Darlington Phototransistors PNA2602 (PN205) Darlington Phototransistor Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features 2.8 1.8 1.0 Darlington output, high sensitivity 12.8 min. 10.0 min. Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 1.2 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C 1 2 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) Conditions VCE = 10V, L = 2 lx*1 max Unit 0.1 0.5 µA 1 mA nm Measured from the optical axis to the half power point 35 deg. VCC = 10V, ICE(L) = 5mA, RL = 100Ω 100 µs VCE = 10V θ tr, tf*2 ICE(L) = 1mA, L = 100 0.2 typ 800 λP VCE(sat) min VCE = 10V lx*1 0.7 1.5 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;; ;; 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PNA2602 Darlington Phototransistors PC — Ta ICE(L) — VCE 60 40 20 0 20 40 60 80 L = 30 lx 16 20 lx 10 lx 8 5 lx 0 100 Ta (˚C ) 0 4 8 12 16 20 Collector to emitter voltage 1 10 –1 24 Spectral sensitivity characteristics Ta = 25˚C Dark current S (%) 80 1 60 Relative sensitivity ICEO (µA) 10 10 –1 40 10 –2 0 40 Ambient temperature 80 20 10 –3 – 20 120 Ta (˚C ) 0 10˚ 20 40 60 Ambient temperature 80 0 200 100 400 20˚ 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tr — ICE(L) Directivity characteristics 0˚ 10 3 L (lx) 100 VCE = 10V 10 –1 10 2 10 Illuminance ICEO — Ta 1 1 VCE (V) 10 2 VCE = 10V T = 2856K 10 –2 – 40 10 2 10 2 lx 1 lx ICE(L) — Ta 10 ICE(L) (mA) 80 PC = 100mW 24 Collector photo current ICE(L) (mA) 100 Ambient temperature ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K Ta = 25˚C T = 2856K 0 – 20 Collector photo current ICE(L) — L 10 3 32 Collector photo current Collector power dissipation PC (mW) 120 tf — ICE(L) 100 40 30 20 50˚ 60˚ 70˚ 10 3 Sig. OUT 50Ω Sig. OUT RL tr ; RL = 1kΩ 500Ω 90% 10% td tf 10 3 RL = 1kΩ 500Ω 100Ω 10 2 10 2 100Ω 80˚ 90˚ 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 2 tf VCC tf (µs) 40˚ tr td 90% 10% Fall time 50 ;; ; 60 Sig. OUT RL tr (µs) 70 Sig.IN VCC Sig. OUT 50Ω 30˚ Rise time 80 Relative sensitivity S (%) Sig.IN 90 1 10 ICE(L) (mA) 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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