HAT3004R Silicon N and P Channel Power MOS FET Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 Low on–resistance Capable of 4V gate drive Low drive current High density mounting 7 8 5 6 D2 D1 4 G2 2 G1 Ordering Information ———————————————————— Hitachi Code FP–8DA ———————————————————— EIAJ Code 4 S1 1 S2 3 Nch Pch 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ———————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 3.5 –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 2.0 W ——————————————————————————————————————————— Channel dissipation Pch** 1.3 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation : *** 2 Drive operation When using surface mounted on FR4 board HAT3004R (N channel) Table 2 Electrical Characteristics N Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — (0.08) 0.1 Ω ID = 2A VGS = 10V * ———————————————————————— — (0.11) 0.15 Ω ID = 2A VGS = 4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (2.0) (3.0) — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (180) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (110) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (45) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — (60) — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — (25) — ns ———————————————————————————————— Fall time tf — (20) — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — (0.8) — V IF = 3.5A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — (50) — ns IF = 3.5A, VGS = 0 diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test HAT3004R (P channel) Table 2 Electrical Characteristics P Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — (0.13) 0.25 Ω ID = –1 A VGS = –10 V * ———————————————————————— — (0.2) 0.4 Ω ID = –1 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (2.0) (3.0) — S ID = –1 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (250) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (150) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (60) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns VGS = –4 V, ID = –1 A ———————————————————————————————— Rise time tr — (60) — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — (20) — ns ———————————————————————————————— Fall time tf — (25) — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — (–0.8) — V IF = –2.5A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — (50) — ns IF = –2.5A, VGS = 0 diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test HAT3004R Power vs. Temperature Derating Channel Dissipation Pch* (W) 2.0 *** 1.5 ** 1.0 0.5 0 50 100 150 Ambient Temperature 200 Ta (°C) * When using surface mounted on FR4 board ** 1 Drive Operation *** 2 Drive Operation Package Dimensions Unit : mm • SOP–8 1 4 0.75 Max 6.3 Max 0.05 0.20 +– 0.02 5 1.75 Max 8 4.05 Max 5.2 Max 0 – 10 ° 0.40 + 0.10 – 0.05 0.10 ± 0.10 1.27 0.25 0.60 +– 0.18 0.1 0.12 M Hitachi Code FP–8DA — EIAJ MS-012AA JEDEC