Reflective Photosensors (Photo Reflectors) CNZ2153 (ON2153) Reflective Photosensor Features Fast response Small size and light weight Unit : mm 4.0±0.2 0.5 10.6±0.3 9.6±0.3 10.2 min. 6.0±0.2 1.7±0.2 CNZ2153 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. Mark for indicating LED side 7.5±0.2 (3.2) 3.0±0.2 Overview ø2.2±0.2 ø0.45±0.05 ø0.3±0.05 *2-0.9±0.15 (7.2) Applications 2 Optical mark reading Detection of position and edge Detection of coin and bill 3 ; ;; Detection of paper, film and cloth 1 Start, end mark detection of magnetic tape 1 2 3 4 (Note) Pin connection 1. ( ) Dimension is reference 2. * is dimension at the root of leads Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Unit VR 3 V IF 50 mA PD*1 75 mW Collector to emitter voltage VCEO 30 V Output (Photo Emitter to collector voltage transistor) Collector current VECO 5 V IC 20 mA Collector power dissipation PC*2 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Temperature 4 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C. *1 Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals VF IF = 50mA IR VR = 3V Ct VR = 0V, f = 1MHz Output characteristics Collector cutoff current ICEO *2 Transfer characteristics measurement circuit (Ambient light is shut off completely) IC VCC *3 ;;; ;;;; ;; ;; ;; ; IF d = 3 mm RL typ max 1.2 1.5 V 10 µA Unit 0.2 µA 50 pF VCE = 10V Collector current IC*1 VCC = 5V, IF = 20mA, RL = 100Ω Transfer Response time tr*2 , tf*3 VCC = 10V, IC = 0.1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA *1 min µA 100 µs 6 0.5 V Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. 90% 10% Standard white paper (Reflective ratio 90%) tr tf Note) The part number in the parenthesis shows conventional part number. 1 CNZ2153 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — V F VF — Ta 1.6 60 Ta = 25˚C IF 30 IC 20 30 20 20 40 60 80 0 100 0 IC — I F 0.4 0.8 1.2 1.6 0 – 40 – 20 2.4 10 –2 1 IC (%) 1 IF = 30mA 20mA 10 –1 Forward current IF (mA) 10mA ICEO — Ta 1 100 120 80 40 0 – 40 – 20 10 2 10 0 60 80 100 0.32 VCC = 10V Ta = 25˚C IC (mA) 1 10 2 tr (µs) 40 IC — d VCE = 10V RL = 1kΩ 10 Collector current Rise time 20 Ambient temperature Ta (˚C ) tr — IC 10 3 10 10 –2 80 VCC = 5V IF = 20mA RL = 100Ω Collector to emitter voltage VCE (V) 10 –1 60 IC — Ta 10 10 –2 10 –1 10 2 10 40 160 Relative output current 10 –1 20 Ta = 25˚C IC (mA) 1 10 –3 10 –1 0 Ambient temperature Ta (˚C ) IC — VCE Collector current IC (mA) 2.0 10 2 VCC = 5V RL = 100Ω Ta = 25˚C Collector current 0.4 Forward voltage VF (V) 10 ICEO (µA) 10mA 0.8 500Ω 100Ω 1 VCC = 5V Ta = 25˚C RL = 100Ω IF = 20mA 0.24 ; ; 0 Ambient temperature Ta (˚C ) Dark current IF = 50mA 1.2 10 10 0 – 25 40 Forward voltage 40 VF (V) 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 d 0.16 0.06 10 –3 10 –4 – 40 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 10 –1 10 –2 10 –1 1 Collector current IC (mA) 10 0 0 2 4 6 Distance d (mm) 8 Caution for Safety Gallium arsenide material (GaAs) is used in this product. 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