ETC NCS5000/D

NCS5000
Product Preview
Integrated RF Schottky
Detector
The NCS5000 is an integrated schottky detector intended for use as
a level detector in RF measurement/power control applications such as
those found in GSM handsets. The detector converts the peak RF
voltage applied to a DC level. The circuit consists of an RF schottky
detector, a reference schottky diode, as well as biasing and control
circuitry. There is an enable input that allows the part to be placed in a
low power state when not in use.
The detector is designed for operation up to 2.0 GHz and can operate
with input power levels up to +25 dBm. There is a fixed offset of
10 mV (nominal) between the Reference Detector and the RF Detector
under no applied RF. The two detectors are monolithically integrated
so that they closely track over temperature, voltage and process.
The NCS5000 is housed in a very small TSOP–6 package ideal for
portable applications. The TSOP–6 package is a lower profile,
footprint compatible package to the SOT23–6.
Features
Wide Operating Frequency Range to 2.0 GHz
2.7–5.5 V Operating Voltage
Very Low Operating Current of 300 A
Enable Control to Place the Part in a Low Current Standby Mode
Typical Standby Current of < 1.0 A
–40 to 85°C Operating Temperature Range
Very Small TSOP–6 Package
6
1
TSOP–6
SN SUFFIX
CASE 318G
PIN CONNECTIONS AND
MARKING DIAGRAM
DET_OUT
1
VCC
2
Enable
3
BAFyw
•
•
•
•
•
•
•
http://onsemi.com
6
REF
5
GND
4
RF_In
(Top View)
BAF = Specific Device Code
yw = Date Code
Typical Applications
•
•
•
•
Cellular Handsets (GSM and DCS1800/PCS1900)
Wireless Data Modems
Transmitter Power Measurement and Control
Test Equipment
ORDERING INFORMATION
Device
NCS5000SNT1
VCC
Package
Shipping
TSOP–6
3000 Tape & Reel
Compensated
Current Sources
Enable
RF_In
DET_OUT
REF
GND
This circuit has 28 active transistors
Figure 1.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1
Publication Order Number:
NCS5000/D
NCS5000
PIN DESCRIPTION
Pin
Name
Description
1
DET_OUT
2
VCC
3
Enable
Control signal to turn on and off the device. If this signal is not used, this pin should be connected directly
to VCC. A logic low on this input turns on the device.
4
RF_In
This is the input to the RF detector. The signal must be AC–coupled into this input with a good quality RF
capacitor.
5
GND
Ground.
6
REF
This is the reference detector output. Nominal this signal is 10 mV higher than DET_OUT when no RF signal is
applied at RF_In.
This is the RF Detector Output. This signal is proportional to the peak RF voltage applied at the RF_In pin.
Input power supply.
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁ
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.)
Rating
Symbol
Value
Unit
PMAX
28
dBm
VCCMAX
6.0
V
–
500
V
Storage Temperature Range
Tstg
–40 to +125
°C
Maximum Junction Temperature
TJ
+150
°C
Maximum Input Voltage on Pins
VIMAX
VCC + 0.3 V
–
Minimum Input Voltage on Pins
VIMIN
–0.3 V
–
Maximum Input Power on RF Pin
Maximum Power Supply
ESD Rating for RF_In (HBM)
All Other Pins are 2.5 kV (HBM)
RECOMMENDED OPERATING CONDITIONS
Characteristic
Symbol
Min
Typ
Max
Unit
RF Input (50 Equivalent)
RFin
–
–
25
dBm
Supply Voltage
VCC
2.7
–
5.5
V
TA
–40
–
85
°C
Operating Temperature Range
ELECTRICAL CHARACTERISTICS (VCC = 2.8 V, for typical values; TA = 25°C, for min and max values; TA= –40 to 85°C unless
otherwise noted.)
