WEDC WED2ZL361MS26BI

WED2ZL361MS
White Electronic Designs
1Mx36 Synchronous Pipeline Burst NBL SRAM
FEATURES

Fast clock speed: 250, 225, 200, 166, 150,
133MHz

Fast access times: 2.6, 2.8, 3.0, 3.5, 3.8, 4.2ns

Fast OE# access times: 2.6, 2.8, 3.0, 3.5, 3.8,
4.2ns

Separate +2.5V ± 5% power supplies for Core, I/O
(VCC, VCCQ)

Snooze Mode for reduced-standby power

Individual Byte Write control

Clock-controlled and registered addresses, data
I/Os and control signals

Burst control (interleaved or linear burst)

Packaging:


DESCRIPTION
The WEDC SyncBurst - SRAM family employs high-speed,
low-power CMOS designs that are fabricated using an
advanced CMOS process. WEDC’s 32Mb SyncBurst
SRAMs integrate two 1M x 18 SRAMs into a single BGA
package to provide 1M x 36 configuration. All synchronous
inputs pass through registers controlled by a positiveedge-triggered single-clock input (CK). The NBL or No
Bus Latency Memory utilizes all the bandwidth in any
combination of operating cycles. Address, data inputs, and
all control signals except output enable and linear burst
order are synchronized to input clock. Burst order control
must be tied “High or Low.” Asynchronous inputs include the
sleep mode enable (ZZ). Output Enable controls the outputs
at any given time. Write cycles are internally self-timed and
initiated by the rising edge of the clock input. This feature
eliminates complex off-chip write pulse generation and
provides increased timing flexibility for incoming signals.
119-bump BGA package
Low capacitive bus loading
NOTE: NBL (No Bus Latency) is equivalent to ZBT™
PIN CONFIGURATION
BLOCK DIAGRAM
2
SA
3
SA
4
SA
5
SA
6
SA
7
VCCQ
B
SA
CE2
SA
ADV#
SA
CE2#
NC
C
NC
SA
SA
VCC
SA
SA
NC
D
DQc
DQPc
VSS
NC
VSS
DQPb
DQb
E
DQc
DQc
VSS
CE1#
VSS
DQb
DQb
F
VCCQ
DQc
VSS
OE#
VSS
DQb
VCCQ
G
DQc
DQc
BWc#
SA
BWb#
DQb
DQb
H
DQc
DQc
VSS
WE#
VSS
DQb
DQb
J
VCCQ
VCC
NC
VCC
NC
VCC
VCCQ
K
DQd
DQd
VSS
CK
VSS
DQa
DQa
L DQd
M VCCQ
N DQd
DQd
BWd#
NC
BWa#
DQa
DQa
DQd
VSS
CKE#
VSS
DQa
VCCQ
DQd
VSS
SA1
VSS
DQa
DQa
P
DQd
DQPd
VSS
SA0
VSS
DQPa
DQa
R
NC
SA
LBO#
VCC
NC
SA
NC
T
NC
NC
SA
SA
SA
NC
ZZ
U
VCCQ
NC
NC
NC
NC
NC
VCCQ
BWa#
BWb#
1
VCCQ
A
BWc#
BWd#
(TOP VIEW)
1M x 18
CK
CKE#
ADV#
LBO#
CE1#
CE2
CE2#
OE#
WE#
ZZ
CK
CKE#
ADV#
LBO#
CS1#
CS2
CS2#
OE#
WE#
ZZ
1M x 18
CK
CKE#
ADV#
LBO#
CS1#
CS2
CS2#
OE#
WE#
ZZ
Address Bus
(SA0 - SA19)
DQc, DQd
DQPc, DQPd
DQa, DQb
DQPa, DQPb
DQa - DQd
DQPa - DQPd
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Oct, 2002
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FUNCTION DESCRIPTION
The WED2ZL361MS is an NBL SSRAM designed to sustain 100% bus bandwidth by eliminating turnaround cycle
when there is transition from Read to Write, or vice versa.
All inputs (with the exception of OE#, LBO# and ZZ) are
synchronized to rising clock edges.
Write operation occurs when WE# is driven low at the rising edge of the clock. BW#[d:a] can be used for byte write
operation. The pipe-lined NBL SSRAM uses a late-late write
cycle to utilize 100% of the bandwidth. At the first rising edge
of the clock, WE# and address are registered, and the data
associated with that address is required two cycle later.
All read, write and deselect cycles are initiated by the
ADV# input. Subsequent burst addresses can be internally
generated by the burst advance pin (ADV#). ADV# should
