Phototransistors PNZ154 (PN154) Silicon NPN Phototransistor For optical control systems 4.5±0.3 ø2.2 3.9±0.3 2.4 1.5 Features Not soldered 0.8 max. Unit : mm High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs Small size, thin side-view type package 12.8 min. 2.8 Fast response : tr = 4 µs (typ.) 2.9±0.25 1.2 1.7±0.2 0.9 0.8 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2 2.54±0.2 R0.8 R0.6 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 500 lx*1 1 typ max 0.01 0.2 4 Unit µA mA λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 27 deg. tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω Collector saturation voltage *2 min Peak sensitivity wavelength Response time *1 Conditions VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 4 10 µs 0.2 0.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ154 PC — Ta ICE(L) — VCE 80 60 40 20 0 – 20 0 20 40 Ambient temperature 60 80 L = 2000 lx 1750 lx 1500 lx 12 1250 lx 1000 lx 8 750 lx 500 lx 4 250 lx Ta (˚C ) 100 lx 0 4 8 20 10 1 10 –1 10 –2 10 –3 24 10 3 10 4 L (lx) Spectral sensitivity characteristics 100 VCE = 10V S (%) 10 –1 10 2 10 Illuminance Relative sensitivity 500 lx ICEO (µA) L = 1000 lx 10 1 Dark current VCE = 10V T = 2856K 1 VCE (V) ICEO — Ta 10 ICE(L) (mA) 10 –2 VCE = 10V Ta = 25˚C 80 60 40 20 0 40 Ambient temperature 80 10 –3 – 40 120 Ta (˚C ) 10˚ 50 40 30 20 40˚ 50˚ 60˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) VCC = 10V Ta = 25˚C 10 3 10 2 tr (µs) 60 30˚ Rise time 70 0 200 120 VCC = 10V Ta = 25˚C 10 3 Relative sensitivity S (%) 90 80 tr — ICE(L) 20˚ 100 80 40 Ambient temperature Directivity characteristics 0˚ 0 10 2 RL = 1kΩ tf (µs) 1 – 40 500Ω 10 100Ω 1 Fall time Collector photo current 16 Collector to emitter voltage ICE(L) — Ta 10 2 12 VCE = 10V Ta = 25˚C T = 2856K 10 2 16 0 100 Ta = 25˚C T = 2856K ICE(L) (mA) 100 ICE(L) — L Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 120 RL = 1kΩ 500Ω 10 100Ω 1 70˚ 80˚ 10 –1 10 –1 90˚ 10 –2 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –2 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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