WEDC WEDPZ512K72S

White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
512K x 72 SYNCHRONOUS PIPELINE BURST ZBL SRAM
FEATURES
DESCRIPTION
Fast clock speed: 150, 133, and 100MHz
Fast access times: 3.8ns, 4.2ns, and 5.0ns
Fast OE# access times: 3.8ns, 4.2ns, and 5.0ns
High performance 3-1-1-1 access rate
The WEDC SyncBurst - SRAM employs high-speed,
low-power CMOS design that is fabricated using an
advanced CMOS process. WEDC’s 32Mb SyncBurst
SRAMs integrate two 512K x 36 SSRAMs into a single
BGA package to provide 512K x 72 configuration. All
synchronous inputs pass through registers controlled by a
positive-edge-triggered single-clock input (CLK). The ZBL
or Zero Bus Latency Memory utilizes all the bandwidth
in any combination of operating cycles. Address, data
inputs, and all control signals except output enable and
linear burst order are synchronized to input clock. Burst
order control must be tied “High or Low.” Asynchronous
inputs include the sleep mode enable (ZZ). Output Enable
controls the outputs at any given time. Write cycles are
internally self-timed and initiated by the rising edge of the
clock input. This feature eliminates complex off-chip write
pulse generation and provides increased timing flexibility
for incoming signals.
2.5V ± 5% power supply
Common data inputs and data outputs
Byte write enable and global write control
Six chip enables for depth expansion and address
pipeline
Internally self-timed write cycle
Burst control pin (interleaved or linear burst
sequence)
Automatic power-down for portable applications
Commercial, industrial and military temperature
ranges
Packaging:
• 152 PBGA package 17 x 23mm
* This product is under development, is not qualified or characterized and is subject to
change without notice.
BENEFITS
30% space savings compared to equivalent TQFP
solution
Reduced part count
24% I/O reduction
Laminate interposer for optimum TCE match
Low Profile
Reduce layer count for board routing
Suitable for hi-reliability applications
User configurable as 1M x 36 or 2M x 18
Upgradable to 1M x 72 (contact factory for
availability)
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2003
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
FUNCTIONAL BLOCK DIAGRAM
512K x 36 SSRAM
A0-18
SA
BWa#
BWa#
BWb#
BWb#
BWc#
BWc#
DQPA
DQPA
BWd#
BWd#
DQA0-7
DQA0-7
WE0#
WE0#
DQPB
DQPB
OE0#
OE0#
DQB0-7
DQB0-7
CLK0#
CLK
DQPC
DQPC
CKE0#
CKE#
DQC0-7
DQC0-7
CS10#
CS1#
DQPD
DQPD
CS20#
CS2#
DQD0-7
DQD0-7
CS20
CS2
ADV0
ADV
LB0#
LB0#
ZZ
ZZ
512K x 36 SSRAM
SA
BWe #
BWa#
BWf #
BWb#
BWg#
BWc#
DQPA
DQPE
BWh#
BWd#
DQA0-7
DQE0-7
WE1#
WE0#
DQPB
DQPF
OE1#
OE0#
DQB0-7
DQF0-7
CLK1#
CLK
DQPC
DQPG
CKE1#
CKE
DQC0-7
DQG0-7
CS113#
CS1#
DQPH
DQPH
CS21#
CS2#
DQD0-7
DQH0-7
CS21#
CS2
ADV1
ADV
LB0#
ZZ
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
PIN CONFIGURATION
(TOP VIEW)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
CKE0#
CLK0
BWA#
BWC#
CS10#
A7
A18
A9
A8
A17
ADV1
CKE1#
CLK1
BWE#
BWG#
CS11#
2
ADV0
WE0#
CS20#
BWB#
BWD#
CS20
DQC0
DQC1
A6
DQF4
DQF5
OE1#
WE1#
CS21#
BWF#
BWH#
CS21
3
OE0#
DQB7
DQC2
DQC3
DQC4
DQC5
DQC7
DQC6
DQF2
DQF3
DQF6
DQF7
DQPF
DQF1
DQF0
DQG0
DQG3
4
DQB2
DQB5
DQPC
VSS
VCCQ
VCCQ
VSS
VCC
VSS
VCC
VCC
VSS
VCCQ
VSS
DQG1
DQG2
DQPG
5
DQB4
DQB3
DQPB
VSS
VCCQ
VCCQ
VCC
VCC
VSS
VCC
VCC
VCCQ
VCCQ
VSS
DQG4
DQG5
DQG6
6
DQB6
DQB0
DQB1
VSS
VCCQ
VSS
VCC
VCC
VSS
VCC
VSS
VSSQ
VCCQ
VSS
DQH1
DQH0
DQG7
7
DNU
DQA7
DQD7
DQD6
DQD5
DQD4
DQD3
DQD2
DQD1
DQD0
DQE6
DQE7
DQE5
DQE4
DQH2
DQH4
DQH3
8
DQA6
DQA3
DQA4
DQA5
DQPD
DNU*
A1
A2
A4
A14
A12
A10
DQE3
DQE2
DQE1
DQH7
DQH5
9
DQA2
DQA1
DQA0
DQPA
ZZ
A0
A3
A5
A16
A15
A13
A11
LBO#
DQE0
DQPE
DQPH
DQH6
NOTES:
DNU means Do Not Use and are reserved for future use.