be driven to Low once the device has been deselected in
order to load a new address for next operation.
Subsequent addresses are generated by ADV# High for
the burst access as shown below. The starting point of the
burst seguence is provided by the external address. The
burst address counter wraps around to its initial state upon
completion. The burst sequence is determined by the state
of the LBO# pin. When this pin is low, linear burst sequence
is selected. And when this pin is high, Interleaved burst
sequence is selected.
Clock Enable (CKE#) pin allows the operation of the chip to
be suspended as long as necessary. When CKE# is high,
all synchronous inputs are ignored and the internal device
registers will hold their previous values. NBL SSRAM
latches external address and initiates a cycle when CKE#
and ADV# are driven low at the rising edge of the clock.
During normal operation, ZZ must be driven low. When ZZ
is driven high, the SRAM will enter a Power Sleep Mode
after 2 cycles. At this time, internal state of the SRAM is
preserved. When ZZ returns to low, the SRAM operates
after 2 cycles of wake up time.
Output Enable (OE#) can be used to disable the output
at any given time. Read operation is initiated when at the
rising edge of the clock, the address presented to the address inputs are latched in the address register, CKE# is
driven low, the write enable input signals WE# are driven
high, and ADV# driven low. The internal array is read
between the first rising edge and the second rising edge
of the clock and the data is latched in the output register.
At the second clock edge the data is driven out of the
SRAM. During read operation OE# must be driven low for
the device to drive out the requested data.
BURST SEQUENCE TABLE
(INTERLEAVED BURST, LBO# = HIGH)
(LINEAR BURST, LBO# = LOW)
LBO# Pin
High
First Address
↓
Fourth Address
Case 1
Case 2
Case 3
Case 4
A1
0
0
1
1
A1
0
0
1
1
A1
1
1
0
0
A1
1
1
0
0
A0
0
1
0
1
A0
1
0
1
0
A0
0
1
0
1
LBO# Pin
A0
1
0
1
0
High
First Address
↓
Fourth Address
Case 1
Case 2
Case 3
Case 4
A1
0
0
1
1
A1
0
1
1
0
A1
1
1
0
0
A1
1
0
0
1
A0
0
1
0
1
A0
1
0
1
0
A0
0
1
0
1
A0
1
0
1
0
NOTE 1: LBO# pin must be tied to High or Low, and Floating State must not be
allowed.
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TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CEx# ADV
H
L
X
H
L
L
X
H
L
L
X
H
L
L
X
H
L
L
X
H
X
X
WE#
X
X
H
X
H
X
L
X
L
X
X
BWx#
X
X
X
X
X
X
L
L
H
H
X
OE#
X
X
L
L
H
H
X
X
X
X
X
CKE#
L
L
L
L
L
L
L
L
L
L
H
CK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
Address Accessed
N/A
N/A
External Address
Next Address
External Address
Next Address
External Address
Next Address
N/A
Next Address
Current Address
Operation
Deselect
Continue Deselect
Begin Burst Read Cycle
Continue Burst Read Cycle
NOP/Dummy Read
Dummy Read
Begin Burst Write Cycle
Continue Burst Write Cycle
NOP/Write Abort
Write Abort
Ignore Clock
NOTES:
1.
X means “Don’t Care.”
2.
The rising edge of clock is symbolized by ( ↑ )
3.
A continue deselect cycle can only be entered if a deselect cycle is executed first.
4.
WRITE# = L means Write operation in WRITE TRUTH TABLE.
WRITE# = H means Read operation in WRITE TRUTH TABLE.
5.
Operation finally depends on status of asynchronous input pins (ZZ and OE#).
6.
CEx# refers to the combination of CE1#, CE2 and CE2#.
WRITE TRUTH TABLE
WE#
H
L
L
L
L
L
L
