEW) 3 4 5 6 7 SA SA SA SA VDD B SA CE 2 SA ADV SA CE 2 NC C NC SA SA VDD SA SA NC D DQ C DQP C V SS NC V SS DQP B DQ B E DQ C DQ C V SS CE 1 V SS DQ B DQ B F VDD DQ C V SS OE V SS DQ B VDD G DQ C DQ C BW C SA BW B DQ B DQ B H DQ C DQ C V SS WE V SS DQ B DQ B J VDD VDD NC VDD NC VDD VDD K DQ D DQ D V SS CLK V SS DQ A DQ A L DQ D DQ D BW D NC BW A DQ A DQ A M VDD DQ D V SS CKE V SS DQ A VDD N DQ D DQ D V SS SA 1 V SS DQ A DQ A P DQ D DQP D V SS SA 0 V SS DQP A DQ A R NC SA LBO VDD NC SA NC T NC NC SA SA SA NC ZZ U VDD NC NC NC NC NC VDD December 2002 Rev. 2 ECO #15834 BWa BWb 2 SA BWc BWd 1 VDD A 1M x 18 CLK CKE ADV LBO CE1 CE2 CE2 OE WE ZZ 1M x 18 CLK CKE ADV LBO CS1 CS2 CS2 OE WE ZZ CLK CKE ADV LBO CS1 CS2 CS2 OE WE ZZ Address Bus (SA0 SA19) - DQc, DQd DQPc, DQPd DQa, DQb DQPa, DQPb DQa DQPa 1 - DQd - DQPd White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED2ZL361MV White Electronic Designs FUNCTION DESCRIPTION The WED2ZL361MV is an NBL SSRAM designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from Read to Write, or vice versa. All inputs (with the exception of OE, LBO and ZZ) are synchronized to rising clock edges. Write operation occurs when WE is driven low at the rising edge of the clock. BW[d:a] can be used for byte write operation. The pipe-lined NBL SSRAM uses a late-late write cycle to utilize 100% of the bandwidth. At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required two cycle later. All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next operation. Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is provided by the external address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected. And when this pin is high, Interleaved burst sequence is selected. Clock Enable (CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous inputs are ignored and the internal device registers will hold their previous values. NBL SSRAM latches external address and initiates a cycle when CKE and ADV are driven low at the rising edge of the clock. During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates after 2 cycles of wake up time. Output Enable (OE) can be used to disable the output at any given time. Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the address register, CKE is driven low, the write enable input signals WE are driven high, and ADV driven low. The internal array is read between the first rising edge and the second rising edge of the clock and the data is latched in the output register. At the second clock edge the data is driven out of the SRAM. During read operation OE must be driven low for the device to drive out the requested data. BURST SEQUENCE TABLE (Linear Burst, LBO = Low) (Interleaved Burst, LBO = High) LBO Pin High First Address Fourth Address Case 1 A1 A0 0 0 0 1 1 0 1 1 Case 2 A1 A0 0 1 0 0 1 1 1 0 Case 3 A1 A0 1 0 1 1 0 0 0 1 Case 4 A1 A0 1 1 1 0 0 1 0 0 LBO Pin High First Address Fourth Address NOTE 1: LBO pin must be tied to High or Low, and Floating State must not be allowed. White Electronic Designs Corporation Westborough MA (508) 366-5151 2 Case 1 A1 A0 0 0 0 1 1 0 1 1 Case 2 A1 A0 0 1 1 0 1 1 0 0 Case 3 A1 A0 1 0 1 1 0 0 0 1 Case 4 A1 A0 1 1 0 0 0 1 1 0 WED2ZL361MV White Electronic Designs TRUTH TABLES SYNCHRONOUS TRUTH TABLE CEx ADV WE BWx OE CKE Address Accessed Operation H L X X X L CLK N/A Deselect X H X X X L N/A Continue Deselect L L