NCS5000 Integrated RF Schottky Detector The NCS5000 is an integrated schottky detector intended for use as a level detector in RF measurement/power control applications such as those found in GSM handsets. The detector converts the peak RF voltage applied to a DC level. The circuit consists of an RF schottky detector, a reference schottky diode, as well as biasing and control circuitry. There is an enable input that allows the part to be placed in a low power state when not in use. The detector is designed for operation up to 2.0 GHz and can operate with input power levels up to +25 dBm. There is a fixed offset of 10 mV (nominal) between the Reference Detector and the RF Detector under no applied RF. The two detectors are monolithically integrated so that they closely track over temperature, voltage and process. The NCS5000 is housed in a very small TSOP–6 package ideal for portable applications. The TSOP–6 package is a lower profile, footprint compatible package to the SOT23–6. http://onsemi.com 6 1 TSOP–6 SN SUFFIX CASE 318G PIN CONNECTIONS AND MARKING DIAGRAM Features Wide Operating Frequency Range to 2.0 GHz 2.7–5.5 V Operating Voltage Very Low Operating Current of 300 A Enable Control to Place the Part in a Low Current Standby Mode Typical Standby Current of < 1.0 A –40 to 85°C Operating Temperature Range Very Small TSOP–6 Package DET_OUT 1 VCC 2 Enable 3 6 REF 5 GND 4 RF_In (Top View) BAF = Specific Device Code yw = Date Code Typical Applications • • • • BAFyw • • • • • • • Cellular Handsets (GSM and DCS1800/PCS1900) Wireless Data Modems Transmitter Power Measurement and Control Test Equipment ORDERING INFORMATION Device NCS5000SNT1 Package Shipping TSOP–6 3000/Tape & Reel VCC Compensated Current Sources Enable RF_In DET_OUT REF GND This circuit has 28 active transistors Figure 1. Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 2 1 Publication Order Number: NCS5000/D NCS5000 PIN DESCRIPTION Pin Name Description 1 DET_OUT 2 VCC 3 Enable Control signal to turn on and off the device. If this signal is not used, this pin should be connected directly to VCC. A logic high on this input turns on the device. 4 RF_In This is the input to the RF detector. The signal must be AC–coupled into this input with a good quality RF capacitor. 5 GND Ground. 6 REF This is the reference detector output. Nominal this signal is 10 mV higher than DET_OUT when no RF signal is applied at RF_In. This is the RF Detector Output. This signal is proportional to the peak RF voltage applied at the RF_In pin. Input power supply. MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁ Rating Symbol Value Unit PMAX 28 dBm VCCMAX 6.0 V – 500 V Storage Temperature Range Tstg –40 to +125 °C Maximum Junction Temperature TJ +150 °C Maximum Input Voltage on Pins VIMAX VCC + 0.3 V – Minimum Input Voltage on Pins VIMIN –0.3 V – Maximum Input Power on RF Pin Maximum Power Supply ESD Rating for RF_In (HBM) All Other Pins are 2.5 kV (HBM) RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit RF Input (50 Equivalent) RFin – – 25 dBm Supply Voltage VCC 2.7 – 5.5 V TA –40 – 85 °C Operating Temperature Range ELECTRICAL CHARACTERISTICS (VCC = 2.8 V, for typical values; TA = 25°C, for min and max values; TA= –40 to 85°C unless otherwise noted.) Symbol Pin Min Typ Max Unit – 4 100 – 2000 MHz Operating Current Consumption (Venable = 2.4 V, No RF Applied) Icc(op) 2 – – 500 A Standby Current Consumption (Venable = 0.4 V, No RF Applied) Icc(stby) 2 – 1 10 A RR 2 – – 56 41 – – Characteristic RF Operating Frequency Power Supply Ripple Rejection (VCC = 3.6 V, Vripple = 0.5 VPP, No RF) 1 kHz 10 kHz Detector Output (No RF Applied) Reference Output (No RF Applied) Reference – Detector Output Differential Voltage (No RF Applied) Detector Output Fin = 1.0 GHz, RFin = –5.0 dBm (50 ) Fin = 1.0 GHz, RFin = 5.0 dBm (50 ) Fin = 1.0 GHz, RFin = 15 dBm (50 ) dB DET_OUT 1 40 45 50 mV REF 6 50 55 60 mV REF– DET_OUT 1,6 5 10 15 mV – – – – – 100 335 1285 – – – mV Enable Logic High Vih 3 2.4 – – V Enable Logic Low Vil 3 0 – 0.4 V Enable Input Current, VCC = 2.7 V, Venable = 2.4 V Iin 3 0 – 30 A http://onsemi.com 2 NCS5000 Vbat Power Amplifier Vbat Coupler RFout RFin APC Control Input 20 dB NCP500 2.8 V LDO MCU Port VCC Compensated Current Sources Enable RF_In Ramp Control (DAC) + – REF + – DET_OUT Note: The RF signal must be AC–coupled into the RF_In pin NCS5000 GND Figure 2. Typical Application Block Diagram APPLICATION INFORMATION device to be placed into a very low power state (3.0 W) when not in use. In addition to the RF detector, a reference detector is included so the NCS5000 can be used to implement a differential detector. Since the RF and reference detectors are integrated on the same silicon, they track each other tightly over temperature, bias voltage, and process. Each detector is biased with approximately 45 A of current and there is a built–in offset of 10 mV (nom) between the RF and the Reference Detector. The NCS5000 is an integrated RF schottky detector designed for use in level detector and power amplifier control circuits. The device is optimized for large signal applications (Pin –20 dBm) such as those found in GSM handsets and data modems. This device has been designed for applications that require operation from a single Li–Ion or multi– Ni–MH battery pack. The operating range is 2.7–5.5 V so the device can be powered directly from the battery or a low drop out regulator. To support power sequencing, an Enable circuitry is included which allows the http://onsemi.com 3 NCS5000 1000 60 100 VOLTAGE (mV) 65 VDET – VDET(NO RF) (mV) 10000 GSM (897.5 MHz) 10 DCS (1747.5 MHz) 1 GHz 1 REF 55 50 DET_OUT 45 2 GHz 0.1 –25 –20 –15 –10 –5 0 5 10 15 20 25 40 –40 30 10 –15 85 60 TEMPERATURE (°C) INPUT POWER (dBm) Figure 4. Detector and Reference Output Variation Over Temperature (VCC = 2.7 V, No RF Applied) Figure 3. Detector Output Voltage vs. RF Input Power (VCC = 2.7 V) 20 65 60 15 VOUT (mV) DIFFERENTIAL VOLTAGE (mV) 35 REF – DET_OUT 10 REF 55 50 DET_OUT 5 45 0 –40 –15 10 35 60 40 2.7 85 3.1 3.5 3.9 4.3 4.7 5.1 TEMPERATURE (°C) VCC VOLTAGE (V) Figure 5. Offset Between RF Detector and Reference Detector Output Voltage Over Temperature (VCC = 2.7 V, No RF Applied) Figure 6. Detector and Reference Output Variation Over VCC Bias (TA = 25C, No RF Applied) 2500 5.5 500 400 350 1500 ICC (µA) Ienable + ICC CURRENT (µA) 450 2000 1000 300 250 200 150 VCC = 5.5 V 500 100 50 VCC = 2.7 V 0 –30 –25 –20 –15 –10 –5 0 5 10 15 0 –40 20 –15 10 35 60 INPUT POWER (dBm) TEMPERATURE (°C) Figure 7. Current Consumption vs. Input Power TA = 25C, Fin = 100 MHz Figure 8. ICC Variation Over Temperature VCC = 5.5 V, No RF Applied http://onsemi.com 4 85 NCS5000 INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm TSOP–6 TSOP–6 POWER DISSIPATION The power dissipation of the TSOP–6 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the TSOP–6 package, PD can be calculated as follows: PD = The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 400 milliwatts. PD = 150°C – 25°C = 417 milliwatts 300°C/W The 300°C/W for the TSOP–6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 417 milliwatts. TJ(max) – TA RθJA SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. *Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 NCS5000 PACKAGE DIMENSIONS TSOP–6 SN SUFFIX CASE 318G–02 ISSUE H A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B D G M J C 0.05 (0.002) H K http://onsemi.com 6 DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NCS5000 Notes http://onsemi.com 7 NCS5000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 NCS5000/D