BWa# BWb# BWc# BWd#
X
X
X
X
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
L
L
L
L
H
H
H
H
Operation
Read
Write Byte a
Write Byte b
Write Byte c
Write Byte d
Write All Bytes
Write Abort/NOP
NOTES:
1.
X means “Don’t Care.”
2.
All inputs in this table must meet setup and hold time around the
rising edge of CK ( ↑ ).
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ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Supply Relative to VSS
-0.3V to +3.6V
Vin (DQx)
-0.3V to +3.6V
Vin (Inputs)
-0.3V to +3.6V
Storage Temperature (BGA)
-55°C to +125°C
Short Circuit Output Current
100mA
*Stress greater than those listed under “Absolute Maximum Ratings: may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = OV, TA = 0°C; Commercial or -40°C ≤ TA ≤ 85°C; Industrial)
Min
Max
Units
Notes
Input High (Logic 1) Voltage
Description
Symbol
VIH
Conditions
1.7
VCC +0.3
V
1
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1
Input Leakage Current
ILI
-5
5
µA
2
Output Leakage Current
ILO
-5
5
µA
Output High Voltage
VOH
2.0
–
V
1
Output Low Voltage
VOL
–
0.4
V
1
Supply Voltage
VCC
2.375
2.625
V
1
0V ≤ VIN ≤ VCC
Output(s) Disabled, 0V ≤ VIN ≤ VCC
IOH = -1.0mA
IOL = 1.0mA
NOTES:
1. All voltages referenced to VSS (GND)
2. ZZ pin has an internal pull-up, and input leakage is higher.
DC CHARACTERISTICS
Description
Symbol
Conditions
IDD
Device Selected; All Inputs � VIL or � VIH; Cycle
Time = TCYC MIN; VCC = MAX; Output Open
Power Supply
Current: Standby
ISB2
Device Deselected; VCC = MAX; All Inputs� VSS + 0.2
or VCC - 0.2; All Inputs Static; CK Frequency = 0;
ZZ � VIL
Power Supply
Current: Current
ISB3
Device Selected; All Inputs � VIL or � VIH; Cycle
Time = TCYC MIN; VCC = MAX; Output Open;
ZZ � VCC - 0.2V
Clock Running
Standby Current
ISB4
Device Deselected; VCC = MAX; All Inputs
� VSS + 0.2 or VCC - 0.2; Cycle Time = TCYC
MIN; ZZ � VIL
Power Supply
Current: Operating
250
MHz
200
MHz
166
MHz
133
MHz
Units
Notes
900
800
690
580
mA
1, 2
30
60
60
60
60
mA
2
20
40
40
40
40
mA
2
150
140
130
100
mA
2
Typ
NOTES:
1.
IDD is specified with no output current and increases with faster cycle times.
IDD increases with faster cycle times and greater output loading.
2.
Typical values are measured at 2.5V, 25°C, and 10ns cycle time.
BGA CAPACITANCE
Description
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
Symbol
CI
CO
CA
CCK
Conditions
TA = 25°C; f = 1MHZ
TA = 25°C; f = 1MHZ
TA = 25°C; f = 1MHZ
TA = 25°C; f = 1MHZ
Typ
5
6
5
3
Max
7
8
7
5
Units
pF
pF
pF
pF
Notes
1
1
1
1
NOTES:
1.
This parameter is sampled.
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AC CHARACTERISTICS
Parameter
Symbol
250MHz
Min
Max
225MHz
Min
Max
4.4
200MHz
Min
Max
5.0
166MHz
Min
150MHz
Max
6.0
Min
133MHz
Max
Min
6.7
Max
7.5
Units
Clock Time
tCYC
4.0
Clock Access Time
tCD
--
2.6
--
2.8
--
3.0
--
3.5
--
3.8
--
4.2
ns
ns
Output enable to Data Valid
tOE
--
2.6
--
2.8
--
3.0
--
3.5
--
3.8
--
4.2
ns
Clock High to Output Low-Z
tLZC
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
ns
Output Hold from Clock High
tOH
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
ns
Output Enable Low to output Low-Z
tLZOE
0.0
--
0.0
--
0.0
--
0.0
--
0.0
--
0.0
--
ns
Output Enable High to Output High-Z
tHZOE
--
2.6
--
2.8
--
3.0
--
3.0
--
3.0
--
3.5
ns
Clock High to Output High-Z
tHZC
--
2.6
--
2.8
--
3.0
--
3.0
--
3.0
--
3.5
ns