H X L L External Address Begin Burst Read Cycle X H X X L L Next Address Continue Burst Read Cycle L L H X H L External Address NOP/Dummy Read X H X X H L Next Address Dummy Read L L L L X L External Address Begin Burst Write Cycle X H X L X L Next Address Continue Burst Write Cycle L L L H X L N/A NOP/Write Abort X H X H X L Next Address Write Abort X X X X X H Current Address Ignore Clock NOTES: 1. X means Dont Care. 2. The rising edge of clock is symbolized by ( ) 3. A continue deselect cycle can only be entered if a deselect cycle is executed first. 4. WRITE = L means Write operation in WRITE TRUTH TABLE. WRITE = H means Read operation in WRITE TRUTH TABLE. 5. Operation finally depends on status of asynchronous input pins (ZZ and OE). 6. CEx refers to the combination of CE1, CE2 and CE2. WRITE TRUTH TABLE WE BWa BWb BWc BWd H X X X X Operation Read L L H H H Write Byte a L H L H H Write Byte b L H H L H Write Byte c L H H H L Write Byte d L L L L L Write All Bytes L H H H H Write Abort/NOP NOTES: 1. X means Dont Care. 2. All inputs in this table must meet setup and hold time around the rising edge of CLK ( ). 3 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED2ZL361MV White Electronic Designs A BSOLUTE MAXIMUM RATINGS* Voltage on VDD Supply Relative to VSS VIN (DQx) VIN (Inputs) Storage Temperature (BGA) Short Circuit Output Current -0.3V to +4.6V -0.3V to +4.6V -0.3V to +4.6V -65°C to +150°C 100mA *Stress greater than those listed under Absolute Maximum Ratings: may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS VOLTAGE REFERENCED TO: VSS = 0V, TA = 0°C TO +70°C; COMMERCIAL OR TA = -40°C TO +85°C; INDUSTRIAL Description Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage Symbol Conditions VIH V IL ILI 0V £ VIN £ VDD ILO Output(s) Disabled, 0V £ VIN £ VDD VOH IOH = -4.0mA VOL IOL = 8.0mA VDD Min 2.0 -0.3 -5 -5 2.4 3.135 Max VDD +0.5 0.8 5 5 0.4 3.465 Units V V µA µA V V V Notes 1 1 2 1 1 1 NOTES: 1. All voltages referenced to VSS (GND) 2. ZZ pin has an internal pull-up, and input leakage = ± 10µA. DC CHARACTERISTICS Description Symbol Conditions 166 MHz 150 MHz 133 MHz 100 MHz 840 800 760 640 mA 1, 2 30 60 60 60 60 mA 2 30 60 60 60 60 mA 2 240 220 180 160 mA 2 Typ Power Supply Current: Operating I DD Device Selected; All Inputs £ VIL or ³ VIH; Cycle Time = TCYC MIN; VDD = MAX; Output Open Power Supply Current: Standby I SB 2 Device Deselected; VDD = MAX; All Inputs£ VSS + 0.2 or VDD - 0.2; All Inputs Static; CLK Frequency = 0; Power Supply Current: Current I SB 3 Clock Running I SB 4 Units Notes ZZ £ VIL Standby Current Device Selected; All Inputs £ VIL or ³ VIH; Cycle Time = TCYC MIN; VDD = MAX; Output Open; ZZ ³ VDD - 0.2V Device Deselected; VDD = MAX; All Inputs £ VSS + 0.2 or VDD - 0.2; Cycle Time = TCYC MIN; ZZ £ VIL NOTES: 1. IDD is specified with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading. 