* Pin F8 reserved for A19 upgrade to 1M x 72.
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
FUNCTION DESCRIPTION
The WEDPZ512K72S-XBX is an ZBL SSRAM designed
to sustain 100% bus bandwidth by eliminating turnaround
cycle when there is transition from Read to Write, or vice
versa. All inputs (with the exception of OE#, LBO# and ZZ)
are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the
ADV input. Subsequent burst addresses can be internally
generated by the burst advance pin (ADV). ADV should
be driven to Low once the device has been deselected in
order to load a new address for next operation.
Clock Enable (CKE#) pin allows the operation of the chip to
be suspended as long as necessary. When CKE# is high,
all synchronous inputs are ignored and the internal device
registers will hold their previous values. NBL SSRAM
latches external address and initiates a cycle when CKE
and ADV are driven low at the rising edge of the clock.
Output Enable (OE#) can be used to disable the output
at any given time. Read operation is initiated when at
the rising edge of the clock, the address presented to
the address inputs are latched in the address register,
CKE# is driven low, the write enable input signals WE#
are driven high, and ADV driven low. The internal array is
read between the first rising edge and the second rising
edge of the clock and the data is latched in the output
register. At the second clock edge the data is driven out
of the SRAM. During read operation OE# must be driven
low for the device to drive out the requested data.
Write operation occurs when WE# is driven low at the
rising edge of the clock. BW#[h:a] can be used for byte
write operation. The pipe-lined ZBL SSRAM uses a latelate write cycle to utilize 100% of the bandwidth. At the first
rising edge of the clock, WE# and address are registered,
and the data associated with that address is required two
cycles later.
Subsequent addresses are generated by ADV High for
the burst access as shown below. The starting point of the
burst seguence is provided by the external address. The
burst address counter wraps around to its initial state upon
completion. The burst sequence is determined by the state
of the LBO# pin. When this pin is low, linear burst sequence
is selected. And when this pin is high, Interleaved burst
sequence is selected.
During normal operation, ZZ must be driven low. When ZZ
is driven high, the SRAM will enter a Power Sleep Mode
after two cycles. At this time, internal state of the SRAM
is preserved. When ZZ returns to low, the SRAM operates
after two cycles of wake up time.
BURST SEQUENCE TABLE
(Interleaved Burst, LBO# = High)
LBO# Pin
High
First Address
Case 1
(Linear Burst, LBO# = Low)
Case 2
Case 3
Case 4
A1
A0
A1
A0
A1
A0
A1
A0
0
0
0
1
1
0
1
1
0
1
0
0
1
1
1
1
0
1
1
0
0
0
LBO# Pin
High
Case 1
Case 2
Case 3
Case 4
A1
A0
A1
A0
A1
A0
A1
A0
0
0
0
1
1
0
1
1
0
0
1
1
0
1
1
0
0
1
1
0
1
1
0
0
0
1
1
1
0
0
0
1
1
0
1
1
1
0
0
1
0
0
Fourth Address
NOTE: LBO pin must be tied to High or Low, and Floating State must not be allowed.