Clock High Pulse Width
tCH
1.7
--
2.0
--
2.0
--
2.2
--
2.2
--
2.2
--
ns
Clock Low Pulse Width
tCL
1.7
--
2.0
--
2.0
--
2.2
--
2.2
--
2.2
--
ns
Address Setup to Clock High
tAS
1.2
--
1.4
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
CKE Setup to Clock High
tCES
1.2
--
1.4
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
Data Setup to Clock High
tDS
1.2
--
1.4
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
Write Setup to Clock High
tWS
1.2
--
1.4
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
Address Advance to Clock High
tADVS
1.2
--
1.4
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
Chip Select Setup to Clock High
tCSS
1.2
--
1.4
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
Address Hold to Clock high
tAH
0.3
--
0.4
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
CKE Hold to Clock High
tCEH
0.3
--
0.4
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
Data Hold to Clock High
tDH
0.3
--
0.4
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
Write Hold to Clock High
tWH
0.3
--
0.4
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
Address Advance to Clock High
tADVH
0.3
--
0.4
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
Chip Select Hold to Clock High
tCSH
0.3
--
0.4
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
ZZ High to Power Down
tPDS
2
--
2
--
2
--
2
--
2
--
2
--
cycle
ZZ Low to Power Up
tPUS
2
--
2
--
2
--
2
--
2
--
2
--
cycle
NOTES:
1. All Address inputs must meet the specified setup and hold times for all rising clock (CK) edges when ADV is sampled low and CEx# is sampled valid. All other
synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip enable must be valid at each rising edge of CK (when ADV is Low) to remain enabled.
3. A write cycle is defined by WE# low having been registered into the device at ADV Low. A Read cycle is defined by WE# High with ADV Low. Both cases must
meet setup and hold times.
AC TEST CONDITIONS
(0 ≤ TA ≤ 70°C, VCC = 2.5V ± 5%; Commercial or -40°C ≤ Ta ≤ 85°C; VCC = 2.5V ± 5%; Industrial)
Parameter
Value
Input Pulse Level
0 to 2.5V
Input Rise and Fall Time (Measured at 20% to 80%)
1.0V/ns
Input and Output Timing Reference Levels
1.25V
Output Load
See Output Load (A)
OUTPUT LOAD (A)
Dout
OUTPUT LOAD (B)
(for tLZC, tLZOE, tHZOE, and tHZC)
RL=50Ω
VL=1.25V
Zo=50Ω
+2.5V
30pF*
1667Ω
Dout
1538Ω
5pF*
*Including Scope and Jig Capacitance
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Oct, 2002
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SNOOZE MODE
When ZZ becomes a logic HIGH, ISB2Z is guaranteed after
the setup time tZZ is met. Any READ or WRITE operation
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending operations
are completed.
SNOOZE MODE is a low-current, “power-down” mode
in which the device is deselected and current is reduced
to ISB2Z. The duration of SNOOZE MODE is dictated by
the length of time Z is in a HIGH state. After the device
enters SNOOZE MODE, all inputs except ZZ become
gated inputs and are ignored. ZZ is an asynchronous, active HIGH input that causes the device to enter SNOOZE
MODE.
SNOOZE MODE
Description
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
Conditions
ZZ ≥ VIH
Symbol
ISB2Z
tZZ
tRZZ
tZZI
tRZZI
Min
Max
10
2(tKC)
2(tKC)
2(tKC)
Units
mA
ns
ns
ns
ns
Notes
1
1
1
1
FIG 1 SNOOZE MODE TIMING DIAGRAM
CLOCK
t ZZ
t RZZ
ZZ
t ZZI