2. Typical values are measured at 3.3V, 25°C, and 10ns cycle time. BGA CAPACITANCE Description Control Input Capacitance Input/Output Capacitance (DQ) Address Capacitance Clock Capacitance Symbol CI CO CA CCK Conditions TA = 25°C; f = 1MHz TA = 25°C; f = 1MHz TA = 25°C; f = 1MHz TA = 25°C; f = 1MHz NOTES: 1. This parameter is sampled. White Electronic Designs Corporation Westborough MA (508) 366-5151 4 Typ 5 6 5 3 Max 7 8 7 5 Units pF pF pF pF Notes 1 1 1 1 WED2ZL361MV White Electronic Designs AC CHARACTERISTICS Symbol 166MHz Parameter Min Clock Time Max 150MHz Min Max Max 7.5 100MHz Min Max 10.0 Units tCYC 6.0 Clock Access Time t CD -- 3.5 -- 3.8 -- 4.2 -- 5.0 Output enable to Data Valid t OE -- 3.5 -- 3.8 -- 4.2 -- 5.0 ns Clock High to Output Low-Z t LZC 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns Output Hold from Clock High 6.7 133MHz Min ns ns t OH 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns Output Enable Low to output Low-Z t LZOE 0.0 -- 0.0 -- 0.0 -- 0.0 -- ns Output Enable High to Output High-Z t HZOE -- 3.0 -- 3.0 -- 3.5 -- 3.5 ns Clock High to Output High-Z t HZC -- 3.0 -- 3.0 -- 3.5 -- 3.5 ns Clock High Pulse Width t CH 2.2 -- 2.5 -- 3.0 -- 3.0 -- ns Clock Low Pulse Width t CL 2.2 -- 2.5 -- 3.0 -- 3.0 -- ns Address Setup to Clock High tAS 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns CKE Setup to Clock High tCES 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns Data Setup to Clock High t DS 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns Write Setup to Clock High tWS 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns Address Advance to Clock High tADVS 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns Chip Select Setup to Clock High tCSS 1.5 -- 1.5 -- 1.5 -- 1.5 -- ns t AH 0.5 -- 0.5 -- 0.5 -- 0.5 -- ns CKE Hold to Clock High tCEH 0.5 -- 0.5 -- 0.5 -- 0.5 -- ns Data Hold to Clock High t DH 0.5 -- 0.5 -- 0.5 -- 0.5 -- ns Write Hold to Clock High t WH 0.5 -- 0.5 -- 0.5 -- 0.5 -- ns Address Advance to Clock High tADVH 0.5 -- 0.5 -- 0.5 -- 0.5 -- ns Chip Select Hold to Clock High tCSH 0.5 -- 0.5 -- 0.5 -- 0.5 -- ns Address Hold to Clock high NOTES: 1. All Address inputs must meet the specified setup and hold times for all rising clock (CLK) edges when ADV is sampled low and CEx is sampled valid. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 2. Chip enable must be valid at each rising edge of CLK (when ADV is Low) to remain enabled. 3. A write cycle is defined by WE low having been registered into the device at ADV Low. A Read cycle is defined by WE High with ADV Low. Both cases must meet setup and hold times. AC TEST CONDITIONS TA = 0°C TO +70°C, VDD = 3.3V ± 5%; COMMERCIAL OR TA = -40°C TO +85°C, VDD = 3.3V ± 5%; INDUSTRIAL Parameter Input Pulse Level Input Rise and Fall Time (Measured at 20% to 80%) Input and Output Timing Reference Levels Output Load OUTPUT LOAD (A) Value 0 to 3.0V 1.0V/ns 1.5V See Output Load (A) OUTPUT LOAD (B) (FOR tLZC, tLZOE, tHZOE, AND tHZC) +3.3V Dout RL=50Ω VL=1.5V Zo=50Ω 3.9 Ω Dout 30pF* 353 Ω 5pF* *Including Scope and Jig Capacitance 5 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED2ZL361MV White Electronic Designs SNOOZE MODE When ZZ becomes a logic HIGH, ISB2Z is guaranteed after the setup time tZZ is met. Any READ or WRITE operation pending when the device enters SNOOZE MODE is not guaranteed to complete successfully. Therefore, SNOOZE MODE must not be initiated until valid pending operations are completed. SNOOZE MODE is a low-current, power-down mode in which the device is deselected and current is reduced to ISB2Z. The duration of SNOOZE MODE is dictated by the length of time Z is in a HIGH state. After the device enters SNOOZE MODE, all inputs except ZZ become gated inputs and are ignored. ZZ is an asynchronous, active HIGH input that causes the device to enter SNOOZE MODE. SNOOZE MODE