2SK1950 Silicon N Channel MOS FET Application DPAK–1 High speed power switching 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC converter 4 3 2, 4 12 1 3 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK1950 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.2 0.25 Ω ID = 2 A VGS = 10 V * ———————————————————————— — 0.3 0.45 Ω ID = 0.6 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (6) (10) — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (350) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (200) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (80) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns ID = 2 A ———————————————————————————————— Rise time tr — (50) — ns ———————————————————————————————— Turn–off delay time td(off) — (100) — ns VGS = 10 V RL = 15 Ω ———————————————————————————————— Fall time tf — (60) — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — (1.2) — V IF = 3 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — (100) — ns IF = 3 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2SK1950