InGaAs-PIN/Preamp Receiver FRM5J141GW FEATURES • Small Form Factor Package(GW): 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s • High Sensitivity: -19dBm (typ.) • Electrical Differential Output • Wide Bandwidth: 11GHz (typ.) APPLICATIONS This PIN with HBT preamplifier is intended to function as an optical receiver at 1,310nm or 1,530-1,620nm in SONET, SDH, DWDM or other optical fiber systems operating up to 12.5Gb/s. The typical transimpedance (Zt) value of 1,300Ω optimizes the total bandwidth for 10Gb/s application. The detector preamplifier is DC coupled and has an electrical differential output. DESCRIPTION The FRM5J141GW incorporates a high bandwidth InGaAs PIN photo diode, a GaAs HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The PIN is processed with modern MOVPE techniques resulting in a reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding. ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top -5 to +75 °C Supply Voltage Vss -6 to 0 V PIN Reverse Voltage VR 0 to 20 V PIN Reverse Current IR(peak) 4 mA Parameter Edition 1.3 January 2003 1 InGaAs-PIN/Preamp Receiver FRM5J141GW OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, VR=5V, unless otherwise specified) λ = 1,310nm λ = 1,550nm λ = 1,620nm Min. 0.85 0.85 - Limits Typ. 0.95 1.00 0.85 Zt f = 750MHz, Single-end 900 1300 - Ω Output Common Voltage Vout - - -400 - mV Maximum Output Voltage Swing Vclip Saturated Output Voltage 400 600 800 mV Bandwidth BW 9.0 11.0 - GHz - 40 100 kHz 130MHz to BW, Pin=-16dBm - 0.5 1.5 dB 1GHz to 6GHz, Pin=-16dBm - 15 40 Parameter PIN Responsivity AC Transimpedance Symbol Test Conditions R13 R15 R16 Max. - Unit A/W -3dB from 750MHz, Pin=-16dBm Lower Cut-off Frequency Peaking Group Delay Deviation Output Return Loss fcl dpk psp-p GD S22 1GHz to 8GHz, Pin=-16dBm - 30 60 130MHz to 6GHz - 12 - 130MHz to 8GHz - 10 - - -19.0 -17.0 -14.0 -18.0 -18.0 -17.0 dBm -0.5 - 0 1 2 - dBm λ = 1,550nm 27 - - λ = 1,310nm 27 - - Minimum Sensitivity Pr 25°C, Rext=13dB 10Gb/s, NRZ, 31 PRBS=2 -1, 25°C, Rext=8.2dB 25°C, Rext=6.0dB B.E.R.=10-12 70°C, Rext=13dB Maximum Overload Po 10Gb/s, NRZ, Rext=13dB PRBS=231-1, Rext=8.2dB B.E.R.=10-12 Rext=6.0dB Optical Return Loss ORL dB dB Preamp Supply Current Iss - - 110 130 mA Preamp Supply Voltage Vss - -5.46 -5.20 -4.94 V PIN Supply Voltage VR - 4.75 5.0 12 V Note: All the parameters are measured with 50Ω DC-coupled and 0V output offset. 2 InGaAs-PIN/Preamp Receiver FRM5J141GW Notes 3 InGaAs-PIN/Preamp Receiver FRM5J141GW UNIT: mm “GW” PACKAGE 2.6 0.1 2.0 17.0 13.0 9.0 1 Bending Radius 0.3 0.35 0.25 0.6 2 - R1.1 Ø4.1 4.0 (1.0) Ø0.9 8 - P0.8=6.4 2 - 0.2 7 - 0.4 Lead Detail (x10) 9 5.5 0.4 6.7 PIN # Symbol 2.3 2.6 5.0 1400 MIN. 28.0 MAX. 1 VPD 2 3 4 5 6 7 8 9 VPreamp GND OUT GND OUT GND OFFSET NC Function PD BIAS (+) Preamp BIAS CASE GROUND OUTPUT (-) CASE GROUND OUTPUT (+) CASE GROUND DC OFFSET CONTROL NC For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. CAUTION 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com • Do not put this product into the mouth. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200 4