Characteristic
Symbol
Pin
Min
Typ
Max
Unit
–
4
100
–
2000
MHz
Operating Current Consumption
(Venable = 2.4 V, No RF Applied)
Icc(op)
2
–
–
500
A
Standby Current Consumption
(Venable = 0.4 V, No RF Applied)
Icc(stby)
2
–
1
10
A
DET_OUT
1
40
45
50
mV
REF
6
50
55
60
mV
REF–
DET_OUT
1,6
5
10
15
mV
–
–
–
–
–
100
335
1285
–
–
–
RF Operating Frequency
Detector Output (No RF Applied)
Reference Output (No RF Applied)
Reference – Detector Output Differential Voltage
(No RF Applied)
Detector Output
Fin = 1.0 GHz, RFin = –5.0 dBm (50 )
Fin = 1.0 GHz, RFin = 5.0 dBm (50 )
Fin = 1.0 GHz, RFin = 15 dBm (50 )
mV
Enable Logic High
Vih
3
2.4
–
–
Enable Logic Low
Vil
3
0
–
0.4
V
Enable Input Current, VCC = 2.7 V, Venable = 2.4 V
Iin
3
0
–
30
A
http://onsemi.com
2
V
NCS5000
Vbat
Power
Amplifier
Vbat
Coupler
RFout
RFin
APC
Control
Input
20 dB
NCP500
2.8 V LDO
MCU
Port
VCC
Compensated
Current Sources
Enable
RF_In
Ramp
Control
(DAC)
+
–
REF
+
–
DET_OUT
Note: The RF signal must be AC–coupled into the RF_In pin
NCS5000
GND
Figure 2. Typical Application Block Diagram
APPLICATION INFORMATION
device to be placed into a very low power state (3.0 W)
when not in use.
In addition to the RF detector, a reference detector is
included so the NCS5000 can be used to implement a
differential detector. Since the RF and reference detectors
are integrated on the same silicon, they track each other
tightly over temperature, bias voltage, and process. Each
detector is biased with approximately 45 A of current and
there is a built–in offset of 10 mV (nom) between the RF and
the Reference Detector.
The NCS5000 is an integrated RF schottky detector
designed for use in level detector and power amplifier
control circuits. The device is optimized for large signal
applications (Pin –20 dBm) such as those found in GSM
handsets and data modems. This device has been designed
for applications that require operation from a single Li–Ion
or multi– Ni–MH battery pack. The operating range is
2.7–5.5 V so the device can be powered directly from the
battery or a low drop out regulator. To support power
sequencing, an Enable circuitry is included which allows the
http://onsemi.com
3
NCS5000
10000
65
60
VOLTAGE (mV)
VOLTAGE OUT (mV)
1000
DET_OUT
100
REF
55
50
DET_OUT
10
45
DET_OUT – DET_OUT (No Signal)
1
–20
–15
–10
–5
0
5
10
40
–40
15
10
–15
85
60
TEMPERATURE (°C)
INPUT POWER (dBm)
Figure 4. Detector and Reference Output
Variation Over Temperature
(VCC = 2.7 V, No RF Applied)
Figure 3. Detector Performance vs. RF Input Power
(VCC = 2.7 V, Fin = 1.0 GHz, TA = 25C)
20
65
60
15
VOUT (mV)
DIFFERENTIAL VOLTAGE (mV)
35
REF – DET_OUT
10
REF
55
50
DET_OUT
5
45
0
–40
–15
10
35
60
40
2.7
85
3.1
3.5
3.9
4.3
4.7
5.1
TEMPERATURE (°C)
VCC VOLTAGE (V)
Figure 5. Offset Between RF Detector and
Reference Detector Output Voltage Over
Temperature (VCC = 2.7 V, No RF Applied)
Figure 6. Detector and Reference Output
Variation Over VCC Bias
(TA = 25C, No RF Applied)
2500
5.5
500
400
350
1500
ICC (µA)
Ienable + ICC CURRENT (µA)
450
2000
1000
300
250
200
150
VCC = 5.5 V
500
100
50
VCC = 2.7 V
0
–30 –25 –20 –15 –10
–5
0
5
10
15
0
–40
20
–15
10
35
60
INPUT POWER (dBm)
TEMPERATURE (°C)
Figure 7. Current Consumption vs. Input Power
TA = 25C, Fin = 100 MHz
Figure 8. ICC Variation Over Temperature
VCC = 5.5 V, No RF Applied
http://onsemi.com
4
85
NCS5000
INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
TSOP–6
TSOP–6 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the TSOP–6 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the TSOP–6 package, PD can be calculated as
follows:
PD =
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 400 milliwatts.
PD = 150°C – 25°C = 417 milliwatts
300°C/W
The 300°C/W for the TSOP–6 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 417
milliwatts.
*Soldering a device without preheating can cause excessive thermal
shock and stress which can result in damage to the device.
http://onsemi.com
5
NCS5000
PACKAGE DIMENSIONS
TSOP–6
SN SUFFIX
CASE 318G–02
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
S
1
5
4
2
3
B
D
G
M
J
C
0.05 (0.002)
H
K
http://onsemi.com
6
DIM
A
B
C
D
G
H
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0
10 2.50
3.00
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0
10 0.0985 0.1181
NCS5000
Notes
http://onsemi.com
7
NCS5000
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
NCS5000/D