First Address
Fourth Address
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November 2003
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Rev. 6
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WEDPZ512K72S-XBX
PRELIMINARY*
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CE#x
H
X
L
X
L
X
L
X
L
X
X
ADV
L
H
L
H
L
H
L
H
L
H
X
WE#
X
X
H
X
H
X
L
X
L
X
X
BW#x
X
X
X
X
X
X
L
L
H
H
X
OE#
X
X
L
L
H
H
X
X
X
X
X
CKE#
L
L
L
L
L
L
L
L
L
L
H
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
Address Accessed
N/A
N/A
External Address
Next Address
External Address
Next Address
External Address
Next Address
N/A
Next Address
Current Address
Operation
Deselect
Continue Deselect
Begin Burst Read Cycle
Continue Burst Read Cycle
NOP/Dummy Read
Dummy Read
Begin Burst Write Cycle
Continue Burst Write Cycle
NOP/Write Abort
Write Abort
Ignore Clock
NOTES:
1)
X means “Don’t Care.”
2)
The rising edge of clock is symbolized by ( ↑ ).
3)
A continue deselect cycle can only be entered if a deselect cycle is executed first.
4)
WRITE# = L means Write operation in WRITE TRUTH TABLE.
WRITE# = H means Read operation in WRITE TRUTH TABLE.
5)
Operation finally depends on status of asynchronous input pins (ZZ and OE#).
6)
CE#x refers to the combination of CS#1 and CS#2.
WRITE TRUTH TABLE
WE#
H
L
L
L
L
L
L
BW#a
X
L
H
H
H
L
H
BW#b
X
H
L
H
H
L
H
BW#c
X
H
H
L
H
L
H
BW#d
X
H
H
H
L
L
H
Operation
Read
Write Byte a
Write Byte b
Write Byte c
Write Byte d
Write All Bytes
Write Abort/NOP
NOTES:
1)
X means “Don’t Care.”
2)
All inputs in this table must meet setup and hold time around the rising edge of CLK (↑ ).
3)
Replace BW#a with BW#e, BW#b, with BW#f, BW#c with BW#g and BW#d with BW#h for
operation of IC2.
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November 2003
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Rev. 6
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WEDPZ512K72S-XBX
PRELIMINARY*
ABSOLUT MAXIMUM RATINGS*
VIN Voltage or any other pin relative to VSS
-0.3V to +3.6V
Voltage on VCC supply relative to VSS
-0.3V to +3.6V
Storage temperature (BGA)
-55°C to +150°C
* Stress greater than those listed under “Absolute Maximum Ratings: may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condtions for extended
periods may affect reliability.
ELECTRICAL CHARACTERISTICS
(-55°C TA +125°C)
Description
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
Conditions
1.7
VCC +0.3
V
Notes
1
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1
2
Input Leakage Current
IIL
VCC = Max, 0V VIN VCC
-4
+4
µA
Output Leakage Current
ILO
Output(s) Disabled, VOUT = VSS to VCCQ
-2
+2
µA
Output High Voltage
VOH
IOH = -1.0mA
2.0
---
V
1
Output Low Voltage
VOL
IOL = 1.0mA
---
0.4
V
1
Supply Voltage
VCC
2.375
2.625
V
1
2.375
2.625
V
1
150MHz
(Max)
133MHz
(Max)
100MHz
(Max)
Units
Notes
1
I/O Power Supply
VCCQ
NOTES:
1)
All voltages referenced to VSS (GND)
2)
ZZ pin has an internal pull-up and input leakage = ± 20 µA.
DC CHARACTERISTICS
(-55°C TA + 125°C)
Description
Symbol
Conditions
Power Supply
Current: Operating
IDD
Device Selected; All Inputs ≤ VIL or ≥ VIH; Cycle
Time ≥ TCYC MIN; VCC = MAX; Output Open
700
650
600
mA
Power Supply
Current: Standby
ISB2
Device Deselected; VCC = MAX; All Inputs ≤ VIL or ≥ VIH
All Inputs Static; CLK Frequency = MAX
Output Open, ZZ ≥ VCC - 0.2V
120
120
120
mA
Clock Running
Standby Current
ISB
Device Deselected; VCC = MAX; All Inputs
≤ VSS + 0.2 or VCC - 0.2; f = MAX ; ZZ ≤ VIL
180
180
160
mA
NOTE:
IDD is specified with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading.