Description Current during SNOOZE MODE ZZ active to input ignored ZZ inactive to input sampled ZZ active to snooze current ZZ inactive to exit snooze current Conditions ZZ ³ V IH Symbol ISB2Z tZZ tRZZ tZZI tRZZI Min Max 10 2(t KC ) 2(t KC ) 2(t KC ) Units mA ns ns ns ns FIG. 2 SNOOZE MODE TIMING DIAGRAM CLOCK t ZZ t RZZ ZZ t ZZI ISUPPLY t RZZI I ISB2Z ALL INPUTS (except ZZ) Output (Q) DESELECT or READ Only HIGH-Z DON’T CARE White Electronic Designs Corporation Westborough MA (508) 366-5151 6 Notes 1 1 1 1 WED2ZL361MV White Electronic Designs FIG. 3 TIMING WAVEFORM OF READ CYCLE tCH tCL Clock tAS tAH A1 Address A2 tWS tWH tCSS tCSH tADVS tADVH A3 WRITE CEx ADV OE tOE tHZOE tLZOE Q1-1 Data Out NOTES: tCD tOH Q2-1 tHZC Q2-2 Q2-3 Q2-4 Q3-1 Q3-2 Q3-3 Q3-4 Don’t Care WRITE = L means WE = L, and BWx = L CEx refers to the combination of CE1, CE2 and CE2. Undefined 7 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED2ZL361MV White Electronic Designs FIG. 4 TIMING WAVEFORM OF WRITE CYCLE tCH tCL Clock Address A2 A1 A3 WRITE CEx ADV OE tDS Data In D1-1 D2-1 D2-2 D2-3 D2-4 D3-1 tDH D3-2 D3-3 D3-4 tHZOE Data Out Q0-3 NOTES: Q0-4 Don’t Care WRITE = L means WE = L, and BWx = L CEx refers to the combination of CE1, CE2 and CE2. White Electronic Designs Corporation Westborough MA (508) 366-5151 Undefined 8 WED2ZL361MV White Electronic Designs FIG. 5 TIMING WAVEFORM OF SINGLE READ/WRITE tCH tCL Clock Address A1 A2 A3 A4 Q1 Q3 A5 A6 A8 A7 A9 WRITE CEx ADV OE tOE tLZOE Data Out Q6 Q7 tDH tDS Data In Q4 D2 D5 Don’t Care NOTES: WRITE = L means WE = L, and BWx = L CEx refers to the combination of CE1, CE2 and CE2. Undefined 9 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED2ZL361MV White Electronic Designs FIG. 6 TIMING WAVEFORM OF CKE OPERATION tCL tCH Clock tCES tCEH tCYC CKE Address A1 A2 A3 A4 A5 A6 WRITE CEx ADV OE tCD tLZC Data Out tHZC Q1 Q3 tDH tDS Data In Q4 D2 NOTES: Don’t Care WRITE = L means WE = L, and BWx = L CEx refers to the combination of CE1, CE2 and CE2. White Electronic Designs Corporation Westborough MA (508) 366-5151 Undefined 10 WED2ZL361MV White Electronic Designs FIG. 7 TIMING WAVEFORM OF CE OPERATION tCH tCL Clock tCYC Address A1 A2 A3 A4 A5 WRITE CEx ADV OE tHZC tOE tLZOE Data Out Q1 tCD tLZC Q2 Q4 tDS tDH Data In D3 NOTES: D5 Don’t Care WRITE = L means WE = L, and BWx = L CEx refers to the combination of CE1, CE2 and CE2. Undefined 11 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED2ZL361MV White Electronic Designs PACKAGE DIMENSION: 119 BUMP PBGA 1.90 (0.075) MAX 7.62 (0.300) TYP 17.00 (0.669) TYP A A1 CORNER B C D E F 1.27 (0.050) TYP G H 20.32 (0.800) TYP 23.00 (0.905) TYP J K L M N P R T U 0.711 (0.028) MAX 1.27 (0.050) TYP ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES NOTE: Ball attach pad for above BGA package is 620 microns in diameter. Pad is solder mask defined. ORDERING INFORMATION COMMERCIAL TEMP RANGE (0°C TO 70°C) Part Number WED2ZL361MV35BC WED2ZL361MV38BC WED2ZL361MV42BC WED2ZL361MV50BC Configuration 1M 1M 1M 1M x x x x 36 36 36 36 tCD (ns) 3.5 3.8 4.2 5.0 Clock (MHz) 166 150 133 100 INDUSTRIAL TEMP RANGE (-40°C TO +85°C) Part Number WED2ZL361MV35BCI WED2ZL361MV38BCI WED2ZL361MV42BCI WED2ZL361MV50BCI Configuration 1M 1M 1M 1M x x x x 36 36 36 36 tCD (ns) 3.5 3.8 4.2 5.0 Clock (MHz) 166 150 133 100 White Electronic Designs Corporation Westborough MA (508) 366-5151 12