Phototransistors PNZ163NC (PN163-(NC)) Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm For optical control systems Features High sensitivity 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Fast response : tr = 4 µs (typ.) 12 min. Not soldered 2.15 max. Adoption of visible light cutoff resin Ultraminiature, thin side-view type package 2-0.5±0.15 2 2.54 0.3±0.15 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector current IC 20 mA Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle *2 min typ VCE = 10V, H = 15µW/cm2 6 max Unit 0.2 µA 40 µA λP VCE = 10V 850 nm θ Measured from the optical axis to the half power point 25 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 4 µs Fall time tf*2 RL = 100Ω 4 Collector saturation voltage *1 SIR *1 Conditions VCE = 10V VCE(sat) ICE(L) = 3µA, H = 15µW/cm2 µs 0.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ163NC PC — Ta ICE(L) — VCE 30 20 10 0 20 40 60 Ambient temperature 80 2.0 1.5 500 lx 1.0 0.5 0 100 L = 1000 lx Ta (˚C ) 100 lx 0 4 8 1 10 –1 40 Ambient temperature 60 80 50 40 30 20 30˚ S (%) 40 80 80 60 40 0 600 120 50˚ 60˚ VCC = 10V Ta = 25˚C 900 1000 1100 1200 VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 10 500Ω 100Ω 70˚ 80˚ 800 tf — ICE(L) tf (µs) 40˚ 700 Wavelength λ (nm) Ta (˚C ) 10 3 tr (µs) 60 VCE = 10V Ta = 25˚C tr — ICE(L) 20˚ Rise time 70 0 10 4 Relative sensitivity S (%) 90 80 10 3 L (lx) 20 Ambient temperature 100 10 2 10 Illuminance Spectral sensitivity characteristics 1 10 –1 – 40 100 1 100 10 Ta (˚C ) 10˚ 10 –1 VCE (V) VCE = 10V T = 2856K Directivity characteristics 0˚ 1 10 –2 24 Relative sensitivity ICE(L) (mA) Collector photo current ICEO (nA) Dark current 10 20 20 VCE = 10V Ta = 25˚C T = 2856K 10 ICE(L) — Ta 10 2 VCE = 10V 0 16 Collector to emitter voltage ICEO — Ta 10 –2 – 20 12 Fall time 0 – 20 2.5 ICE(L) (mA) 40 Ta = 25˚C T = 2856K Collector photo current ICE(L) (mA) 50 10 2 ICE(L) — L 10 2 3.0 Collector photo current Collector power dissipation PC (mW) 60 10 2 RL = 1kΩ 10 500Ω 100Ω 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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