BGA CAPACITANCE
THERMAL RESISTANCE
(TA = + 25°C, f = 1MHz)
Description
Control Input Capacitance (LBO#, ZZ)
Symbol
Max
Units
Notes
CIC
16
pF
1
Parameter
Thermal Resistance: Die Junction to Ambient
Symbol
Max
Unit
θJA
28.7
°C/W
Control Input Capacitance
CI
8
pF
1
Thermal Resistance: Die Junction to Ball
θJB
16.0
°C/W
Input/Output Capacitance (DQ)
CO
10
pF
1
Thermal Resistance: Die Junction to Case
θJC
7.1
°C/W
Address Capacitance
CA
16
pF
1
6
Clock Capacitance
CCK
NOTE:
1)
This parameter is not tested but guaranteed by design.
pF
1
Note: Refer to Application Note “PBGA Thermal Resistance Corrleation” for further
information regarding WEDC’s thermal modeling.
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
AC CHARACTERISTICS
(-55°C TA +125°C)
Parameter
Symbol
150MHz
Min
133MHz
Max
Min
100MHz
Max
Max
10.0
Units
Clock Time
tCYC
6.7
Clock Access Time
tCD
--
3.8
--
4.2
--
5.0
ns
Output enable to Data Valid
tOE
--
3.8
--
4.2
--
5.0
ns
Clock High to Output Low-Z
tLZC
1.5
--
1.5
--
1.5
--
ns
Output Hold from Clock High
tOH
1.5
--
1.5
--
1.5
--
ns
Output Enable Low to output Low-Z
tLZOE
0.0
--
0.0
--
0.0
--
ns
Output Enable High to Output High-Z
tHZOE
--
3.0
--
3.5
--
3.5
ns
Clock High to Output High-Z
tHZC
--
3.0
--
3.5
--
3.5
ns
Clock High Pulse Width
tCH
2.5
--
2.5
--
3.0
--
ns
Clock Low Pulse Width
tCL
2.5
--
2.5
--
3.0
--
ns
Address Setup to Clock High
tAS
1.5
--
1.5
--
1.5
--
ns
CKE Setup to Clock High
tCES
1.5
--
1.5
--
1.5
--
ns
Data Setup to Clock High
tDS
1.5
--
1.5
--
1.5
--
ns
Write Setup to Clock High
tWS
1.5
--
1.5
--
1.5
--
Address Advance to Clock High
tADVS
1.5
Chip Select Setup to Clock High
tCSS
1.5
Address Hold to Clock high
tAH
0.5
--
0.5
--
0.5
--
ns
CKE Hold to Clock High
tCEH
0.5
--
0.5
--
0.5
--
ns
Data Hold to Clock High
tDH
0.5
--
0.5
--
0.5
--
ns
Write Hold to Clock High
tWH
0.5
--
0.5
--
0.5
--
ns
tADVH
0.5
--
0.5
--
0.5
--
ns
Address Advance to Clock High
7.5
Min
1.5
ns
ns
1.5
1.5
ns
1.5
ns
0.5
-0.5
--0.5
-ns
Chip Select Hold to Clock High
tCSH
NOTES:
1)
All Address inputs must meet the specified setup and hold times for all rising clock (CLK) edges when ADV is sampled low and CS#x is sampled valid.
All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2)
Chip enable must be valid at each rising edge of CLK (when ADV is Low) to remain enabled.
3)
A write cycle is defined by WE# low having been registered into the device at ADV Low. A Read cycle is defined by WE# High with ADV Low. Both
cases must meet setup and hold times.