ISUPPLY
t RZZI
I ISB2Z
ALL INPUTS
(except ZZ)
Output (Q)
DESELECT or READ Only
HIGH-Z
DON'T CARE
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FIG 2 TIMING WAVEFORM OF READ CYCLE
tCH tCL
Clock
tCES
tCYC
tCEH
CKE#
tAH
tAS
A1
Address
A2
tWS
tWH
tCSS
tCSH
tADVS
tADVH
A3
WRITE#
CEx#
ADV
OE#
tOE
tLZOE
Data Out
NOTES:
tHZOE
Q1-1
tCD
tOH
Q2-1
tHZC
Q2-2
Q2-3
Q2-4
Q3-1
Q3-2
Q3-3
Q3-4
Dont Care
Undefined
WRITE# = L means WE# = L, and BWx# = L
CEx# refers to the combination of CE1#, CE2 and CE2#.
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FIG 3 TIMING WAVEFORM OF WRITE CYCLE
tCH tCL
Clock
tCYC
tCSS tCSH
CKE#
Address
A3
A2
A1
WRITE#
CEx#
ADV
OE#
tDS
Data In
D1-1
D2-1
D2-2
D2-3
D2-4
D3-1
tDH
D3-2
D3-3
D3-4
tHZOE
Data Out
Q0-3
NOTES:
Q0-4
Dont Care
Undefined
WRITE# = L means WE# = L, and BWx# = L
CEx# refers to the combination of CE1#, CE2 and CE2#.
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FIG. 4 TIMING WAVEFORM OF SINGLE READ/WRITE
tCH tCL
Clock
tCYC
tCES tCEH
CKE#
Address
A1
A2
A3
A4
Q1
Q2
A5
A6
A7
A8
A9
WRITE#
CEx#
ADV
OE#
tOE
tLZOE
Data In
D2
NOTES:
Q6
Q7
tDH
tDS
Data Out
Q4
D5
Dont Care
Undefined
WRITE# = L means WE# = L, and BWx# = L
CEx# refers to the combination of CE1#, CE2 and CE2#.
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FIG. 5 TIMING WAVEFORM OF CKE# OPERATION
tCH tCL
Clock
tCES tCEH
tCYC
CKE#
Address
A1
A3
A2
A5
A4
A6
WRITE#
CEx#
ADV
OE#
tCD
tLZC
Data Out
tHZC
Q1
Q3
tDS
Data In
Q4
tDH
D2
NOTES:
Dont Care
Undefined
WRITE# = L means WE# = L, and BWx# = L
CEx# refers to the combination of CE1#, CE2 and CE2#.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Oct, 2002
Rev. 5
10
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED2ZL361MS
White Electronic Designs
FIG. 6 TIMING WAVEFORM OF CE# OPERATION
tCH tCL
Clock
tCSS tCSH
tCYC
CKE#
Address
A1
A2
A3
A4
A5
WRITE#
CEx#
ADV
OE#
tOE
tLZOE
Data Out
tHZC
Q1
tCD
tLZC
Q2
Q4
tDS tDH
Data In
D3
NOTES:
D5
Dont Care
Undefined
WRITE# = L means WE# = L, and BWx# = L
CEx# refers to the combination of CE1#, CE2 and CE2#.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Oct, 2002
Rev. 5
11
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED2ZL361MS
White Electronic Designs
PACKAGE DIMENSION: 119 BUMP PBGA
2.79 (0.110)
MAX
7.62 (0.300)
TYP
17.00 (0.669) TYP
R 1.52 (0.060)
MAX (4x)
A
B
A1
CORNER
C
D
E
F
1.27 (0.050)
TYP
G
H
20.32 (0.800)
TYP
23.00 (0.905)
TYP
J
K
L
M
N
P
R
T
U
0.711 (0.028)
MAX
1.27 (0.050) TYP
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTE: Ball attach pad for above BGA package is 620 microns in diameter. Pad is solder mask defined.
ORDERING INFORMATION
COMMERCIAL TEMP RANGE (0°C TO 70°C)
Part Number
Configuration
WED2ZL361MS26BC
WED2ZL361MS28BC
WED2ZL361MS30BC
WED2ZL361MS35BC
WED2ZL361MS38BC
WED2ZL361MS42BC
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
tCD
(ns)
2.6
2.8
3.0
3.5
3.8
4.2
INDUSTRIAL TEMP RANGE (-40°C TO +85°C)
Clock
(MHz)
250
225
200
166
150
133
Part Number
Configuration
WED2ZL361MS26BI*
WED2ZL361MS28BI
WED2ZL361MS30BI
WED2ZL361MS35BI
WED2ZL361MS38BI
WED2ZL361MS42BI
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
tCD
(ns)
2.6
2.8
3.0
3.5
3.8
4.2
Clock
(MHz)
250
225
200
166
150
133
*Consult factory for availability.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Oct, 2002
Rev. 5
12
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com