NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature TSOP6 Surface Mount Package http://onsemi.com 2 AMPERES 20 VOLTS RDS(on) = 65 m Applications • Power Management in Portable and Battery–Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) P–Channel Symbol Value Unit –20 Volts Gate–to–Source Voltage – Continuous VDSS VGS 12 Volts Thermal Resistance Junction–to–Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (Tp 10 µS) RθJA Pd ID IDM 244 0.5 –2.2 –10 °C/W Watts Amps Amps RθJA Pd ID IDM 128 1.0 –3.1 –14 °C/W Watts Amps Amps RθJA Pd ID IDM TJ, Tstg 62.5 2.0 –4.4 –20 °C/W Watts Amps Amps –55 to 150 °C 260 °C Rating Drain–to–Source Voltage Thermal Resistance Junction–to–Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (Tp 10 µS) Thermal Resistance Junction–to–Ambient (Note 3.) Total Power Dissipation @ TA = 25°C Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (Tp 10 µS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 1 2 5 6 3 4 MARKING DIAGRAM 3 4 5 2 1 443 W TSOP–6 CASE 318G STYLE 1 6 W 1. Minimum FR–4 or G–10PCB, operating to steady state. 2. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), t 5.0 seconds. = Work Week PIN ASSIGNMENT Drain Drain Source 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3443T1 Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 1 1 Package Shipping TSOP–6 3000 Tape & Reel Publication Order Number: NTGS3443T1/D NTGS3443T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)* Characteristic Symbol Min Typ Max Unit –20 – – – – – – –1.0 –5.0 – – –100 – – 100 –0.60 –0.95 –1.50 – – – 0.058 0.082 0.092 0.065 0.090 0.100 – 8.8 – Ciss – 565 – pF Coss – 320 – pF Crss – 120 – pF td(on) – 10 25 ns tr – 18 45 ns td(off) – 30 50 ns tf – 31 50 ns Qtot – 7.5 15 nC Qgs – 1.4 – nC Qgd – 2.9 – nC VSD – –0.83 –1.2 Vdc trr – 30 – ns OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = –10 µA) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = –20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = –20 Vdc, TJ = 70°C) IDSS Gate–Body Leakage Current (VGS = –12 Vdc, VDS = 0 Vdc) IGSS Gate–Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) IGSS Vdc µAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = –250 µAdc) VGS(th) Static Drain–Source On–State Resistance (VGS = –4.5 Vdc, ID = –4.4 Adc) (VGS = –2.7 Vdc, ID = –3.7 Adc) (VGS = –2.5 Vdc, ID = –3.5 Adc) RDS(on) Forward Transconductance (VDS = –10 Vdc, ID = –4.4 Adc) Vdc gFS mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = –5.0 5 0 Vdc, Vd VGS = 0 Vdc, Vd f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = –20 20 Vdc, ID = –1.0 1.0 Adc, VGS = –4.5 Vdc, Rg = 6.0 ) Fall Time Total Gate Charge Gate–Source Charge (VDS = –10 10 Vdc, Vd VGS = –4.5 4 5 Vdc, Vd ID = –4.4 Adc) Gate–Drain Charge BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = –1.7 Adc, VGS = 0 Vdc) Reverse Recovery Time (IS = –1.7 Adc, dIS/dt = 100 A/µs) *Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%. *Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 8 8 VGS = –2.5 V –ID, DRAIN CURRENT (AMPS) –ID, DRAIN CURRENT (AMPS) VGS = –5 V TJ = 25°C VGS = –3 V VGS = –4.5 V VGS = –4 V VGS = –3.5 V VGS = –2 V 6 4 2 VGS = –1.5 V 0 0.8 0.4 1.2 1.6 4 TJ = 25°C 2 TJ = 125°C 1.4 1.8 2.2 Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) Figure 1. On–Region Characteristics ID = –4.4 A TJ = 25°C 0.3 0.25 0.2 0.15 0.1 0.05 2.5 2 3 3.5 4 4.5 5 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 3 0.16 TJ = 25°C 0.14 VGS = –2.5 V 0.12 VGS = –2.7 V 0.1 0.08 VGS = –4.5 V 0.06 0.04 0 1 2 3 4 5 6 7 8 –ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance vs. Gate–to–Source Voltage Figure 4. On–Resistance vs. Drain Current and Gate Voltage 100 1.5 TJ = 125°C ID = –4.4 A VGS = –4.5 V 1.3 1.2 1.1 1 0.9 TJ = 100°C 10 1 TJ = 25°C 0.1 0.8 0.7 –50 2.6 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 0.35 1.4 1 TJ = –55°C –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.4 0 1.5 6 0 0.6 2 –IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) 0 VDS≥ = –10 V VGS = 0 V 0.01 –25 0 25 50 75 100 125 150 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 5 1200 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1000 C, CAPACITANCE (pF) QT TJ = 25°C VGS = 0 V 800 600 Ciss 400 Coss 200 VGS 4 3 Q1 Q2 2 1 TJ = 25°C ID = –4.4 A Crss 0 2 4 6 8 10 12 14 16 18 0 20 0 1 2 3 4 5 6 7 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate–to–Source and Drain–to–Source Voltage vs. Total Charge 1.3 ID = –250 µA 1.2 1.1 1 0.9 0.8 0.7 0.6 –50 8 4 –IS, SOURCE CURRENT (AMPS) VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 0 –25 0 25 50 75 100 125 150 VGS = 0 V 3 TJ = 150°C 2 TJ = 25°C 1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ, JUNCTION TEMPERATURE (°C) –VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 20 POWER (W) 16 12 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 11. Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E–04 Single Pulse 1E–03 1E–02 1E–01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction–to–Ambient http://onsemi.com 5 1E+03 NTGS3443T1 INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm SOLDERING PRECAUTIONS • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 6 NTGS3443T1 PACKAGE DIMENSIONS TSOP–6 CASE 318G–02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 STYLE 1: PIN 1. 2. 3. 4. 5. 6. http://onsemi.com 7 DRAIN DRAIN GATE SOURCE DRAIN DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NTGS3443T1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTGS3443T1/D