AC TEST CONDITIONS
Parameter
Value
Input Pulse Level
0 to 2.5V
Input Rise and Fall Time
1.0V/ns
Input and Output Timing Reference Levels
1.25V
Output Load
See Output Load (A & B)
OUTPUT LOAD (A)
OUTPUT LOAD (B)
(for TLZC, TLZOE, THZOE, and THZC)
Dout
RL=50Ω
Zo=50Ω
+2.5V
VL=1.25V
50pF*
1667Ω
Dout
*Including Scope and Jig Capacitance
1538Ω
5pF*
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
SNOOZE MODE
SNOOZE MODE is a low-current, “power-down” mode in
which the device is deselected and current is reduced to
ISB2Z. The duration of SNOOZE MODE is dictated by the
length of time Z is in a HIGH state. After the device enters
SNOOZE MODE, all inputs except ZZ become gated inputs
and are ignored. ZZ is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE.
When ZZ becomes a logic HIGH, ISB2z is guaranteed after
the setup time tZZ is met. Any READ or WRITE operation
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending operations
are completed.
SNOOZE MODE
Description
Conditions
Symbol
ZZ ≥ VIH
ISB2Z
20
mA
ZZ active to input ignored
tZZ
2
cycle
Current during SNOOZE MODE
ZZ inactive to input sampled
tRZZ
ZZ active to snooze current
tZZI
ZZ inactive to exit snooze current
tRZZI
Min
Max
Units
2
cycle
2
cycle
O
ns
SNOOZE MODE TIMING DIAGRAM
CLOCK
t ZZ
t RZZ
ZZ
t ZZI
ISUPPLY
ALL INPUTS
(except ZZ)
t RZZI
I ISB2Z
DESELECT or READ Only
Deselect or Read Only
Normal
Operation Cycle
Output (Q)
HIGH-Z
DON'T CARE
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November 2003
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Rev. 6
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WEDPZ512K72S-XBX
PRELIMINARY*
TIMING WAVEFORM OF READ CYCLE
tCH
tCL
CLKX
tCYC
tCES
tCEH
CKEX#
tAS
tAH
A1
Address
A2
tWS
tWH
tCSS
tCSH
tADVS
tADVH
A3
WRITE#
CSX#
ADVX
OE#
tOE
tHZOE
tLZOE
Q1-1
Data Out
NOTES:
tCD
tOH
Q2-1
tHZC
Q2-2
Q2-3
Q2-4
WRITE# = L means WEx# = L, and BWx# = L
CSx# refers to the combination of CS10#, CS20 and CS20#, or CS11#, CS21 and CS21#.
Q3-1
Q3-2
Q3-3
Q3-4
Don¢t Care
Undefined
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
TIMING WAVEFORM OF WRITE CYCLE
tCH
tCL
CLKX
tCYC
tCES tCEH
CKEX#
Address
A2
A1
A3
WRITE#
CSX#
ADVX
OE#
tDS
Data In
D1-1
D2-1
D2-2
D2-3
D2-4
D3-1
tDH
D3-2
D3-3
D3-4
tHZOE
Data Out
Q0-3
NOTES:
Q0-4
WRITE# = L means WEx# = L, and BWx# = L
CSx# refers to the combination of CS10#, CS20 and CS20#, or CS11#, CS21 and CS21#.
Don’t Care
Undefined
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
TIMING WAVEFORM OF SINGLE READ/WRITE
tCH
tCL
CLKX
tCYC
tCES tCEH
CKEX#
Address
A1
A2
A3
A4
Q1
Q3
A5
A6
A8
A7
A9
WRITE#
CSX#
ADVX
OE#
tOE
tLZOE
Data Out
D2
NOTES:
Q6
Q7
tDH
tDS
Data In
Q4
WRITE# = L means WEx# = L, and BWx# = L
CSx# refers to the combination of CS10#, CS20 and CS20#, or CS11#, CS21 and CS21#.
D5
Don’t Care
Undefined
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November 2003
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Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
TIMING WAVEFORM OF CKE OPERATION
tCL
tCH
CLKX
tCES tCEH
tCYC
CKEX#
Address
A1
A2
A3
A4
A5
A6
WRITE#
CSX#
ADVX
OE#
tCD
tLZC
Data Out
tHZC
Q1
Q3
tDH
tDS
Data In
Q4
D2
NOTES: WRITE# = L means WEx# = L, and BWx# = L
CSx# refers to the combination of CS10#, CS20 and CS20#, or CS11#, CS21 and CS21#.
