Phototransistors PNA1401L (PN101) Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA (typ.) 2-ø0.45±0.05 Fast response : tr, tf = 3 µs (typ.) 2.54±0.25 0± 1. TO-18 standard type package 1. 3˚ 0± 0. 45± 15 2 0. Absolute Maximum Ratings (Ta = 25˚C) 2 1 Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 30 V Emitter to collector voltage VECO 5 V IC 50 mA Collector current Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) Conditions min VCE = 10V Unit 300 nA 3.5 mA VCE = 10V 800 nm θ Measured from the optical axis to the half power point 10 deg. tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω 3 µs ICE(L) = 1mA, L = 500 1.5 max 5 λP VCE(sat) VCE = 10V, L = 100 lx*1 typ lx*1 0.2 0.4 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PNA1401L Phototransistors PC — Ta 10 2 120 80 40 ICE(L) (mA) 16 400 lx PC = 150mW 300 lx 12 VCE = 10V Ta = 25˚C Ta = 25˚C 500 lx Collector photo current ICE(L) (mA) 160 Collector photo current PC (mW) 1000 lx Collector power dissipation ICE(L) — L ICE(L) — VCE 20 200 200 lx 8 150 lx 100 lx 4 10 1 10 –1 L = 50 lx 0 – 20 0 20 40 60 Ambient temperature 80 0 100 Ta (˚C ) 0 10 VCE = 10V T = 2856K 1 0 40 80 Ambient temperature S (%) 200 lx 100 lx Ta (˚C ) 80 120 VCC = 10V Ta = 25˚C 80 tr (µs) 10 2 60 40 RL = 1kΩ 500Ω 10 100Ω 1 20 0 30 20 10 0 10 Angle θ (deg.) 2 20 30 60 40 10 –1 10 –1 1 Collector photo current 10 0 200 400 600 800 1000 Wavelength λ (nm) Ta (˚C ) 10 3 Rise time S (%) 40 tr — ICE(L) Directivity characteristics Relative sensitivity 0 Ambient temperature 100 80 20 1 – 40 120 10 3 Ta = 25˚C L = 500 lx 10 10 2 L (lx) Spectral sensitivity characteristics Relative sensitivity 10 10 Illuminance 100 ICE(L) (mA) Collector photo current ICEO (nA) Dark current 10 2 1 VCE (V) ICE(L) — Ta 10 2 VCE = 10V 10 –1 – 40 10 –2 30 Collector to emitter voltage ICEO — Ta 10 3 20 10 2 ICE(L) (mA) 1200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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