Don¢t Care
Undefined
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2003
12
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
TIMING WAVEFORM OF CE OPERATION
tCH
tCL
CLKX
tCYC
tCEH
tCES
CKEX#
Address
A1
A2
A3
A4
A5
WRITE#
CSX#
ADVX
OE#
tHZC
tOE
tLZOE
Data Out
Q1
tCD
tLZC
Q4
Q2
tDS tDH
Data In
D3
NOTES: WRITE# = L means WEx# = L, and BWx# = L
CSx# refers to the combination of CS10#, CS20 and CS20#, or CS11#, CS21 and CS21#.
D5
Don’t Care
Undefined
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2003
13
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
PACKAGE DIMENSION:
152 BUMP PBGA
BOTTOM VIEW
9
8
7
6
5
4
3
∅ 0.762 (0.030) NOM
2
1
A
B
C
D
E
F
G
23.1 (0.909)
MAX
20.32 (0.800)
NOM
1.27
(0.050)
NOM
H
J
K
L
M
N
P
R
T
U
1.27 (0.050) NOM
0.61
(0.024)
NOM
10.16 (0.400)
NOM
2.03 (0.080)
MAX
17.1 (0.673)
MAX
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
WED P Z 512K 72 S - XXX B X
DEVICE GRADE:
M = Military
I = Industrial
C
= Commercial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
PACKAGE:
B
= 152 Plastic Ball Grid Array (PBGA)
FREQUENCY (MHz)
100
= 100MHz
133
= 133MHz
150
= 150MHz
2.5V Voltage
CONFIGURATION, 512K x 72
SSRAM ZBL
PLASTIC
WHITE ELECTRONIC DESIGNS CORP.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2003
14
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
Rev. 6
White Electronic Designs
WEDPZ512K72S-XBX
PRELIMINARY*
Document Title
512K x 72 Synchronous SRAM – NBL
Revision History
Rev #
History
Release Date
Status
Rev 0
Rev 1
Initial Release
Changes (Pg. 1, 5, 6, 13)
1.1 Block Diagram: Change DQD to DQPD, Font Consistency
1.2 Electrical Characteristics Note 2: Change reference to mA instead of MA.
1.3 DC Characteristics: Adjust location of Units & Notes for ISB2.
1.4 AC Characteristics: Change temperature range to (-55°C ≤ TA ≤ +125°C)
1.5 Package Dimension: Adjust length line to end of package
1.6 Block Diagram: Adjust look for consistency
1.7 DC Characteristics: ISB2 condition should read All Inputs ≤ VIL or ≥ VIH instead of > VIH
1.8 Figure 2: Inputs transition should not be shown fully connected.
1.9 Figure 6: Unknown text deleted from timing diagram
1.10 Package Dimension: Ball diameter arrow corrected to point to ball.
Change (Pg. 1)
1.1 Change status from Advanced to Preliminary
Changes (Pg. 1, 2)
1.1 Block Diagram: Address lines should be A0-18
1.2 Pin Configuration: Add Note *Pin F8 reserved for A19 upgrade to 1Mx72.
Changes (Pg. 1, 5)
1.1 BGA Capacitance: Remove references to temperature in individual conditions
1.2 Change CI from 10pF to 8pF
1.3 Change CA from 20pF to 16pF
1.4 Change CCK from 7pF to 6pF
1.5 Add Control Input Capacitance (CIC) 16pF
Changes (Pg. 5)
1.1 Add Thermal Resistance table
1.2 Update current values
1.3 Update package mechanical drawing
Changes (Pg. 1, 13, 14, 15)
1.1 Change mechanical drawing to new style
February 2001
April 2001
Advanced
Advanced
November 2001
Preliminary
November 2001
Preliminary
November 2002
Preliminary
May 2003
Preliminary
November 2003
Preliminary
Rev 2
Rev 3
Rev 4
Rev 5
Rev 6
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2003
15
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
Rev. 6